通过热处理工艺对 55nm 节点低 k 内部强化晶片结构进行 3 次和 5 次激光开槽及晶片强度鉴定

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics International Pub Date : 2024-05-31 DOI:10.1108/mi-08-2022-0145
Muhammad Hakeem Mohammad Nazri, Tan Chou Yong, Farazila B. Yusof, Gregory Soon How Thien, Chan Kah Yoong, Yap Boon Kar
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引用次数: 0

摘要

目的 晶片边缘质量及其相应的晶片强度是保证出色切割质量的两个重要因素,特别是对于低 k 值晶片,因为它们的机械性能较弱,结构脆弱。过去的文献表明,激光切割或开槽在消除晶片机械性能的同时,也能获得良好的切割质量。这是由于切割过程中芯片吸收了过多的热能。在内部结构中,低 k 值晶片的机械性能可以通过改性材料得到进一步提高。本文的目的是通过热处理工艺来增强晶片的机械性能。本方法是通过不同的激光微机械加工参数,即激光功率、频率、进给速度、散焦读数和单/多光束设置,对多个用不同激光能量密度刻划的低 k 值晶片进行热处理。本研究使用了波长为 355 nm 的 Nd:YAG 紫外激光二极管。对每个晶片上的晶粒反应进行彻底的目视检查,以确定是否有任何顶部崩裂和剥落。使用激光轮廓仪分析激光开槽的轮廓形状和最深深度,同时使用扫描电子显微镜(SEM)对侧壁进行表征,以检测裂纹和空隙。实验结果表明,与热处理晶片相比,标准晶片最容易出现物理缺陷。热处理晶片在晶粒结构完整性和晶粒强度性能方面有所改善,这表明使用高能量密度激光输出加工的晶片的单光束数据组增加了 6%,但其他激光开槽设置保持不变。而在多光束数据组中,采用不同激光设置的所有热处理晶片的晶片强度都略微提高了 4%。 原创性/价值 热处理工艺可以改善激光开槽低 K 值晶片的机械性能,从而提供更好的产品可靠性。
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3-pass and 5-pass laser grooving & die strength characterization for reinforced internal low-k 55nm node wafer structure via heat-treatment process

Purpose

Die edge quality with its corresponding die strength are two important factors for excellent dicing quality especially for low-k wafers due to their weak mechanical properties and fragile structures. It is shown in past literatures that laser dicing or grooving does yield good dicing quality with the elimination of die mechanical properties. This is due to the excess heat energy that the die absorbs throughout the procedure. Within the internal structure, the mechanical properties of low-k wafers can be further enhanced by modification of the material. The purpose of this paper is to strengthen the mechanical properties of wafers through the heat-treatment process.

Design/methodology/approach

The methodology of this approach is by heat treating several low-k wafers that are scribed with different laser energy densities with different laser micromachining parameters, i.e. laser power, frequency, feed speed, defocus reading and single/multibeam setup. An Nd:YAG ultraviolet laser diode that is operating at 355 nm wavelength was used in this study. The die responses from each wafer are thoroughly visually inspected to identify any topside chipping and peeling. The laser grooving profile shape and deepest depth are analysed using a laser profiler, while the sidewalls are characterized by scanning electron microscopy (SEM) to detect cracks and voids. The mechanical strength of each wafer types then undergoes three-point bending test, and the performance data is analyzed using Weibull plot.

Findings

The result from the experiment shows that the standard wafers are most susceptible to physical defects as compared to the heat-treated wafers. There is improvement for heat-treated wafers in terms of die structural integrity and die strength performance, which revealed a 6% increase in single beam data group for wafers that is processed using high energy density laser output but remains the same for other laser grooving settings. Whereas for multibeam data group, all heat-treated wafer with different laser settings receives a slight increase at 4% in die strength.

Originality/value

Heat-treatment process can yield improved mechanical properties for laser grooved low-k wafers and thus provide better product reliability.

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来源期刊
Microelectronics International
Microelectronics International 工程技术-材料科学:综合
CiteScore
1.90
自引率
9.10%
发文量
28
审稿时长
>12 weeks
期刊介绍: Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.
期刊最新文献
Study of the electronic transport performance of ZnO-SiO2 film: the construction of grain boundary barrier 3-pass and 5-pass laser grooving & die strength characterization for reinforced internal low-k 55nm node wafer structure via heat-treatment process Deformation and crack growth in multilayered ceramic capacitor during thermal reflow process: numerical and experimental investigation Simplifying finite elements analysis of four-point bending tests for flip chip microcomponents Quasi-elliptic band pass filter using resonators based on coupling theory for ultra-wide band applications
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