电解质门控垂直晶体管电荷传输实现光电转换（Adv.）

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Electronic Materials Pub Date : 2024-06-10 DOI:10.1002/aelm.202470021

Douglas Henrique Vieira, Gabriel Leonardo Nogueira, Leandro Merces, Carlos César Bof Bufon, Neri Alves

{"title":"电解质门控垂直晶体管电荷传输实现光电转换（Adv.）","authors":"Douglas Henrique Vieira, Gabriel Leonardo Nogueira, Leandro Merces, Carlos César Bof Bufon, Neri Alves","doi":"10.1002/aelm.202470021","DOIUrl":null,"url":null,"abstract":"<p><b>Oxide-Based Electrolyte-Gated Transistors</b></p><p>ZnO-based transistors have been fabricated using an innovative configuration that combines vertical architecture with electrolyte usage (see article number 2300562 by Douglas Henrique Vieira, Neri Alves, and co-workers). The diode counterpart unveils a current–voltage relationship arising from space-charge limited current, which undergoes continuous shift due to the field-effect promoted by the charge accumulation in the source's perforation, driven by its capacitor counterpart. Beyond the transport mechanism, the findings showcase excellence in current switching based on irradiance – a phenomenon analogous to the field-effect.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 6","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202470021","citationCount":"0","resultStr":"{\"title\":\"Electrolyte-Gated Vertical Transistor Charge Transport Enables Photo-Switching (Adv. Electron. Mater. 6/2024)\",\"authors\":\"Douglas Henrique Vieira, Gabriel Leonardo Nogueira, Leandro Merces, Carlos César Bof Bufon, Neri Alves\",\"doi\":\"10.1002/aelm.202470021\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><b>Oxide-Based Electrolyte-Gated Transistors</b></p><p>ZnO-based transistors have been fabricated using an innovative configuration that combines vertical architecture with electrolyte usage (see article number 2300562 by Douglas Henrique Vieira, Neri Alves, and co-workers). The diode counterpart unveils a current–voltage relationship arising from space-charge limited current, which undergoes continuous shift due to the field-effect promoted by the charge accumulation in the source's perforation, driven by its capacitor counterpart. Beyond the transport mechanism, the findings showcase excellence in current switching based on irradiance – a phenomenon analogous to the field-effect.\\n\\n <figure>\\n <div><picture>\\n <source></source></picture><p></p>\\n </div>\\n </figure></p>\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":\"10 6\",\"pages\":\"\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2024-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202470021\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/aelm.202470021\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/aelm.202470021","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

基于氧化物的电解质门控晶体管ZnO 基晶体管的制造采用了一种创新配置，将垂直结构与电解质的使用相结合（参见 Douglas Henrique Vieira、Neri Alves 及合作者的 2300562 号文章）。二极管的对应物揭示了空间电荷限制电流所产生的电流-电压关系，这种关系在电容器对应物的驱动下，由于源穿孔中电荷积累所产生的场效应而不断发生变化。除了传输机制之外，研究结果还展示了基于辐照度的电流开关的卓越性能--这是一种类似于场效应的现象。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

摘要图片

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Electrolyte-Gated Vertical Transistor Charge Transport Enables Photo-Switching (Adv. Electron. Mater. 6/2024)

Oxide-Based Electrolyte-Gated Transistors

ZnO-based transistors have been fabricated using an innovative configuration that combines vertical architecture with electrolyte usage (see article number 2300562 by Douglas Henrique Vieira, Neri Alves, and co-workers). The diode counterpart unveils a current–voltage relationship arising from space-charge limited current, which undergoes continuous shift due to the field-effect promoted by the charge accumulation in the source's perforation, driven by its capacitor counterpart. Beyond the transport mechanism, the findings showcase excellence in current switching based on irradiance – a phenomenon analogous to the field-effect.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.