{"title":"溅射碳化硅薄膜的结构和光学特性研究","authors":"Mukesh Kumar Mukesh Kumar","doi":"10.62638/zasmat1143","DOIUrl":null,"url":null,"abstract":"The present study explored the deposition of amorphous silicon carbide (a-SiC) thin films on Si (100) and glass substrates using RF-magnetron sputtering. The sputtering power is changed from 100 to 250 W to study its influence on the characteristics of a-SiC thin films. Raman spectroscopy reveals the formation of a-SiC as well as carbon clusters. The film deposited at 100 W clearly shows the presence of both transverse optical (TO) and longitudinal optical (LO) phonon modes. The average roughness of the a-SiC films found to follow an increasing trend with increase in the sputtering power. The optical band gap of the a-SiC films measured by UV-Visible spectrophotometer was found to increase up to 2.45 eV with decrease in sputtering power. All a-SiC thin films were highly transparent. The Photoluminescence (PL) spectroscopy results were in agreement with the data observed by UV-Visible spectroscopy","PeriodicalId":23842,"journal":{"name":"Zastita materijala","volume":"90 22","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Studies of structural and optical properties of sputtered SiC thin films\",\"authors\":\"Mukesh Kumar Mukesh Kumar\",\"doi\":\"10.62638/zasmat1143\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The present study explored the deposition of amorphous silicon carbide (a-SiC) thin films on Si (100) and glass substrates using RF-magnetron sputtering. The sputtering power is changed from 100 to 250 W to study its influence on the characteristics of a-SiC thin films. Raman spectroscopy reveals the formation of a-SiC as well as carbon clusters. The film deposited at 100 W clearly shows the presence of both transverse optical (TO) and longitudinal optical (LO) phonon modes. The average roughness of the a-SiC films found to follow an increasing trend with increase in the sputtering power. The optical band gap of the a-SiC films measured by UV-Visible spectrophotometer was found to increase up to 2.45 eV with decrease in sputtering power. All a-SiC thin films were highly transparent. The Photoluminescence (PL) spectroscopy results were in agreement with the data observed by UV-Visible spectroscopy\",\"PeriodicalId\":23842,\"journal\":{\"name\":\"Zastita materijala\",\"volume\":\"90 22\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Zastita materijala\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.62638/zasmat1143\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Zastita materijala","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.62638/zasmat1143","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Studies of structural and optical properties of sputtered SiC thin films
The present study explored the deposition of amorphous silicon carbide (a-SiC) thin films on Si (100) and glass substrates using RF-magnetron sputtering. The sputtering power is changed from 100 to 250 W to study its influence on the characteristics of a-SiC thin films. Raman spectroscopy reveals the formation of a-SiC as well as carbon clusters. The film deposited at 100 W clearly shows the presence of both transverse optical (TO) and longitudinal optical (LO) phonon modes. The average roughness of the a-SiC films found to follow an increasing trend with increase in the sputtering power. The optical band gap of the a-SiC films measured by UV-Visible spectrophotometer was found to increase up to 2.45 eV with decrease in sputtering power. All a-SiC thin films were highly transparent. The Photoluminescence (PL) spectroscopy results were in agreement with the data observed by UV-Visible spectroscopy
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