{"title":"面向密码学应用的基于 FinFET 的高性能线性反馈移位寄存器的设计与分析","authors":"M. Susaritha, J. Senthilkumar","doi":"10.1166/jno.2024.3613","DOIUrl":null,"url":null,"abstract":"Nowadays, all the elements of our surrounding is occupied by electronics. Electronics occupies major role on our day today life. Electronics device integration on a single chip enhances performance in terms of speed, low-power circuits, and area. Integration of VLSI provides better\n scalability and reliability. This research paper focused on the implementation of Linear feedback shift registers (LFSR) using FinFET techniques at the layout level for various applications, including cryptography. FinFETs are highlighted as a replacement for CMOS technology, offering advantages\n such as improved performance in terms of speed, low-power circuits, and area. Linear feedback shift registers are commonly used in digital systems and cryptography for generating pseudo-random sequences. The use of FinFET technology in the layout level suggests an interest in exploring advanced\n semiconductor technologies to enhance the performance of these circuits. The paper appears to cover different design methods of LFSRs, which could include aspects like circuit optimization, power efficiency, and reliability. The integration of electronics on a single chip, particularly with\n FinFET technology, is noted for its potential to provide better scalability and reliability. The first architecture is created using bulk CMOS techniques; whereas the second is constructed using two fin FinFET LFSRs. Using the Microwind designing tool, the third technique is developed with\n a 3-fin FinFET LFSR. It provides a solution for a novel FinFET architecture that implements LFSR. When comparing CMOS and FinFET circuit designs for LFSR, the latter achieves superior performance in terms of area and power efficiency. An analysis is conducted on the design techniques and performance\n of CMOS LFSR, 2 fin FinFET based LFSR, and 3 fin FinFET. According to the experimental findings, the CMOS-based LFSR uses 1.243 mW of power; the FinFET-based LFSR uses 90.47 μW, and the two fin FinFET LFRS uses 0.254 mW.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and Analysis of High Performance FinFET-Based Linear Feedback Shift Register for Cryptography Applications\",\"authors\":\"M. Susaritha, J. Senthilkumar\",\"doi\":\"10.1166/jno.2024.3613\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nowadays, all the elements of our surrounding is occupied by electronics. Electronics occupies major role on our day today life. Electronics device integration on a single chip enhances performance in terms of speed, low-power circuits, and area. Integration of VLSI provides better\\n scalability and reliability. This research paper focused on the implementation of Linear feedback shift registers (LFSR) using FinFET techniques at the layout level for various applications, including cryptography. FinFETs are highlighted as a replacement for CMOS technology, offering advantages\\n such as improved performance in terms of speed, low-power circuits, and area. Linear feedback shift registers are commonly used in digital systems and cryptography for generating pseudo-random sequences. The use of FinFET technology in the layout level suggests an interest in exploring advanced\\n semiconductor technologies to enhance the performance of these circuits. The paper appears to cover different design methods of LFSRs, which could include aspects like circuit optimization, power efficiency, and reliability. The integration of electronics on a single chip, particularly with\\n FinFET technology, is noted for its potential to provide better scalability and reliability. The first architecture is created using bulk CMOS techniques; whereas the second is constructed using two fin FinFET LFSRs. Using the Microwind designing tool, the third technique is developed with\\n a 3-fin FinFET LFSR. It provides a solution for a novel FinFET architecture that implements LFSR. When comparing CMOS and FinFET circuit designs for LFSR, the latter achieves superior performance in terms of area and power efficiency. An analysis is conducted on the design techniques and performance\\n of CMOS LFSR, 2 fin FinFET based LFSR, and 3 fin FinFET. According to the experimental findings, the CMOS-based LFSR uses 1.243 mW of power; the FinFET-based LFSR uses 90.47 μW, and the two fin FinFET LFRS uses 0.254 mW.\",\"PeriodicalId\":16446,\"journal\":{\"name\":\"Journal of Nanoelectronics and Optoelectronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Nanoelectronics and Optoelectronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1166/jno.2024.3613\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Nanoelectronics and Optoelectronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1166/jno.2024.3613","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Design and Analysis of High Performance FinFET-Based Linear Feedback Shift Register for Cryptography Applications
Nowadays, all the elements of our surrounding is occupied by electronics. Electronics occupies major role on our day today life. Electronics device integration on a single chip enhances performance in terms of speed, low-power circuits, and area. Integration of VLSI provides better
scalability and reliability. This research paper focused on the implementation of Linear feedback shift registers (LFSR) using FinFET techniques at the layout level for various applications, including cryptography. FinFETs are highlighted as a replacement for CMOS technology, offering advantages
such as improved performance in terms of speed, low-power circuits, and area. Linear feedback shift registers are commonly used in digital systems and cryptography for generating pseudo-random sequences. The use of FinFET technology in the layout level suggests an interest in exploring advanced
semiconductor technologies to enhance the performance of these circuits. The paper appears to cover different design methods of LFSRs, which could include aspects like circuit optimization, power efficiency, and reliability. The integration of electronics on a single chip, particularly with
FinFET technology, is noted for its potential to provide better scalability and reliability. The first architecture is created using bulk CMOS techniques; whereas the second is constructed using two fin FinFET LFSRs. Using the Microwind designing tool, the third technique is developed with
a 3-fin FinFET LFSR. It provides a solution for a novel FinFET architecture that implements LFSR. When comparing CMOS and FinFET circuit designs for LFSR, the latter achieves superior performance in terms of area and power efficiency. An analysis is conducted on the design techniques and performance
of CMOS LFSR, 2 fin FinFET based LFSR, and 3 fin FinFET. According to the experimental findings, the CMOS-based LFSR uses 1.243 mW of power; the FinFET-based LFSR uses 90.47 μW, and the two fin FinFET LFRS uses 0.254 mW.