{"title":"用于神经形态计算的具有增强突触功能的 TaOx/TiOy 双层膜晶体管","authors":"Mingmin Zhu, Zhendi Yu, Gao Hu, Kai Yu, Yulong Jiang, Jiawei Wang, Wenjing Dong, Jinming Guo, Yang Qiu, Guoliang Yu, Hao-Miao Zhou","doi":"10.1002/aelm.202400008","DOIUrl":null,"url":null,"abstract":"Memristors are a candidate device for artificial neural systems due to their excellent conductance-regulation ability and potential to simulate the characteristics of biological synapses. This study fabricated a Pt/TaO<sub>x</sub>/TiO<sub>y</sub>/Ti analog artificial synapse memristor that exhibits excellent multilevel storage property with a large on/off ratio of ≈660 times. The dynamic resistive switching mechanism is well expounded and validated by the reset stopping voltage dependent Schottky fitting results. Moreover, the essential biological synaptic characteristics such as long-term potentiation/depression (LTP/D) and paired-pulse facilitation (PPF) are successfully mimicked with a low pulse energy consumption of 12.69 nJ. A neuromorphic network constructed on the enhanced symmetry and linearity of conductance for this Pt/TaO<sub>x</sub>/TiO<sub>y</sub>/Ti memristive device can achieve 92.45% accuracy in recognizing handwritten pattern. These results demonstrate a significant potential for application Pt/TaO<sub>x</sub>/TiO<sub>y</sub>/Ti memristor in non-volatile memory and bioinspired neuromorphic systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":5.3000,"publicationDate":"2024-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing\",\"authors\":\"Mingmin Zhu, Zhendi Yu, Gao Hu, Kai Yu, Yulong Jiang, Jiawei Wang, Wenjing Dong, Jinming Guo, Yang Qiu, Guoliang Yu, Hao-Miao Zhou\",\"doi\":\"10.1002/aelm.202400008\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Memristors are a candidate device for artificial neural systems due to their excellent conductance-regulation ability and potential to simulate the characteristics of biological synapses. This study fabricated a Pt/TaO<sub>x</sub>/TiO<sub>y</sub>/Ti analog artificial synapse memristor that exhibits excellent multilevel storage property with a large on/off ratio of ≈660 times. The dynamic resistive switching mechanism is well expounded and validated by the reset stopping voltage dependent Schottky fitting results. Moreover, the essential biological synaptic characteristics such as long-term potentiation/depression (LTP/D) and paired-pulse facilitation (PPF) are successfully mimicked with a low pulse energy consumption of 12.69 nJ. A neuromorphic network constructed on the enhanced symmetry and linearity of conductance for this Pt/TaO<sub>x</sub>/TiO<sub>y</sub>/Ti memristive device can achieve 92.45% accuracy in recognizing handwritten pattern. These results demonstrate a significant potential for application Pt/TaO<sub>x</sub>/TiO<sub>y</sub>/Ti memristor in non-volatile memory and bioinspired neuromorphic systems.\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2024-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/aelm.202400008\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400008","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing
Memristors are a candidate device for artificial neural systems due to their excellent conductance-regulation ability and potential to simulate the characteristics of biological synapses. This study fabricated a Pt/TaOx/TiOy/Ti analog artificial synapse memristor that exhibits excellent multilevel storage property with a large on/off ratio of ≈660 times. The dynamic resistive switching mechanism is well expounded and validated by the reset stopping voltage dependent Schottky fitting results. Moreover, the essential biological synaptic characteristics such as long-term potentiation/depression (LTP/D) and paired-pulse facilitation (PPF) are successfully mimicked with a low pulse energy consumption of 12.69 nJ. A neuromorphic network constructed on the enhanced symmetry and linearity of conductance for this Pt/TaOx/TiOy/Ti memristive device can achieve 92.45% accuracy in recognizing handwritten pattern. These results demonstrate a significant potential for application Pt/TaOx/TiOy/Ti memristor in non-volatile memory and bioinspired neuromorphic systems.
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Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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