由相变材料驱动的 MEMS 驱动太赫兹超材料。

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Frontiers of Optoelectronics Pub Date : 2024-05-27 DOI:10.1007/s12200-024-00116-4
Zhixiang Huang, Weipeng Wu, Eric Herrmann, Ke Ma, Zizwe A Chase, Thomas A Searles, M Benjamin Jungfleisch, Xi Wang
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引用次数: 0

摘要

太赫兹(THz)辐射具有非电离和穿透性强的特点,最近已被广泛应用于各种领域。要有效利用太赫兹辐射,必须使用具有精确控制能力的调制器。虽然最近大多数太赫兹调制器都能操纵入射太赫兹辐射的振幅、频率或相位,但在太赫兹偏振调制方面取得的进展要小得多。传统的偏振控制方法存在驱动电压高、调制深度受限和频带窄等问题,这阻碍了设备的性能和更广泛的应用。因此,我们需要一种理想的太赫兹调制器,既能提供高调制深度,又能简化处理和操作。在本文中,我们提出并实现了一种由相变材料二氧化钒(VO2)驱动的微机电系统(MEMS)组成的太赫兹超材料。三维超材料的仿真和实验结果表明,通过利用二氧化钒独特的相变属性,我们的太赫兹偏振调制器与现有设计相比具有显著的进步,包括宽工作频谱、高调制深度、易于制造、易于操作条件和连续调制能力。这些增强功能使该系统成为电信、成像和雷达系统等一系列太赫兹应用的可行候选方案。
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MEMS-actuated terahertz metamaterials driven by phase-transition materials.

The non-ionizing and penetrative characteristics of terahertz (THz) radiation have recently led to its adoption across a variety of applications. To effectively utilize THz radiation, modulators with precise control are imperative. While most recent THz modulators manipulate the amplitude, frequency, or phase of incident THz radiation, considerably less progress has been made toward THz polarization modulation. Conventional methods for polarization control suffer from high driving voltages, restricted modulation depth, and narrow band capabilities, which hinder device performance and broader applications. Consequently, an ideal THz modulator that offers high modulation depth along with ease of processing and operation is required. In this paper, we propose and realize a THz metamaterial comprised of microelectromechanical systems (MEMS) actuated by the phase-transition material vanadium dioxide (VO2). Simulation and experimental results of the three-dimensional metamaterials show that by leveraging the unique phase-transition attributes of VO2, our THz polarization modulator offers notable advancements over existing designs, including broad operation spectrum, high modulation depth, ease of fabrication, ease of operation condition, and continuous modulation capabilities. These enhanced features make the system a viable candidate for a range of THz applications, including telecommunications, imaging, and radar systems.

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来源期刊
Frontiers of Optoelectronics
Frontiers of Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
7.80
自引率
0.00%
发文量
583
期刊介绍: Frontiers of Optoelectronics seeks to provide a multidisciplinary forum for a broad mix of peer-reviewed academic papers in order to promote rapid communication and exchange between researchers in China and abroad. It introduces and reflects significant achievements being made in the field of photonics or optoelectronics. The topics include, but are not limited to, semiconductor optoelectronics, nano-photonics, information photonics, energy photonics, ultrafast photonics, biomedical photonics, nonlinear photonics, fiber optics, laser and terahertz technology and intelligent photonics. The journal publishes reviews, research articles, letters, comments, special issues and so on. Frontiers of Optoelectronics especially encourages papers from new emerging and multidisciplinary areas, papers reflecting the international trends of research and development, and on special topics reporting progress made in the field of optoelectronics. All published papers will reflect the original thoughts of researchers and practitioners on basic theories, design and new technology in optoelectronics. Frontiers of Optoelectronics is strictly peer-reviewed and only accepts original submissions in English. It is a fully OA journal and the APCs are covered by Higher Education Press and Huazhong University of Science and Technology. ● Presents the latest developments in optoelectronics and optics ● Emphasizes the latest developments of new optoelectronic materials, devices, systems and applications ● Covers industrial photonics, information photonics, biomedical photonics, energy photonics, laser and terahertz technology, and more
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