Md Akibul Islam, Eric Nicholson, Nima Barri, Momoko Onodera, Danny Starkov, Peter Serles, Shuo He, Boran Kumral, Ali Zavabeti, Haleh Shahsa, Teng Cui, Guorui Wang, Tomoki Machida, C.V. Singh, Tobin Filleter
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引用次数: 0
摘要
通过机械应变调节二维材料的电学特性主要集中在 MoS2 和 WS2 等 n 型二维材料上,而 WSe2 等 p 型二维材料的研究相对较少。本文研究了受控机械应变对单层和双层 WSe2 电子传输特性的影响。通过耦合原子力显微镜(AFM)纳米压痕技术和导电原子力显微镜,证明了微调 WSe2 电子能带结构的能力。这项研究为了解 WSe2 的电子特性如何对机械应变做出反应提供了宝贵的机理见解,而机械应变是开发柔性光电子器件的关键前提。研究还观察到,在高压下,AFM尖端/单层WSe2/金属基底结从肖特基接触转变为欧姆接触,这归因于从基底到WSe2的大量电荷注入。这些发现对于在薄而灵活的 PMOS(p 型金属-氧化物-半导体)器件中设计高效的金属/半导体接触具有重要意义。
Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2
Tuning electrical properties of 2D materials through mechanical strain has predominantly focused on n-type 2D materials like MoS2 and WS2, while p-type 2D materials such as WSe2 remain relatively unexplored. Here, the impact of controlled mechanical strain on the electron transport characteristics of both mono and bi-layer WSe2 is studied. Through coupling atomic force microscopy (AFM) nanoindentation techniques and conductive AFM, the ability to finely tune the electronic band structure of WSe2 is demonstrated. The research offers valuable mechanistic insights into understanding how WSe2's electronic properties respond to mechanical strain, a critical prerequisite for the development of flexible photoelectronic devices. It is also observed that under high pressure, the AFM tip/monolayer WSe2/metal substrate junction transitions from Schottky to Ohmic contact, attributed to significant charge injection from the substrate to the WSe2. These findings are significant for designing efficient metal/semiconductor contact in thin and flexible PMOS (p-type Metal–Oxide–Semiconductor) devices.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.