Damanpreet Kaur, Rohit Dahiya, Nadeem Ahmed and Mukesh Kumar*,
{"title":"在非晶态 Ga2O3 中垂直分级氧空位,抵消太阳盲光电探测器中光反应与响应时间之间的传统折衷关系","authors":"Damanpreet Kaur, Rohit Dahiya, Nadeem Ahmed and Mukesh Kumar*, ","doi":"10.1021/acsaelm.4c00759","DOIUrl":null,"url":null,"abstract":"<p >Recently, amorphous Ga<sub>2</sub>O<sub>3</sub>-based photodetectors are garnering interest for their relative ease-of-growth at room temperature and their virtuous use in flexible electronics. However, a major concern that remains is the huge trade-off between key performance parameters, viz., photoresponse and response time. Being replete with oxygen vacancies, acting as trap centers, devices usually boast a large photoresponse but at the cost of longer response time due to prolonged carrier recombination. Most of remedial measures to offset this trade-off include oxygen vacancy engineering but in a continuous manner, implying creating/deleting vacancies throughout the film thickness, leading to a change in only one of the parameters. Herein, we propose defect engineering in amorphous Ga<sub>2</sub>O<sub>3</sub> by grading oxygen vacancies using an intermittent oxygen supply. XPS depth profile studies confirm gradation of vacancies, which may be accessed by applying a different bias, in resonance with electric field distribution simulations. Graded vacancy films show negligible persistent photoconductivity, a high PDCR of 3 × 10<sup>3</sup>, a high UV–vis rejection ratio of 1.49 × 10<sup>4</sup>, and a fast fall time of 85 ms as opposed to continuous supply films, which show either high photoresponse or fast speed (in seconds). This work provides a way to use graded oxygen vacancies as tool in defect engineering to offset the trade-off and achieve high photoresponse and fast response time in amorphous Ga<sub>2</sub>O<sub>3</sub> films simultaneously.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2024-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Vertically Graded Oxygen Vacancies in Amorphous Ga2O3 for Offsetting the Conventional Trade-Off between Photoresponse and Response Time in Solar-Blind Photodetectors\",\"authors\":\"Damanpreet Kaur, Rohit Dahiya, Nadeem Ahmed and Mukesh Kumar*, \",\"doi\":\"10.1021/acsaelm.4c00759\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Recently, amorphous Ga<sub>2</sub>O<sub>3</sub>-based photodetectors are garnering interest for their relative ease-of-growth at room temperature and their virtuous use in flexible electronics. However, a major concern that remains is the huge trade-off between key performance parameters, viz., photoresponse and response time. Being replete with oxygen vacancies, acting as trap centers, devices usually boast a large photoresponse but at the cost of longer response time due to prolonged carrier recombination. Most of remedial measures to offset this trade-off include oxygen vacancy engineering but in a continuous manner, implying creating/deleting vacancies throughout the film thickness, leading to a change in only one of the parameters. Herein, we propose defect engineering in amorphous Ga<sub>2</sub>O<sub>3</sub> by grading oxygen vacancies using an intermittent oxygen supply. XPS depth profile studies confirm gradation of vacancies, which may be accessed by applying a different bias, in resonance with electric field distribution simulations. Graded vacancy films show negligible persistent photoconductivity, a high PDCR of 3 × 10<sup>3</sup>, a high UV–vis rejection ratio of 1.49 × 10<sup>4</sup>, and a fast fall time of 85 ms as opposed to continuous supply films, which show either high photoresponse or fast speed (in seconds). This work provides a way to use graded oxygen vacancies as tool in defect engineering to offset the trade-off and achieve high photoresponse and fast response time in amorphous Ga<sub>2</sub>O<sub>3</sub> films simultaneously.</p>\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsaelm.4c00759\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.4c00759","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Vertically Graded Oxygen Vacancies in Amorphous Ga2O3 for Offsetting the Conventional Trade-Off between Photoresponse and Response Time in Solar-Blind Photodetectors
Recently, amorphous Ga2O3-based photodetectors are garnering interest for their relative ease-of-growth at room temperature and their virtuous use in flexible electronics. However, a major concern that remains is the huge trade-off between key performance parameters, viz., photoresponse and response time. Being replete with oxygen vacancies, acting as trap centers, devices usually boast a large photoresponse but at the cost of longer response time due to prolonged carrier recombination. Most of remedial measures to offset this trade-off include oxygen vacancy engineering but in a continuous manner, implying creating/deleting vacancies throughout the film thickness, leading to a change in only one of the parameters. Herein, we propose defect engineering in amorphous Ga2O3 by grading oxygen vacancies using an intermittent oxygen supply. XPS depth profile studies confirm gradation of vacancies, which may be accessed by applying a different bias, in resonance with electric field distribution simulations. Graded vacancy films show negligible persistent photoconductivity, a high PDCR of 3 × 103, a high UV–vis rejection ratio of 1.49 × 104, and a fast fall time of 85 ms as opposed to continuous supply films, which show either high photoresponse or fast speed (in seconds). This work provides a way to use graded oxygen vacancies as tool in defect engineering to offset the trade-off and achieve high photoresponse and fast response time in amorphous Ga2O3 films simultaneously.