Tasnim Tareq Ferdous , Sadia Sultana Urmi , Md Abdul Kaium Khan , Mohammad Abdul Alim
{"title":"通过 SCAPS 1D 实现 Cs2TiI2Br4 卤化物双包晶太阳能电池的载流子传输层工程:接近肖克利-奎塞尔极限","authors":"Tasnim Tareq Ferdous , Sadia Sultana Urmi , Md Abdul Kaium Khan , Mohammad Abdul Alim","doi":"10.1016/j.micrna.2024.207881","DOIUrl":null,"url":null,"abstract":"<div><p>All-inorganic Cs<sub>2</sub>TiI<sub>x</sub>Br<sub>(6-x)</sub>-based perovskite solar cells (PSCs) are recently attracting a lot of attention for their tunable bandgaps, earth abundance, non-toxicity, and ultra-stability. Among the Cs<sub>2</sub>TiI<sub>x</sub>Br<sub>(6-x)</sub> family of materials, Cs<sub>2</sub>TiI<sub>2</sub>Br<sub>4</sub> with a bandgap of ∼1.38 eV has the potential to be an excellent single junction solar cell material with a theoretically higher Shockley-Queisser limit of power conversion efficiency (PCE). Its excellent optoelectronic properties make it a potential candidate for being the highest-performing PSC from the Cs<sub>2</sub>TiI<sub>x</sub>Br<sub>(6-x)</sub> family. In our study, a total of eight hole transport materials (P3HT, PTAA, Spiro-OMeTAD, PEDOT:Pss, CuSCN, CuI, NiO, and MoO<sub>3</sub>) and six electron transport materials (PCBM, TiO<sub>2</sub>, CdS, SnO<sub>2</sub>, ZnO, and IGZO) were investigated to select suitable charge transport materials. The defect densities of interface and absorber, different absorber layer thicknesses, several metal work functions, series-shunt resistance, and temperature were investigated to derive the conditions for optimum performance. After thorough investigation, we derived four novel devices with the combination of all the organic and inorganic charge transport materials to provide optimum performance. Among them, the combination of inorganic SnO<sub>2</sub> and CuSCN as electron and hole transport layer respectively achieved the highest PCE of 23.41 %.</p></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Carrier transport layer engineering of Cs2TiI2Br4 halide double perovskite solar cell via SCAPS 1D: Approaching the Shockley-Queisser limit\",\"authors\":\"Tasnim Tareq Ferdous , Sadia Sultana Urmi , Md Abdul Kaium Khan , Mohammad Abdul Alim\",\"doi\":\"10.1016/j.micrna.2024.207881\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>All-inorganic Cs<sub>2</sub>TiI<sub>x</sub>Br<sub>(6-x)</sub>-based perovskite solar cells (PSCs) are recently attracting a lot of attention for their tunable bandgaps, earth abundance, non-toxicity, and ultra-stability. Among the Cs<sub>2</sub>TiI<sub>x</sub>Br<sub>(6-x)</sub> family of materials, Cs<sub>2</sub>TiI<sub>2</sub>Br<sub>4</sub> with a bandgap of ∼1.38 eV has the potential to be an excellent single junction solar cell material with a theoretically higher Shockley-Queisser limit of power conversion efficiency (PCE). Its excellent optoelectronic properties make it a potential candidate for being the highest-performing PSC from the Cs<sub>2</sub>TiI<sub>x</sub>Br<sub>(6-x)</sub> family. In our study, a total of eight hole transport materials (P3HT, PTAA, Spiro-OMeTAD, PEDOT:Pss, CuSCN, CuI, NiO, and MoO<sub>3</sub>) and six electron transport materials (PCBM, TiO<sub>2</sub>, CdS, SnO<sub>2</sub>, ZnO, and IGZO) were investigated to select suitable charge transport materials. The defect densities of interface and absorber, different absorber layer thicknesses, several metal work functions, series-shunt resistance, and temperature were investigated to derive the conditions for optimum performance. After thorough investigation, we derived four novel devices with the combination of all the organic and inorganic charge transport materials to provide optimum performance. Among them, the combination of inorganic SnO<sub>2</sub> and CuSCN as electron and hole transport layer respectively achieved the highest PCE of 23.41 %.</p></div>\",\"PeriodicalId\":100923,\"journal\":{\"name\":\"Micro and Nanostructures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanostructures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773012324001304\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012324001304","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Carrier transport layer engineering of Cs2TiI2Br4 halide double perovskite solar cell via SCAPS 1D: Approaching the Shockley-Queisser limit
All-inorganic Cs2TiIxBr(6-x)-based perovskite solar cells (PSCs) are recently attracting a lot of attention for their tunable bandgaps, earth abundance, non-toxicity, and ultra-stability. Among the Cs2TiIxBr(6-x) family of materials, Cs2TiI2Br4 with a bandgap of ∼1.38 eV has the potential to be an excellent single junction solar cell material with a theoretically higher Shockley-Queisser limit of power conversion efficiency (PCE). Its excellent optoelectronic properties make it a potential candidate for being the highest-performing PSC from the Cs2TiIxBr(6-x) family. In our study, a total of eight hole transport materials (P3HT, PTAA, Spiro-OMeTAD, PEDOT:Pss, CuSCN, CuI, NiO, and MoO3) and six electron transport materials (PCBM, TiO2, CdS, SnO2, ZnO, and IGZO) were investigated to select suitable charge transport materials. The defect densities of interface and absorber, different absorber layer thicknesses, several metal work functions, series-shunt resistance, and temperature were investigated to derive the conditions for optimum performance. After thorough investigation, we derived four novel devices with the combination of all the organic and inorganic charge transport materials to provide optimum performance. Among them, the combination of inorganic SnO2 and CuSCN as electron and hole transport layer respectively achieved the highest PCE of 23.41 %.