Zhixiang Huang, Weipeng Wu, Eric Herrmann, Ke Ma, Zizwe A Chase, Thomas A Searles, M Benjamin Jungfleisch, Xi Wang
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In this paper, we propose and realize a THz metamaterial comprised of microelectromechanical systems (MEMS) actuated by the phase-transition material vanadium dioxide (VO<sub>2</sub>). Simulation and experimental results of the three-dimensional metamaterials show that by leveraging the unique phase-transition attributes of VO<sub>2</sub>, our THz polarization modulator offers notable advancements over existing designs, including broad operation spectrum, high modulation depth, ease of fabrication, ease of operation condition, and continuous modulation capabilities. These enhanced features make the system a viable candidate for a range of THz applications, including telecommunications, imaging, and radar systems.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11128424/pdf/","citationCount":"0","resultStr":"{\"title\":\"MEMS-actuated terahertz metamaterials driven by phase-transition materials.\",\"authors\":\"Zhixiang Huang, Weipeng Wu, Eric Herrmann, Ke Ma, Zizwe A Chase, Thomas A Searles, M Benjamin Jungfleisch, Xi Wang\",\"doi\":\"10.1007/s12200-024-00116-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>The non-ionizing and penetrative characteristics of terahertz (THz) radiation have recently led to its adoption across a variety of applications. To effectively utilize THz radiation, modulators with precise control are imperative. While most recent THz modulators manipulate the amplitude, frequency, or phase of incident THz radiation, considerably less progress has been made toward THz polarization modulation. Conventional methods for polarization control suffer from high driving voltages, restricted modulation depth, and narrow band capabilities, which hinder device performance and broader applications. Consequently, an ideal THz modulator that offers high modulation depth along with ease of processing and operation is required. In this paper, we propose and realize a THz metamaterial comprised of microelectromechanical systems (MEMS) actuated by the phase-transition material vanadium dioxide (VO<sub>2</sub>). Simulation and experimental results of the three-dimensional metamaterials show that by leveraging the unique phase-transition attributes of VO<sub>2</sub>, our THz polarization modulator offers notable advancements over existing designs, including broad operation spectrum, high modulation depth, ease of fabrication, ease of operation condition, and continuous modulation capabilities. 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MEMS-actuated terahertz metamaterials driven by phase-transition materials.
The non-ionizing and penetrative characteristics of terahertz (THz) radiation have recently led to its adoption across a variety of applications. To effectively utilize THz radiation, modulators with precise control are imperative. While most recent THz modulators manipulate the amplitude, frequency, or phase of incident THz radiation, considerably less progress has been made toward THz polarization modulation. Conventional methods for polarization control suffer from high driving voltages, restricted modulation depth, and narrow band capabilities, which hinder device performance and broader applications. Consequently, an ideal THz modulator that offers high modulation depth along with ease of processing and operation is required. In this paper, we propose and realize a THz metamaterial comprised of microelectromechanical systems (MEMS) actuated by the phase-transition material vanadium dioxide (VO2). Simulation and experimental results of the three-dimensional metamaterials show that by leveraging the unique phase-transition attributes of VO2, our THz polarization modulator offers notable advancements over existing designs, including broad operation spectrum, high modulation depth, ease of fabrication, ease of operation condition, and continuous modulation capabilities. These enhanced features make the system a viable candidate for a range of THz applications, including telecommunications, imaging, and radar systems.
期刊介绍:
Frontiers of Optoelectronics seeks to provide a multidisciplinary forum for a broad mix of peer-reviewed academic papers in order to promote rapid communication and exchange between researchers in China and abroad. It introduces and reflects significant achievements being made in the field of photonics or optoelectronics. The topics include, but are not limited to, semiconductor optoelectronics, nano-photonics, information photonics, energy photonics, ultrafast photonics, biomedical photonics, nonlinear photonics, fiber optics, laser and terahertz technology and intelligent photonics. The journal publishes reviews, research articles, letters, comments, special issues and so on.
Frontiers of Optoelectronics especially encourages papers from new emerging and multidisciplinary areas, papers reflecting the international trends of research and development, and on special topics reporting progress made in the field of optoelectronics. All published papers will reflect the original thoughts of researchers and practitioners on basic theories, design and new technology in optoelectronics.
Frontiers of Optoelectronics is strictly peer-reviewed and only accepts original submissions in English. It is a fully OA journal and the APCs are covered by Higher Education Press and Huazhong University of Science and Technology.
● Presents the latest developments in optoelectronics and optics
● Emphasizes the latest developments of new optoelectronic materials, devices, systems and applications
● Covers industrial photonics, information photonics, biomedical photonics, energy photonics, laser and terahertz technology, and more