Xijian Zhang, Jidong Jin, Jaekyun Kim, Claudio Balocco, Jiawei Zhang, Aimin Song
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引用次数: 0
摘要
本研究介绍了将基于二氧化钛的肖特基二极管设计成双极电阻式存储器的双向开关。这些肖特基二极管中的二氧化钛薄膜是通过阳极氧化工艺制备的。这些二极管的反向电流随着反向电压的升高呈指数增长，最终与正向电流相匹配。当两个二极管背靠背连接时，它们显示出卓越的电流-电压对称性，并提供比单个二极管更宽的离态电压范围，最高可达 3.65 V。无论是使用两个二极管还是单个二极管，开关的可调离态电压范围（0.40 V 至 3.65 V）都与铂电极溅射过程中的二氧化钛层厚度和氧分压密切相关。这些二极管具有双向开关特性，可以作为有效的开关元件，解决双极电阻式存储器中的潜行路径问题。本文受版权保护。
TiO2‐Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories
This study presents TiO2‐based Schottky diodes designed as bidirectional switches for bipolar resistive memories. The TiO2 films in these Schottky diodes are prepared through an anodization process. The reverse current of these diodes exhibits an exponential increase with rising reverse voltage, ultimately matching the forward current. When two diodes are connected back‐to‐back, they demonstrate superior current‐voltage symmetry and provide a wider off‐state voltage range compared to a single diode, reaching up to 3.65 V. The adjustable off‐state voltage range (0.40 V to 3.65 V) of the switch, whether utilizing two diodes or a single diode, correlates well with the TiO2 layer thickness and oxygen partial pressure during Pt electrode sputtering. These diodes possess bidirectional switching characteristics and can serve as effective switch elements to address the sneak‐path issue in bipolar resistive memories.This article is protected by copyright. All rights reserved.
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