Impact of self-heating on geometric variations in nano-ribbon FET: Analog/RF perspective

In recent technology, Nano Ribbon FET (NR-FET) is an emerging device due to its enhanced effective width than other FET devices. In this paper, the electrical parameters including self-heating effect (SHE) for NRFET is presented. The drain current (I_D), transconductance (g_m), transconductance generation factor (TGF = g_m/I_D), and cut-off frequency (f_c) are highlighted in NRFET with/without considering SHE. It is observed that various electrical parameters are degraded by significant amount in the presence of SHE for NR-FET. The g_m is changed from 1.45 to 0.725 mS in presence of SHE, whereas, f_c is reduced to 2.47 THz from 4.5 THz in presence of SHE for NRFET. Further, the effect of variation in width and height of ribbon in NRFET on e-density, drain current, and transconductance are reported with/without including SHE. Result reveals that with increased width/height, the performance of NRFET is enhanced and this is further degraded with including SHE. Finally, the important parameters like lattice temperature and thermal resistance (R_th) are calculated for NRFET. The calculated lattice temperature and R_th are 375.2 K and 1.534 K/μWatt, respectively.