{"title":"无铅三吸收层全过氧化物太阳能电池中无电荷传输层的设计与模拟研究。","authors":"Guangdong Li, Mingxiang Xu, Zhong Chen","doi":"10.1007/s12200-024-00119-1","DOIUrl":null,"url":null,"abstract":"<p><p>The multiple absorber layer perovskite solar cells (PSCs) with charge transport layers-free (CTLs-free) have drawn widespread research interest due to their simplified architecture and promising photoelectric characteristics. Under the circumstances, the novel design of CTLs-free inversion PSCs with stable and nontoxic three absorber layers (triple Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>, single MASnI<sub>3</sub>, double Cs<sub>2</sub>TiBr<sub>6</sub>) as optical-harvester has been numerically simulated by utilizing wxAMPS simulation software and achieved high power conversion efficiency (PCE) of 14.8834%. This is owing to the innovative architecture of PSCs favors efficient transport and extraction of more holes and the slender band gap MASnI<sub>3</sub> extends the absorption spectrum to the near-infrared periphery compared with the two absorber layers architecture of PSCs. Moreover, the performance of the device with p-type-Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>/p-type-MASnI<sub>3</sub>/n-type-Cs<sub>2</sub>TiBr<sub>6</sub> architecture is superior to the one with the p-type-Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>/n-type-MASnI<sub>3</sub>/n-type-Cs<sub>2</sub>TiBr<sub>6</sub> architecture due to less carrier recombination and higher carrier life time inside the absorber layers. The simulation results reveal that Cs<sub>2</sub>TiF<sub>6</sub> double perovskite material stands out as the best alternative. Additionally, an excellent PCE of 21.4530% can be obtained with the thicker MASnI<sub>3</sub> absorber layer thickness (0.4 µm). Lastly, the highest-performance photovoltaic devices (28.6193%) can be created with the optimized perovskite doping density of around E15 cm<sup>3</sup> (Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>), E18 cm<sup>3</sup> (MASnI<sub>3</sub>), and 1.5E19 cm<sup>3</sup> (Cs<sub>2</sub>TiBr<sub>6</sub>). This work manifests that the proposed CTLs-free PSCs with multi-absorber layers shall be a relevant reference for forward applications in electro-optical and optoelectronic devices.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11166623/pdf/","citationCount":"0","resultStr":"{\"title\":\"Design and simulation investigations on charge transport layers-free in lead-free three absorber layer all-perovskite solar cells.\",\"authors\":\"Guangdong Li, Mingxiang Xu, Zhong Chen\",\"doi\":\"10.1007/s12200-024-00119-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>The multiple absorber layer perovskite solar cells (PSCs) with charge transport layers-free (CTLs-free) have drawn widespread research interest due to their simplified architecture and promising photoelectric characteristics. Under the circumstances, the novel design of CTLs-free inversion PSCs with stable and nontoxic three absorber layers (triple Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>, single MASnI<sub>3</sub>, double Cs<sub>2</sub>TiBr<sub>6</sub>) as optical-harvester has been numerically simulated by utilizing wxAMPS simulation software and achieved high power conversion efficiency (PCE) of 14.8834%. This is owing to the innovative architecture of PSCs favors efficient transport and extraction of more holes and the slender band gap MASnI<sub>3</sub> extends the absorption spectrum to the near-infrared periphery compared with the two absorber layers architecture of PSCs. Moreover, the performance of the device with p-type-Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>/p-type-MASnI<sub>3</sub>/n-type-Cs<sub>2</sub>TiBr<sub>6</sub> architecture is superior to the one with the p-type-Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>/n-type-MASnI<sub>3</sub>/n-type-Cs<sub>2</sub>TiBr<sub>6</sub> architecture due to less carrier recombination and higher carrier life time inside the absorber layers. The simulation results reveal that Cs<sub>2</sub>TiF<sub>6</sub> double perovskite material stands out as the best alternative. Additionally, an excellent PCE of 21.4530% can be obtained with the thicker MASnI<sub>3</sub> absorber layer thickness (0.4 µm). Lastly, the highest-performance photovoltaic devices (28.6193%) can be created with the optimized perovskite doping density of around E15 cm<sup>3</sup> (Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>), E18 cm<sup>3</sup> (MASnI<sub>3</sub>), and 1.5E19 cm<sup>3</sup> (Cs<sub>2</sub>TiBr<sub>6</sub>). This work manifests that the proposed CTLs-free PSCs with multi-absorber layers shall be a relevant reference for forward applications in electro-optical and optoelectronic devices.</p>\",\"PeriodicalId\":12685,\"journal\":{\"name\":\"Frontiers of Optoelectronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11166623/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Frontiers of Optoelectronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1007/s12200-024-00119-1\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Frontiers of Optoelectronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s12200-024-00119-1","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Design and simulation investigations on charge transport layers-free in lead-free three absorber layer all-perovskite solar cells.
