Wen-Juan Ding , Yu Liu , Zhi-Qiang Xiao , Li Gao , Yu-Chen Li , Lin Zhu , Xiang Li , Wei-Min Li , Shuang Chen , Ai-Dong Li
{"title":"通过原子层沉积对 12 英寸硅基 Hf0.5Zr0.5O2 铁电电容器器件进行电气均匀性分析","authors":"Wen-Juan Ding , Yu Liu , Zhi-Qiang Xiao , Li Gao , Yu-Chen Li , Lin Zhu , Xiang Li , Wei-Min Li , Shuang Chen , Ai-Dong Li","doi":"10.1016/j.pnsc.2024.05.008","DOIUrl":null,"url":null,"abstract":"<div><p>The study on the uniformity of electrical performance of large wafer-scale Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) ferroelectric capacitors is still lacking yet now. In this work, TiN/HZO/TiN metal-ferroelectric-metal (MFM) devices on 12-inch silicon wafers have been fabricated by thermal atomic layer deposition. The correlation of thickness uniformity with device-to-device variation of electrical properties and yield of the 12-inch MFM system was investigated. It was found that the uniformity of ferroelectric properties is closely related to the variation of HZO thickness of the MFM system, the concentration of oxygen vacancies in the micro-region of the HZO film, and the ferroelectric phase micro-distribution on 12-inch Si wafer. This work provides some important information for the performance optimization of HfO<sub>2</sub>-based ferroelectric random access memories.</p></div>","PeriodicalId":20742,"journal":{"name":"Progress in Natural Science: Materials International","volume":"34 3","pages":"Pages 598-605"},"PeriodicalIF":4.8000,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical uniformity analyses on 12-inch Si-based Hf0.5Zr0.5O2 ferroelectric capacitor devices by atomic layer deposition\",\"authors\":\"Wen-Juan Ding , Yu Liu , Zhi-Qiang Xiao , Li Gao , Yu-Chen Li , Lin Zhu , Xiang Li , Wei-Min Li , Shuang Chen , Ai-Dong Li\",\"doi\":\"10.1016/j.pnsc.2024.05.008\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The study on the uniformity of electrical performance of large wafer-scale Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) ferroelectric capacitors is still lacking yet now. In this work, TiN/HZO/TiN metal-ferroelectric-metal (MFM) devices on 12-inch silicon wafers have been fabricated by thermal atomic layer deposition. The correlation of thickness uniformity with device-to-device variation of electrical properties and yield of the 12-inch MFM system was investigated. It was found that the uniformity of ferroelectric properties is closely related to the variation of HZO thickness of the MFM system, the concentration of oxygen vacancies in the micro-region of the HZO film, and the ferroelectric phase micro-distribution on 12-inch Si wafer. This work provides some important information for the performance optimization of HfO<sub>2</sub>-based ferroelectric random access memories.</p></div>\",\"PeriodicalId\":20742,\"journal\":{\"name\":\"Progress in Natural Science: Materials International\",\"volume\":\"34 3\",\"pages\":\"Pages 598-605\"},\"PeriodicalIF\":4.8000,\"publicationDate\":\"2024-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Progress in Natural Science: Materials International\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1002007124001199\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Natural Science: Materials International","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1002007124001199","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Electrical uniformity analyses on 12-inch Si-based Hf0.5Zr0.5O2 ferroelectric capacitor devices by atomic layer deposition
The study on the uniformity of electrical performance of large wafer-scale Hf0.5Zr0.5O2 (HZO) ferroelectric capacitors is still lacking yet now. In this work, TiN/HZO/TiN metal-ferroelectric-metal (MFM) devices on 12-inch silicon wafers have been fabricated by thermal atomic layer deposition. The correlation of thickness uniformity with device-to-device variation of electrical properties and yield of the 12-inch MFM system was investigated. It was found that the uniformity of ferroelectric properties is closely related to the variation of HZO thickness of the MFM system, the concentration of oxygen vacancies in the micro-region of the HZO film, and the ferroelectric phase micro-distribution on 12-inch Si wafer. This work provides some important information for the performance optimization of HfO2-based ferroelectric random access memories.
期刊介绍：
Progress in Natural Science: Materials International provides scientists and engineers throughout the world with a central vehicle for the exchange and dissemination of basic theoretical studies and applied research of advanced materials. The emphasis is placed on original research, both analytical and experimental, which is of permanent interest to engineers and scientists, covering all aspects of new materials and technologies, such as, energy and environmental materials; advanced structural materials; advanced transportation materials, functional and electronic materials; nano-scale and amorphous materials; health and biological materials; materials modeling and simulation; materials characterization; and so on. The latest research achievements and innovative papers in basic theoretical studies and applied research of material science will be carefully selected and promptly reported. Thus, the aim of this Journal is to serve the global materials science and technology community with the latest research findings.
As a service to readers, an international bibliography of recent publications in advanced materials is published bimonthly.
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