利用晶体中电子的参数 X 射线辐射确定成像板的参数

A. V. Berdnichenko, A.V. Budko, V.V. Kolodochkin, A.S. Skliarova, Y. Takabayashi, I. Vnukov
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引用次数: 0

摘要

实验数据与在运动学理论框架内对晶体中电子的参数 X 射线辐射量和角度分布的计算结果之间的良好一致性,使我们能够利用测量结果来确定 X 射线板灵敏度的光子能量依赖性。使用多种类型的成像板对硅晶体中能量为 255 MeV 的电子参数 X 射线辐射的角度分布进行测量的结果,与考虑到目前已知的影响测量结果的所有实验因素的计算结果进行了比较。针对两个反射阶的光子能量以及 (111)、(1̅1̅1) 和 (110) 反射面,确定了所研究的 X 射线板灵敏度的光谱依赖性。
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Use of parametric X-ray radiation of electrons in crystals to determine the parameters of imaging-plates
Good agreement between experimental data and the results of calculations of the yield and angular distributions of parametric X-ray radiation of electrons in crystals within the framework of kinematic theory enables us to use the measurement results to determine the photon energy dependence of the sensitivity of X-ray plates. The results of measurements of the angular distributions of parametric X-ray radiation of electrons with an energy of 255 MeV in a Si crystal using imaging plates of several types were compared with the results of calculations that take into account all currently known experimental factors that influence the measurement results. The spectral dependence of the sensitivity of the studied X-ray plates was determined for photon energies of two orders of reflection and for the (111), (1̅1̅1), and (110) reflection planes.
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