Anna Piacibello;Roberto Quaglia;Rocco Giofrè;Ricardo Figueiredo;Paolo Colantonio;Nuno Borges Carvalho;Vaclav Valenta;Vittorio Camarchia
{"title":"用于 Ka 波段卫星通信的 3 GHz 带宽高增益、高线性度 MMIC GaN Doherty 功率放大器","authors":"Anna Piacibello;Roberto Quaglia;Rocco Giofrè;Ricardo Figueiredo;Paolo Colantonio;Nuno Borges Carvalho;Vaclav Valenta;Vittorio Camarchia","doi":"10.1109/LMWT.2024.3384306","DOIUrl":null,"url":null,"abstract":"This letter presents the design of a Doherty power amplifier (DPA) for satellite applications in the Ka-band downlink (17.3–20.3 GHz) implemented on a 100-nm GaN–Si HEMT technology. The design aims to achieve high gain and very high intrinsic linearity over a wide bandwidth of 3 GHz. The experimental characterization on the fabricated chip demonstrates that the DPA can maintain a noise-to-power ratio (NPR) higher than 25 dB and power-added efficiency (PAE) of 30% while providing 36 dBm of output power, when tested with a 100-MHz uniformly distributed signal, achieving state-of-the-art performance among the integrated power amplifiers for satellite communications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10495893","citationCount":"0","resultStr":"{\"title\":\"High-Gain and High-Linearity MMIC GaN Doherty Power Amplifier With 3-GHz Bandwidth for Ka-Band Satellite Communications\",\"authors\":\"Anna Piacibello;Roberto Quaglia;Rocco Giofrè;Ricardo Figueiredo;Paolo Colantonio;Nuno Borges Carvalho;Vaclav Valenta;Vittorio Camarchia\",\"doi\":\"10.1109/LMWT.2024.3384306\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents the design of a Doherty power amplifier (DPA) for satellite applications in the Ka-band downlink (17.3–20.3 GHz) implemented on a 100-nm GaN–Si HEMT technology. The design aims to achieve high gain and very high intrinsic linearity over a wide bandwidth of 3 GHz. The experimental characterization on the fabricated chip demonstrates that the DPA can maintain a noise-to-power ratio (NPR) higher than 25 dB and power-added efficiency (PAE) of 30% while providing 36 dBm of output power, when tested with a 100-MHz uniformly distributed signal, achieving state-of-the-art performance among the integrated power amplifiers for satellite communications.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10495893\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10495893/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10495893/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
High-Gain and High-Linearity MMIC GaN Doherty Power Amplifier With 3-GHz Bandwidth for Ka-Band Satellite Communications
This letter presents the design of a Doherty power amplifier (DPA) for satellite applications in the Ka-band downlink (17.3–20.3 GHz) implemented on a 100-nm GaN–Si HEMT technology. The design aims to achieve high gain and very high intrinsic linearity over a wide bandwidth of 3 GHz. The experimental characterization on the fabricated chip demonstrates that the DPA can maintain a noise-to-power ratio (NPR) higher than 25 dB and power-added efficiency (PAE) of 30% while providing 36 dBm of output power, when tested with a 100-MHz uniformly distributed signal, achieving state-of-the-art performance among the integrated power amplifiers for satellite communications.
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