通过投影光刻技术继续扩大尺寸

IF 2.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Micro and Nano Engineering Pub Date : 2024-06-01 DOI:10.1016/j.mne.2024.100263
Kurt Ronse
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引用次数: 0

摘要

本文讨论了光学光刻技术在实现摩尔定律方面发挥的重要作用。随着人工智能、机器学习和物联网的引入,对计算能力和数据存储容量的需求从未像今天这样大。光学光刻技术通过增加投影透镜的数值孔径、减少波长和创新光刻胶方案,满足了对分辨率的需求。在引入沉浸式光刻技术和双图案技术之后,业界又引入了超紫外光刻技术。虽然从 193 纳米光刻过渡到极紫外光刻非常困难,但极紫外光刻遵循与光学光刻相同的缩放规律。结论是,通过高 NA EUV 光刻技术的发展,光学光刻技术的缩放规律将继续支持摩尔定律。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Continued dimensional scaling through projection lithography

This article discusses the important role that optical lithography has played in realizing Moore's Law. With the introduction of Artificial Intelligence, Machine Learning, and the Internet of Things, the demand for computing power and data storage capacity has never been as large as today. Optical lithography has been able to keep up with the resolution demand by increasing the Numerical Aperture of the projection Lens, decreasing the wavelength and innovative resist schemes. After the introduction of Immersion lithography and Double patterning, EUV was introduced by the industry. Although the transition from 193 nm lithography to EUV lithography was very difficult, EUV follows the same scaling laws as Optical Lithography. The conclusion is that the scaling laws of Optical Lithography continue to support Moore's Law, through the development of high NA EUV Lithography.

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来源期刊
Micro and Nano Engineering
Micro and Nano Engineering Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
67
审稿时长
80 days
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