包晶结构 KMgF3 单晶中由 Ce3+ 离子诱发的畸变

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-06-13 DOI:10.1016/j.jcrysgro.2024.127787
Mayrene A. Uy , Angelo P. Rillera , Keito Shinohara , Melvin John F. Empizo , Toshihiko Shimizu , Kohei Yamanoi , Akira Yoshikawa , Nobuhiko Sarukura , Hitoshi Abe
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引用次数: 0

摘要

我们研究了离子在(立方)包晶石结构的 KMgF3 晶体中引起的局部结构畸变,该晶体具有潜在的真空紫外线(VUV)应用前景。标称掺杂浓度为 1.0 摩尔的晶体显示出以 196、203、209、227 和 233 纳米为中心的五个吸收带和以 266 和 282 纳米为中心的两个发射带。这些吸收带和发射带归因于离子的 4f-5d 转变。我们的 Ce K- 和 - 边 XAS 分析证实了 KMgF3 晶体中存在氧化态。我们的分析揭示了一个明显扭曲的配位环境,其配位数(CN)为 5.03±0.55,Ce-F 键的平均长度为 2.44±0.01 Å。4f 和 5d 态的强烈混合和巨大的配体场效应也隐含在 Ce -edge XANES 光谱中,一个强烈的前沿峰就是证明。从光学角度来看,这些混合效应和配体场效应与 1.03 eV 的大晶体场分裂(8285)相一致。尽管如此,掺杂的 KMgF3 仍然是一种候选的紫外光学材料,因为它的斯托克斯位移很小,只有 0.64eV (5141 )。
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Ce3+ ion-induced distortion in a perovskite-structured KMgF3 single crystal

We investigate the local structural distortion induced by

ion in a (cubic) perovskite-structured KMgF3 crystal for potential vacuum ultraviolet (VUV) applications. The crystal with 1.0 mol% nominal doping concentration exhibits five absorption bands centered at 196, 203, 209, 227, and 233 nm and two emission bands centered at 266 and 282 nm. These absorption and emission bands are attributed to the 4f5d transitions of the
ion. Our Ce K- and
-edge XAS analyses confirm the presence of
oxidation state in the KMgF3 crystal. Our analyses reveal a significantly distorted coordination environment which has a coordination number (CN) of 5.03±0.55 and an average Ce–F bond length of 2.44±0.01 Å. Strong mixing of the 4f and 5d states and large ligand-field effects are also implied in the Ce
-edge XANES spectrum, as evidenced by an intense pre-edge peak. Optically, these mixing and ligand field effects conform to the large crystal field splitting of 1.03 eV (8285
). Although this was the case,
-doped KMgF3 remains a candidate VUV optical material due to its small Stokes shift of 0.64eV (5141
).

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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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