Hao Su, Yiyuan Cai, Yuhuan Lin, Yunfeng Xie, Yongfeng Mai, Shenghua Zhou, Guangchong Hu, Yu He, Feichi Zhou, Xiaoguang Liu, Longyang Lin, Yida Li, Hongyu Yu, Kai Chen
{"title":"研究低至 10 mK 的长沟道体 MOSFET 阈值电压模型和 4 K 时的关键模拟参数","authors":"Hao Su, Yiyuan Cai, Yuhuan Lin, Yunfeng Xie, Yongfeng Mai, Shenghua Zhou, Guangchong Hu, Yu He, Feichi Zhou, Xiaoguang Liu, Longyang Lin, Yida Li, Hongyu Yu, Kai Chen","doi":"10.1002/jnm.3258","DOIUrl":null,"url":null,"abstract":"<p>Threshold voltage behavior at cryogenic temperatures is dominated by interface traps. This mechanism leads to different trends of the threshold voltage for NMOS and PMOS toward deep cryogenic temperature. This study investigates threshold voltage (<i>V</i><sub><i>th</i></sub>) at cryogenic temperatures down to 10 mK for the first time, based on the recently developed physical charge-based analytical threshold voltage model. To investigate the impact of devices on circuits at low temperatures, crucial MOSFET and analog design parameters, including transconductance (<i>g</i><sub><i>m</i></sub>), subthreshold swing (<i>SS</i>), linear region current (<i>I</i><sub><i>lin</i></sub>) and <i>g</i><sub><i>m</i></sub>/<i>I</i><sub><i>DS</i></sub> related parameters are characterized and compared from 300 to 4 K. A Discussion on circuit performance and power consumption has been conducted to provide useful insights for low-temperature CMOS circuit design.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K\",\"authors\":\"Hao Su, Yiyuan Cai, Yuhuan Lin, Yunfeng Xie, Yongfeng Mai, Shenghua Zhou, Guangchong Hu, Yu He, Feichi Zhou, Xiaoguang Liu, Longyang Lin, Yida Li, Hongyu Yu, Kai Chen\",\"doi\":\"10.1002/jnm.3258\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Threshold voltage behavior at cryogenic temperatures is dominated by interface traps. This mechanism leads to different trends of the threshold voltage for NMOS and PMOS toward deep cryogenic temperature. This study investigates threshold voltage (<i>V</i><sub><i>th</i></sub>) at cryogenic temperatures down to 10 mK for the first time, based on the recently developed physical charge-based analytical threshold voltage model. To investigate the impact of devices on circuits at low temperatures, crucial MOSFET and analog design parameters, including transconductance (<i>g</i><sub><i>m</i></sub>), subthreshold swing (<i>SS</i>), linear region current (<i>I</i><sub><i>lin</i></sub>) and <i>g</i><sub><i>m</i></sub>/<i>I</i><sub><i>DS</i></sub> related parameters are characterized and compared from 300 to 4 K. A Discussion on circuit performance and power consumption has been conducted to provide useful insights for low-temperature CMOS circuit design.</p>\",\"PeriodicalId\":50300,\"journal\":{\"name\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3258\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3258","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K
Threshold voltage behavior at cryogenic temperatures is dominated by interface traps. This mechanism leads to different trends of the threshold voltage for NMOS and PMOS toward deep cryogenic temperature. This study investigates threshold voltage (Vth) at cryogenic temperatures down to 10 mK for the first time, based on the recently developed physical charge-based analytical threshold voltage model. To investigate the impact of devices on circuits at low temperatures, crucial MOSFET and analog design parameters, including transconductance (gm), subthreshold swing (SS), linear region current (Ilin) and gm/IDS related parameters are characterized and compared from 300 to 4 K. A Discussion on circuit performance and power consumption has been conducted to provide useful insights for low-temperature CMOS circuit design.
期刊介绍：
Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models.
The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics.
Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