The multiple absorber layer perovskite solar cells (PSCs) with charge transport layers-free (CTLs-free) have drawn widespread research interest due to their simplified architecture and promising photoelectric characteristics. Under the circumstances, the novel design of CTLs-free inversion PSCs with stable and nontoxic three absorber layers (triple Cs3Bi2I9, single MASnI3, double Cs2TiBr6) as optical-harvester has been numerically simulated by utilizing wxAMPS simulation software and achieved high power conversion efficiency (PCE) of 14.8834%. This is owing to the innovative architecture of PSCs favors efficient transport and extraction of more holes and the slender band gap MASnI3 extends the absorption spectrum to the near-infrared periphery compared with the two absorber layers architecture of PSCs. Moreover, the performance of the device with p-type-Cs3Bi2I9/p-type-MASnI3/n-type-Cs2TiBr6 architecture is superior to the one with the p-type-Cs3Bi2I9/n-type-MASnI3/n-type-Cs2TiBr6 architecture due to less carrier recombination and higher carrier life time inside the absorber layers. The simulation results reveal that Cs2TiF6 double perovskite material stands out as the best alternative. Additionally, an excellent PCE of 21.4530% can be obtained with the thicker MASnI3 absorber layer thickness (0.4 µm). Lastly, the highest-performance photovoltaic devices (28.6193%) can be created with the optimized perovskite doping density of around E15 cm3 (Cs3Bi2I9), E18 cm3 (MASnI3), and 1.5E19 cm3 (Cs2TiBr6). This work manifests that the proposed CTLs-free PSCs with multi-absorber layers shall be a relevant reference for forward applications in electro-optical and optoelectronic devices.
期刊介绍:
Frontiers of Optoelectronics seeks to provide a multidisciplinary forum for a broad mix of peer-reviewed academic papers in order to promote rapid communication and exchange between researchers in China and abroad. It introduces and reflects significant achievements being made in the field of photonics or optoelectronics. The topics include, but are not limited to, semiconductor optoelectronics, nano-photonics, information photonics, energy photonics, ultrafast photonics, biomedical photonics, nonlinear photonics, fiber optics, laser and terahertz technology and intelligent photonics. The journal publishes reviews, research articles, letters, comments, special issues and so on.
Frontiers of Optoelectronics especially encourages papers from new emerging and multidisciplinary areas, papers reflecting the international trends of research and development, and on special topics reporting progress made in the field of optoelectronics. All published papers will reflect the original thoughts of researchers and practitioners on basic theories, design and new technology in optoelectronics.
Frontiers of Optoelectronics is strictly peer-reviewed and only accepts original submissions in English. It is a fully OA journal and the APCs are covered by Higher Education Press and Huazhong University of Science and Technology.
● Presents the latest developments in optoelectronics and optics
● Emphasizes the latest developments of new optoelectronic materials, devices, systems and applications
● Covers industrial photonics, information photonics, biomedical photonics, energy photonics, laser and terahertz technology, and more