{"title":"使用金刚石凝胶盘对基于固相 Fenton 反应的碳化硅晶片抛光过程中的抛光性能和材料去除机理","authors":"Lanxing Xu , Kaiping Feng , Liang Zhao , Yanzhang Gu , Tianchen Zhao , Binghai Lyu","doi":"10.1016/j.jmatprotec.2024.118486","DOIUrl":null,"url":null,"abstract":"<div><p>The use of SiC wafer is widespread in many fields, especially in aerospace, energy, 5 G communications, and microelectronics. Chemical-mechanical polishing (CMP) is the primary method used for achieving an ultra-smooth surface on SiC wafers. However, CMP suffers from low efficiency, leading to increased processing time and costs. To address this issue, we developed a novel diamond gel polishing disc that incorporates SiO<sub>2</sub>/Fe<sub>3</sub>O<sub>4</sub> (S/F) powder. The disc enhances polishing efficiency through a solid-phase Fenton reaction between the disc and SiC. The research investigates the reaction mechanism and the material removal model of the polishing process using SEM, TEM, and XPS analysis. Experimental studies are conducted to assess the polishing performance and validate the effectiveness of the theoretical model. The findings indicate that SiC undergo a solid-phase Fenton reaction with polishing disc mixed S/F powder (SG-S/F disc) during polishing. The Fenton reaction generates hydroxyl radicals (·OH), which break the Si-C and Si-Si bonds in the crystal structure, leading to the formation of a softer nanoscale amorphous oxide layer on the SiC surface. The cyclic generation and removal of this oxide layer enable highly efficient polishing of SiC wafers. Compared to a gel disc without S/F (SG disc), SiC polished with the SG-S/F disc exhibits superior surface quality. Additionally, the material removal rate (<em>MRR</em>) of the SG-S/F disc reaches 1.42 μm/h, representing a 51.1 % improvement over that of the SG disc. These results clearly demonstrate that the solid-phase Fenton reaction significantly enhances the polishing performance of the gel polishing disc.</p></div>","PeriodicalId":367,"journal":{"name":"Journal of Materials Processing Technology","volume":null,"pages":null},"PeriodicalIF":6.7000,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polishing performance and material removal mechanism in the solid-phase Fenton reaction based polishing process of SiC wafer using diamond gel disc\",\"authors\":\"Lanxing Xu , Kaiping Feng , Liang Zhao , Yanzhang Gu , Tianchen Zhao , Binghai Lyu\",\"doi\":\"10.1016/j.jmatprotec.2024.118486\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The use of SiC wafer is widespread in many fields, especially in aerospace, energy, 5 G communications, and microelectronics. Chemical-mechanical polishing (CMP) is the primary method used for achieving an ultra-smooth surface on SiC wafers. However, CMP suffers from low efficiency, leading to increased processing time and costs. To address this issue, we developed a novel diamond gel polishing disc that incorporates SiO<sub>2</sub>/Fe<sub>3</sub>O<sub>4</sub> (S/F) powder. The disc enhances polishing efficiency through a solid-phase Fenton reaction between the disc and SiC. The research investigates the reaction mechanism and the material removal model of the polishing process using SEM, TEM, and XPS analysis. Experimental studies are conducted to assess the polishing performance and validate the effectiveness of the theoretical model. The findings indicate that SiC undergo a solid-phase Fenton reaction with polishing disc mixed S/F powder (SG-S/F disc) during polishing. The Fenton reaction generates hydroxyl radicals (·OH), which break the Si-C and Si-Si bonds in the crystal structure, leading to the formation of a softer nanoscale amorphous oxide layer on the SiC surface. The cyclic generation and removal of this oxide layer enable highly efficient polishing of SiC wafers. Compared to a gel disc without S/F (SG disc), SiC polished with the SG-S/F disc exhibits superior surface quality. Additionally, the material removal rate (<em>MRR</em>) of the SG-S/F disc reaches 1.42 μm/h, representing a 51.1 % improvement over that of the SG disc. These results clearly demonstrate that the solid-phase Fenton reaction significantly enhances the polishing performance of the gel polishing disc.</p></div>\",\"PeriodicalId\":367,\"journal\":{\"name\":\"Journal of Materials Processing Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":6.7000,\"publicationDate\":\"2024-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Processing Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0924013624002048\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, INDUSTRIAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Processing Technology","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924013624002048","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, INDUSTRIAL","Score":null,"Total":0}
Polishing performance and material removal mechanism in the solid-phase Fenton reaction based polishing process of SiC wafer using diamond gel disc
The use of SiC wafer is widespread in many fields, especially in aerospace, energy, 5 G communications, and microelectronics. Chemical-mechanical polishing (CMP) is the primary method used for achieving an ultra-smooth surface on SiC wafers. However, CMP suffers from low efficiency, leading to increased processing time and costs. To address this issue, we developed a novel diamond gel polishing disc that incorporates SiO2/Fe3O4 (S/F) powder. The disc enhances polishing efficiency through a solid-phase Fenton reaction between the disc and SiC. The research investigates the reaction mechanism and the material removal model of the polishing process using SEM, TEM, and XPS analysis. Experimental studies are conducted to assess the polishing performance and validate the effectiveness of the theoretical model. The findings indicate that SiC undergo a solid-phase Fenton reaction with polishing disc mixed S/F powder (SG-S/F disc) during polishing. The Fenton reaction generates hydroxyl radicals (·OH), which break the Si-C and Si-Si bonds in the crystal structure, leading to the formation of a softer nanoscale amorphous oxide layer on the SiC surface. The cyclic generation and removal of this oxide layer enable highly efficient polishing of SiC wafers. Compared to a gel disc without S/F (SG disc), SiC polished with the SG-S/F disc exhibits superior surface quality. Additionally, the material removal rate (MRR) of the SG-S/F disc reaches 1.42 μm/h, representing a 51.1 % improvement over that of the SG disc. These results clearly demonstrate that the solid-phase Fenton reaction significantly enhances the polishing performance of the gel polishing disc.
期刊介绍:
The Journal of Materials Processing Technology covers the processing techniques used in manufacturing components from metals and other materials. The journal aims to publish full research papers of original, significant and rigorous work and so to contribute to increased production efficiency and improved component performance.
Areas of interest to the journal include:
• Casting, forming and machining
• Additive processing and joining technologies
• The evolution of material properties under the specific conditions met in manufacturing processes
• Surface engineering when it relates specifically to a manufacturing process
• Design and behavior of equipment and tools.