基于紧凑型多层叠加瓜奈拉变压器的 50-680 MHz GaAs 功率放大器

0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-04-26 DOI:10.1109/LMWT.2024.3386883
Wentao Zhou;Zixian Ma;Bing Lan;Jun Chen;Zhaosheng Liu;Qun Jane Gu;Chunyi Song;Zhiwei Xu
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引用次数: 0

摘要

本文介绍了一种采用 0.25-${\mu }\text{m}$ GaAs pHEMT 工艺制造的亚 GHz 超宽带功率放大器 (PA)。通过节省空间的多层堆叠拓扑结构设计了一个紧凑的关内拉型变压器,从而在多倍频程频率范围内实现了单端到差分的转换和阻抗变换。采用差分级联拓扑结构和片外变压器的功率放大器能在较小的尺寸内实现大于 31 dBm 的高饱和输出功率,频率范围为 50680 MHz(173% 分数带宽)。当采用 5 V 电源时,所制造的功率放大器微系统可提供 34.5 dBm 的峰值输出功率,并实现 24.0 dB 的最大增益、52.7% 的峰值功率附加效率 (PAE) 以及高线性度。
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A Compact Multilayer-Stacked Guanella Transformer Based 50–680-MHz GaAs Power Amplifier
This letter presents a sub-GHz ultra-wideband power amplifier (PA) in a 0.25- ${\mu }\text{m}$ GaAs pHEMT process. A compact Guanella-type transformer is designed with a space-saving multilayer-stacked topology to achieve single-ended to differential conversion and impedance transformation over a multioctave frequency range. The proposed PA with differential cascode topology andOFF-chip transformers can achieve a high saturated output power larger than 31 dBm across 50680 MHz (173% fractional bandwidth) in a small dimension. When with a 5-V supply, the fabricated PA microsystem delivers a 34.5-dBm peak output power and achieves a 24.0-dB maximum gain, a 52.7% peak power-added efficiency (PAE), as well as high linearity.
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