预测 Sb2Se3 锑太阳能电池光电效率的衰减和恢复趋势

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Device and Materials Reliability Pub Date : 2024-03-27 DOI:10.1109/TDMR.2024.3405659
Ming-Lang Tseng;Nima E. Gorji
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引用次数: 0

摘要

本研究旨在建立经验模型和方程,以预测在环境湿度、阳光照射强度和温度条件下应力下新兴的Sb2Se3基锑太阳能电池的能量转换效率的寿命退化和恢复。该模型是从文献报道的经验数据中提取的,并由与数据拟合的关键参数组成,以阐明硫系锑太阳能电池的稳定性行为。在1-10次太阳照射和30°C、40°C和50°C的温度条件下,介绍了太阳能电池效率变化的几个模型。模型预测了太阳能电池效率退化的饱和趋势,并通过经验公式进行了建模和表述。效率退化趋势呈指数下降趋势,采收率趋势呈指数上升趋势。相比之下,在长时间辐照和温度应力条件下,饱和效率遵循线性模型。对饱和降解及其对环境因素的依赖性的研究为预测锑光伏电池在长时间内受季节变化影响的最差效率提供了有价值的见解。
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Predicting the Degradation and Recovery Trends of the Photovoltaic Efficiency of Sb₂Se₃ Antimony Solar Cells
This study aims to develop empirical models and equations to predict the lifetime degradation and recovery in the energy conversion efficiency emerging Sb2Se3 based antimony solar cells which have been stressed under ambient moisture, sunlight irradiation intensities and temperature conditions. The models are extracted from empirical data reported in literature and is comprised from critical parameters which can fit with the data to elucidate on the stability behavior of antimony chalcogenide solar cells. Several models have been introduced for variation of solar cell efficiency under different irradiation from 1–10 suns and temperature conditions at 30° C, 40° C, and 50° C. The model predicts a saturation trend in degradation of solar cell efficiency which has been also modelled and formulated through empirical formulas. The efficiency degradation trends follow exponentially decreasing trends while the recovery trends show exponentially increasing trend. In contrast, the saturation efficiency follows linear models for prolonged irradiation and temperature stressing conditions. This examination of saturation in degradation and its dependence on environmental factors provides valuable insights into predicting the worst efficiency affected by seasonal changes over extended periods for antimony photovoltaics.
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来源期刊
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability 工程技术-工程:电子与电气
CiteScore
4.80
自引率
5.00%
发文量
71
审稿时长
6-12 weeks
期刊介绍: The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
期刊最新文献
2024 Index IEEE Transactions on Device and Materials Reliability Vol. 24 Table of Contents Blank Page IEEE Transactions on Device and Materials Reliability Information for Authors TechRxiv: Share Your Preprint Research with the World!
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