激光能量对利用激光诱导等离子体生产的锡纳米粒子的结构和光学特性的影响

Raghad T. Ahmed, Ala'Fadhil Ahmed
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摘要

本研究旨在探讨锡纳米结构的结构和光学特性。采用脉冲激光沉积法在玻璃基底上沉积锡(Sn)薄膜。使用基本波长为 532 nm 和 1064 nm 的 Nd:YAG 激光,以 400 mJ 至 700 mJ 的不同能量和 6 Hz 的相同频率生成锡纳米结构。锡粉被压缩成直径为一厘米的圆盘作为样品。X 射线衍射(XRD)图显示出晶体结构,在不同能量(400-700 mJ)下有多个锡纳米结构峰。结果显示,在给定波长(532 纳米和 1064 纳米)下,700 毫焦时结晶尺寸分别为 65.90 纳米和 86.55 纳米,而 400 毫焦时结晶尺寸分别为 40.19 纳米和 17.19 纳米。场发射扫描电子显微镜(FE-SEM)图像显示了锡纳米结构的出现和聚集,特别是呈菜花状。色散能 X 射线光谱(EDS)分析结果表明,其中存在不同数量的锡、碳和氧。此外,还利用吸光度光谱分析了每种薄膜的光学特性,波长范围从 190 纳米到 1100 纳米。随着激光功率的增加,光学特性中的带隙能值下降,在 1064nm 和 532nm 波长下分别为 3.06 至 1.65 eV 和 3.22 至 1.82 eV。
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Influence of Laser Energy on the Structural and Optical Properties of Sn Nanoparticles produced with Laser-Induced Plasma
This study aimed to investigate the structure and optical properties of Sn nanostructures. Thin tin (Sn) films were deposited on glass substrates using the pulsed laser deposition method. Nd:YAG laser with fundamental wavelengths of 532 nm and 1064 nm was used to create Sn nanostructures with varying energies of 400 mJ to 700 mJ and the same frequency of 6 Hz. The tin powder was compressed into a disc with a one-centimetre diameter to serve as a sample. The X-ray diffraction (XRD) pattern showed a crystalline structure with several Sn nanostructures peaks at various energies (400–700 mJ). The results revealed a crystalline size of 65.90 nm and 86.55 nm at 700 mJ, while the size was 40.19 nm and 17.19 at 400 mJ for the given wavelengths (532nm and 1064 nm), respectively. The appearance of Sn nanostructures and the aggregation of, particularly in the form of cauliflower, were revealed in Field emission scanning electron microscopy (FE-SEM) images. The results of the dispersive energy X-ray spectroscopy (EDS) analysis showed that various amounts of tin, carbon, and oxygen were present. Additionally, the optical characteristics were investigated of each film using absorbance spectra, which covered a range of wavelengths from 190 to 1100 nm. As the laser power increased, the band gap energy values in the optical properties decreased, falling into the ranges of 3.06 to 1.65 eV and 3.22 to 1.82 eV at 1064nm and 532nm, respectively.
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