Perovskite 高熵氧化物改性(Bi0.5Na0.5)TiO3 基陶瓷的卓越储能性能

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-06-12 DOI:10.1021/acsaelm.4c00679
Xue Zhang, Fan Zhang*, Yiwen Niu, Zhiqiang Zhang, Xueqiong Lei and Zhan Jie Wang, 
{"title":"Perovskite 高熵氧化物改性(Bi0.5Na0.5)TiO3 基陶瓷的卓越储能性能","authors":"Xue Zhang,&nbsp;Fan Zhang*,&nbsp;Yiwen Niu,&nbsp;Zhiqiang Zhang,&nbsp;Xueqiong Lei and Zhan Jie Wang,&nbsp;","doi":"10.1021/acsaelm.4c00679","DOIUrl":null,"url":null,"abstract":"<p >Due to the typical dielectric relaxation behavior of perovskite high-entropy ceramics (HECs), high-entropy engineering is beneficial for improving energy storage performance and has drawn extensive concern. In this study, high-entropy oxide (Bi<sub>0.2</sub>Na<sub>0.2</sub>Ba<sub>0.2</sub>Sr<sub>0.2</sub>Ca<sub>0.2</sub>)(Ti<sub>0.9</sub>Nb<sub>0.1</sub>)O<sub>3</sub> (BNCBSTN)-modified 0.45(Bi<sub>0.5</sub>Na<sub>0.5</sub>)TiO<sub>3</sub>-0.55(Sr<sub>0.7</sub>Bi<sub>0.2</sub>)TiO<sub>3</sub> (BNT-SBT) systems, BNT-SBT-<i>x</i>BNCBSTN (0 ≤ <i>x</i> ≤ 0.5) ceramics, were designed and prepared using a hydrothermal method. It is found that the introduction of BNCBSTN into BNT-SBT promotes the configuration entropy and induces strong dielectric relaxation behavior, thereby greatly improving the energy storage performance. In addition, grain refinement, increased resistivity, and widened band gap are achieved by the modification of BNCBSTN, leading to a significant enhancement of the breakdown electric field (<i>E</i><sub>b</sub>). Consequently, BNT-SBT-0.3BNCBSTN HEC exhibits a preeminent recoverable energy density (<i>W</i><sub>rec</sub> = 6.04 J/cm<sup>3</sup>) and energy storage efficiency (η = 85%) under an excellent <i>E</i><sub>b</sub> of 410 kV/cm as well as good temperature and frequency stability. The remarkable improvement in energy storage performance indicates that modifying the ferroelectric system with high-entropy oxide is a feasible approach for developing energy storage capacitors.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Excellent Energy Storage Performance of Perovskite High-Entropy Oxide-Modified (Bi0.5Na0.5)TiO3-Based Ceramics\",\"authors\":\"Xue Zhang,&nbsp;Fan Zhang*,&nbsp;Yiwen Niu,&nbsp;Zhiqiang Zhang,&nbsp;Xueqiong Lei and Zhan Jie Wang,&nbsp;\",\"doi\":\"10.1021/acsaelm.4c00679\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Due to the typical dielectric relaxation behavior of perovskite high-entropy ceramics (HECs), high-entropy engineering is beneficial for improving energy storage performance and has drawn extensive concern. In this study, high-entropy oxide (Bi<sub>0.2</sub>Na<sub>0.2</sub>Ba<sub>0.2</sub>Sr<sub>0.2</sub>Ca<sub>0.2</sub>)(Ti<sub>0.9</sub>Nb<sub>0.1</sub>)O<sub>3</sub> (BNCBSTN)-modified 0.45(Bi<sub>0.5</sub>Na<sub>0.5</sub>)TiO<sub>3</sub>-0.55(Sr<sub>0.7</sub>Bi<sub>0.2</sub>)TiO<sub>3</sub> (BNT-SBT) systems, BNT-SBT-<i>x</i>BNCBSTN (0 ≤ <i>x</i> ≤ 0.5) ceramics, were designed and prepared using a hydrothermal method. It is found that the introduction of BNCBSTN into BNT-SBT promotes the configuration entropy and induces strong dielectric relaxation behavior, thereby greatly improving the energy storage performance. In addition, grain refinement, increased resistivity, and widened band gap are achieved by the modification of BNCBSTN, leading to a significant enhancement of the breakdown electric field (<i>E</i><sub>b</sub>). Consequently, BNT-SBT-0.3BNCBSTN HEC exhibits a preeminent recoverable energy density (<i>W</i><sub>rec</sub> = 6.04 J/cm<sup>3</sup>) and energy storage efficiency (η = 85%) under an excellent <i>E</i><sub>b</sub> of 410 kV/cm as well as good temperature and frequency stability. The remarkable improvement in energy storage performance indicates that modifying the ferroelectric system with high-entropy oxide is a feasible approach for developing energy storage capacitors.</p>\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsaelm.4c00679\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.4c00679","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

