{"title":"预测 Sb2Se3 锑太阳能电池光电效率的衰减和恢复趋势","authors":"Ming-Lang Tseng;Nima E. Gorji","doi":"10.1109/TDMR.2024.3405659","DOIUrl":null,"url":null,"abstract":"This study aims to develop empirical models and equations to predict the lifetime degradation and recovery in the energy conversion efficiency emerging Sb2Se3 based antimony solar cells which have been stressed under ambient moisture, sunlight irradiation intensities and temperature conditions. The models are extracted from empirical data reported in literature and is comprised from critical parameters which can fit with the data to elucidate on the stability behavior of antimony chalcogenide solar cells. Several models have been introduced for variation of solar cell efficiency under different irradiation from 1–10 suns and temperature conditions at 30° C, 40° C, and 50° C. The model predicts a saturation trend in degradation of solar cell efficiency which has been also modelled and formulated through empirical formulas. The efficiency degradation trends follow exponentially decreasing trends while the recovery trends show exponentially increasing trend. In contrast, the saturation efficiency follows linear models for prolonged irradiation and temperature stressing conditions. This examination of saturation in degradation and its dependence on environmental factors provides valuable insights into predicting the worst efficiency affected by seasonal changes over extended periods for antimony photovoltaics.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 4","pages":"656-662"},"PeriodicalIF":2.5000,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Predicting the Degradation and Recovery Trends of the Photovoltaic Efficiency of Sb₂Se₃ Antimony Solar Cells\",\"authors\":\"Ming-Lang Tseng;Nima E. Gorji\",\"doi\":\"10.1109/TDMR.2024.3405659\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study aims to develop empirical models and equations to predict the lifetime degradation and recovery in the energy conversion efficiency emerging Sb2Se3 based antimony solar cells which have been stressed under ambient moisture, sunlight irradiation intensities and temperature conditions. The models are extracted from empirical data reported in literature and is comprised from critical parameters which can fit with the data to elucidate on the stability behavior of antimony chalcogenide solar cells. Several models have been introduced for variation of solar cell efficiency under different irradiation from 1–10 suns and temperature conditions at 30° C, 40° C, and 50° C. The model predicts a saturation trend in degradation of solar cell efficiency which has been also modelled and formulated through empirical formulas. The efficiency degradation trends follow exponentially decreasing trends while the recovery trends show exponentially increasing trend. In contrast, the saturation efficiency follows linear models for prolonged irradiation and temperature stressing conditions. This examination of saturation in degradation and its dependence on environmental factors provides valuable insights into predicting the worst efficiency affected by seasonal changes over extended periods for antimony photovoltaics.\",\"PeriodicalId\":448,\"journal\":{\"name\":\"IEEE Transactions on Device and Materials Reliability\",\"volume\":\"24 4\",\"pages\":\"656-662\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2024-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Device and Materials Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10539320/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10539320/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Predicting the Degradation and Recovery Trends of the Photovoltaic Efficiency of Sb₂Se₃ Antimony Solar Cells
This study aims to develop empirical models and equations to predict the lifetime degradation and recovery in the energy conversion efficiency emerging Sb2Se3 based antimony solar cells which have been stressed under ambient moisture, sunlight irradiation intensities and temperature conditions. The models are extracted from empirical data reported in literature and is comprised from critical parameters which can fit with the data to elucidate on the stability behavior of antimony chalcogenide solar cells. Several models have been introduced for variation of solar cell efficiency under different irradiation from 1–10 suns and temperature conditions at 30° C, 40° C, and 50° C. The model predicts a saturation trend in degradation of solar cell efficiency which has been also modelled and formulated through empirical formulas. The efficiency degradation trends follow exponentially decreasing trends while the recovery trends show exponentially increasing trend. In contrast, the saturation efficiency follows linear models for prolonged irradiation and temperature stressing conditions. This examination of saturation in degradation and its dependence on environmental factors provides valuable insights into predicting the worst efficiency affected by seasonal changes over extended periods for antimony photovoltaics.
期刊介绍:
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.