基于 [1]Benzothieno[3,2-b]Benzothiophene (BTBT) 衍生物的有机可见光盲紫外光二极管和像素阵列成像仪

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Electronic Materials Pub Date : 2024-06-24 DOI:10.1002/aelm.202400128
Wei Wang, Yujun Deng, Shuai Sun, Massimiliano Galluzzi, Yang Jiao, Paul K. Chu, Zeren Li, Jia Li, Jianquan Yao
{"title":"基于 [1]Benzothieno[3,2-b]Benzothiophene (BTBT) 衍生物的有机可见光盲紫外光二极管和像素阵列成像仪","authors":"Wei Wang,&nbsp;Yujun Deng,&nbsp;Shuai Sun,&nbsp;Massimiliano Galluzzi,&nbsp;Yang Jiao,&nbsp;Paul K. Chu,&nbsp;Zeren Li,&nbsp;Jia Li,&nbsp;Jianquan Yao","doi":"10.1002/aelm.202400128","DOIUrl":null,"url":null,"abstract":"<p>Visible-blind ultraviolet (VBUV) photodetectors are designed for UV detection without responding to visible light, thus having many applications in communications, flame detection, environment monitoring, and astronomy. Herein, an organic device concept based on the bulk heterojunction (BHJ) photodiode is presented for high-performance VBUV photodetection and imaging. The BHJ, comprised of an organic electron donor, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), and an electron acceptor, indene-C<sub>60</sub> bisadduct (ICBA), shows efficient generation and transport of free charges upon UV irradiation. The organic photodiode (OPD) delivers exceptional VBUV photodetection performance. At a low voltage of −0.5 V, the device exhibits a wide linear dynamic range of 98.15 dB. Furthermore, the OPD can detect ultra-low light intensities down to 0.58 µW cm<sup>−2</sup> with a high photoresponsivity of 0.12 A W<sup>−1</sup> and specific detectivity of 2.75 × 10<sup>12</sup> Jones. More importantly, by integrating the OPD with a readout integrated circuit, the pixel-array organic VBUV imager is demonstrated to have high-quality imaging capability. The results reveal a novel strategy to design VBUV photodetectors and imagers with balanced performance, cost, area, flexibility, and power consumption.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 10","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400128","citationCount":"0","resultStr":"{\"title\":\"Organic Visible-Blind Ultraviolet Photodiodes and Pixel-Array Imagers Based on [1]Benzothieno[3,2-b]Benzothiophene (BTBT) Derivatives\",\"authors\":\"Wei Wang,&nbsp;Yujun Deng,&nbsp;Shuai Sun,&nbsp;Massimiliano Galluzzi,&nbsp;Yang Jiao,&nbsp;Paul K. Chu,&nbsp;Zeren Li,&nbsp;Jia Li,&nbsp;Jianquan Yao\",\"doi\":\"10.1002/aelm.202400128\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Visible-blind ultraviolet (VBUV) photodetectors are designed for UV detection without responding to visible light, thus having many applications in communications, flame detection, environment monitoring, and astronomy. Herein, an organic device concept based on the bulk heterojunction (BHJ) photodiode is presented for high-performance VBUV photodetection and imaging. The BHJ, comprised of an organic electron donor, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), and an electron acceptor, indene-C<sub>60</sub> bisadduct (ICBA), shows efficient generation and transport of free charges upon UV irradiation. The organic photodiode (OPD) delivers exceptional VBUV photodetection performance. At a low voltage of −0.5 V, the device exhibits a wide linear dynamic range of 98.15 dB. Furthermore, the OPD can detect ultra-low light intensities down to 0.58 µW cm<sup>−2</sup> with a high photoresponsivity of 0.12 A W<sup>−1</sup> and specific detectivity of 2.75 × 10<sup>12</sup> Jones. More importantly, by integrating the OPD with a readout integrated circuit, the pixel-array organic VBUV imager is demonstrated to have high-quality imaging capability. The results reveal a novel strategy to design VBUV photodetectors and imagers with balanced performance, cost, area, flexibility, and power consumption.</p>\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":\"10 10\",\"pages\":\"\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2024-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400128\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/aelm.202400128\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/aelm.202400128","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

可见光盲紫外(VBUV)光电探测器设计用于紫外检测,而不对可见光做出反应,因此在通信、火焰检测、环境监测和天文学等领域有着广泛的应用。本文介绍了一种基于体异质结(BHJ)光电二极管的有机器件概念,用于高性能紫外光检测和成像。BHJ 由有机电子供体 2,7-二辛基[1]苯并噻吩并[3,2-b][1]苯并噻吩(C8-BTBT)和电子受体茚-C60 双加合物(ICBA)组成,在紫外线照射下可高效产生和传输自由电荷。有机光电二极管(OPD)具有卓越的紫外光检测性能。在 -0.5 V 的低电压下,该器件具有 98.15 dB 的宽线性动态范围。此外,OPD 还能检测低至 0.58 µW cm-2 的超低光强,具有 0.12 A W-1 的高光致发光率和 2.75 × 1012 Jones 的比检测率。更重要的是,通过将 OPD 与读出集成电路集成,像素阵列有机 VBUV 成像仪被证明具有高质量的成像能力。研究结果揭示了一种设计 VBUV 光电探测器和成像器的新策略,可实现性能、成本、面积、灵活性和功耗之间的平衡。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

摘要图片

摘要图片

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Organic Visible-Blind Ultraviolet Photodiodes and Pixel-Array Imagers Based on [1]Benzothieno[3,2-b]Benzothiophene (BTBT) Derivatives

Visible-blind ultraviolet (VBUV) photodetectors are designed for UV detection without responding to visible light, thus having many applications in communications, flame detection, environment monitoring, and astronomy. Herein, an organic device concept based on the bulk heterojunction (BHJ) photodiode is presented for high-performance VBUV photodetection and imaging. The BHJ, comprised of an organic electron donor, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), and an electron acceptor, indene-C60 bisadduct (ICBA), shows efficient generation and transport of free charges upon UV irradiation. The organic photodiode (OPD) delivers exceptional VBUV photodetection performance. At a low voltage of −0.5 V, the device exhibits a wide linear dynamic range of 98.15 dB. Furthermore, the OPD can detect ultra-low light intensities down to 0.58 µW cm−2 with a high photoresponsivity of 0.12 A W−1 and specific detectivity of 2.75 × 1012 Jones. More importantly, by integrating the OPD with a readout integrated circuit, the pixel-array organic VBUV imager is demonstrated to have high-quality imaging capability. The results reveal a novel strategy to design VBUV photodetectors and imagers with balanced performance, cost, area, flexibility, and power consumption.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
期刊最新文献
Physical Reservoir Computing Utilizing Ion-Gating Transistors Operating in Electric Double Layer and Redox Mechanisms Single-Cell Membrane Potential Stimulation and Recording by an Electrolyte-Gated Organic Field-Effect Transistor 2D α-In2Se3 Flakes for High Frequency Tunable and Switchable Film Bulk Acoustic Wave Resonators Aqueous Ammonia Sensor with Neuromorphic Detection 3D Nano Hafnium-Based Ferroelectric Memory Vertical Array for High-Density and High-Reliability Logic-In-Memory Application
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1