Haiqing Zhong, Shihai You*, Jianbo Wu, Zeng-Kui Zhu, Panpan Yu, Hang Li, Zi-Yang Wu, Yang Li, Qianwen Guan, Hongliang Dai, Chang Qu, Jiahong Wang, Shuang Chen, Chengmin Ji and Junhua Luo*,
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Here, we report a 2D (BPEA)<sub>2</sub>PbI<sub>4</sub> (BPEA = <i>R</i>-1-(4-bromophenyl)ethylammonium) perovskite with Br-substituted aromatic spacer capable of introducing abundant interactions, e.g., the molecular electrostatic forces between Br atoms and aromatic rings and halogen bonds of Br–I, in the interlayer space, which effectively suppresses ion migration and thus enables superior operational stability. Constructing direct X-ray detectors based on high-quality single crystals of (BPEA)<sub>2</sub>PbI<sub>4</sub> results in a high sensitivity of 1,003 μC Gy<sup>–1</sup> cm<sup>–2</sup>, a low detection limit of 366 nGy s<sup>–1</sup>, and an ultralow baseline drift of 3.48 × 10<sup>–8</sup> nA cm<sup>–1</sup> s<sup>–1</sup> V<sup>–1</sup> at 80 V bias. More strikingly, it also exhibits exceptional operational stability under high flux, long-time X-ray irradiation, and large working voltage. 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引用次数: 0
摘要
在直接 X 射线探测方面,金属卤化物包光体因其易于合成和引人入胜的光电特性而优于传统的无机半导体。然而,在高外电场作用下,离子的剧烈迁移所导致的运行不稳定性仍然是包晶探测器实际应用中的一大问题。在这里,我们报告了一种二维 (BPEA)2PbI4(BPEA = R-1-(4-溴苯基)乙基铵)包晶石,它具有 Br 取代的芳香族间隔物,能够在层间空间引入丰富的相互作用,例如 Br 原子与芳香环之间的分子静电力以及 Br-I 的卤素键,从而有效抑制离子迁移,实现优异的工作稳定性。基于 (BPEA)2PbI4 的高质量单晶构建直接 X 射线探测器,可实现 1,003 μC Gy-1 cm-2 的高灵敏度、366 nGy s-1 的低检测限以及 80 V 偏压下 3.48 × 10-8 nA cm-1 s-1 V-1 的超低基线漂移。更引人注目的是,在高通量、长时间 X 射线辐照和大工作电压条件下,它还表现出卓越的工作稳定性。这项工作显示了多种层间相互作用在稳定包晶 X 射线探测器方面的整合,为未来设计包晶光电器件的实际应用提供了新的见解。
Metal halide perovskites have outperformed conventional inorganic semiconductors in direct X-ray detection due to their ease of synthesis and intriguing photoelectric properties. However, the operational instability caused by severe ion migration under a high external electric field is still a big concern for the practical application of perovskite detectors. Here, we report a 2D (BPEA)2PbI4 (BPEA = R-1-(4-bromophenyl)ethylammonium) perovskite with Br-substituted aromatic spacer capable of introducing abundant interactions, e.g., the molecular electrostatic forces between Br atoms and aromatic rings and halogen bonds of Br–I, in the interlayer space, which effectively suppresses ion migration and thus enables superior operational stability. Constructing direct X-ray detectors based on high-quality single crystals of (BPEA)2PbI4 results in a high sensitivity of 1,003 μC Gy–1 cm–2, a low detection limit of 366 nGy s–1, and an ultralow baseline drift of 3.48 × 10–8 nA cm–1 s–1 V–1 at 80 V bias. More strikingly, it also exhibits exceptional operational stability under high flux, long-time X-ray irradiation, and large working voltage. This work shows an integration of multiple interlayer interactions to stabilize perovskite X-ray detectors, providing new insights into the future design of perovskite optoelectronic devices toward practical application.