由于包晶高熵陶瓷(HECs)具有典型的介电弛豫行为,高熵工程有利于提高储能性能,因此受到广泛关注。在这项研究中,高熵氧化物(Bi0.2Na0.2Ba0.2Sr0.2Ca0.2)(Ti0.9Nb0.1)O3(BNCBSTN)改性的 0.45(Bi0.5Na0.5)TiO3-0.55(Sr0.7Bi0.2)TiO3(BNT-SBT)体系,即 BNT-SBT-xBNCBSTN(0 ≤ x ≤ 0.5)陶瓷。研究发现,在 BNT-SBT 中引入 BNCBSTN 可促进构型熵,诱导强烈的介电弛豫行为,从而大大提高储能性能。此外,BNCBSTN 的改性还实现了晶粒细化、电阻率提高和带隙增宽,从而显著增强了击穿电场(Eb)。因此,BNT-SBT-0.3BNCBSTN HEC 在 410 kV/cm 的优异 Eb 下表现出卓越的可恢复能量密度(Wrec = 6.04 J/cm3)和储能效率(η = 85%),并具有良好的温度和频率稳定性。储能性能的显著提高表明,用高熵氧化物改造铁电系统是开发储能电容器的一种可行方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

摘要图片

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Excellent Energy Storage Performance of Perovskite High-Entropy Oxide-Modified (Bi0.5Na0.5)TiO3-Based Ceramics

Due to the typical dielectric relaxation behavior of perovskite high-entropy ceramics (HECs), high-entropy engineering is beneficial for improving energy storage performance and has drawn extensive concern. In this study, high-entropy oxide (Bi0.2Na0.2Ba0.2Sr0.2Ca0.2)(Ti0.9Nb0.1)O3 (BNCBSTN)-modified 0.45(Bi0.5Na0.5)TiO3-0.55(Sr0.7Bi0.2)TiO3 (BNT-SBT) systems, BNT-SBT-xBNCBSTN (0 ≤ x ≤ 0.5) ceramics, were designed and prepared using a hydrothermal method. It is found that the introduction of BNCBSTN into BNT-SBT promotes the configuration entropy and induces strong dielectric relaxation behavior, thereby greatly improving the energy storage performance. In addition, grain refinement, increased resistivity, and widened band gap are achieved by the modification of BNCBSTN, leading to a significant enhancement of the breakdown electric field (Eb). Consequently, BNT-SBT-0.3BNCBSTN HEC exhibits a preeminent recoverable energy density (Wrec = 6.04 J/cm3) and energy storage efficiency (η = 85%) under an excellent Eb of 410 kV/cm as well as good temperature and frequency stability. The remarkable improvement in energy storage performance indicates that modifying the ferroelectric system with high-entropy oxide is a feasible approach for developing energy storage capacitors.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊最新文献
Piezoelectric and Triboelectric Contributions by Aromatic Hyperbranched Polyesters of Second-Generation/PVDF Nanofiber-Based Nanogenerators for Energy Harvesting and Wearable Electronics Fingerprint-Mimicking, ZIF-67 Decorated, Triboelectric Nanogenerator for IoT Cloud-Supported Self-Powered Smart Glove for Paralyzed Patient Care Microwave-Based Fast and Efficient Synthesis of K0.5Na0.5NbO3 (KNN) Ceramics and Its Performance Evaluation Nanogap Channel and Reconfigurable Split-Gate Logic Achieved via Nano Scissoring on Ambipolar MoTe2 Transistors Inorganic p-Type Tellurium-Based Synaptic Transistors: Complementary Synaptic Pairs with n-Type Devices for Energy-Efficient Operation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1