用于对电解质门控有机晶体管进行操作性纳米级电特性分析的自动扫描介质显微镜工具箱

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Electronic Materials Pub Date : 2024-07-02 DOI:10.1002/aelm.202400222
Shubham Tanwar, Ruben Millan-Solsona, Sara Ruiz-Molina, Marta Mas-Torrent, Adrica Kyndiah, Gabriel Gomila
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引用次数: 0

摘要

电解质门控有机晶体管(EGOT)利用有机半导体的电子和离子传输特性,是许多生物传感和生物电子应用的关键推动因素,可在纳米尺度上选择性地感知、记录和监测不同的生物和生化过程,并将其转化为宏观电信号。要了解这种传导机制,需要多尺度表征工具来全面探测局部电特性,并将其与不同偏置点的器件行为联系起来。本文展示了一个自动扫描介电显微镜工具箱,该工具箱可对功能性 EGOT 进行操作性液内扫描介电显微镜测量,并进行广泛的数据分析,以揭示局部电特性的细微演变。本文强调了关键的实验注意事项,以实现数据采集的标准化、准确性和可重复性。所开发的方法通过基于有机小分子半导体和绝缘聚合物混合物的 EGOT 得到了验证,EGOT 可作为蓄积模式场效应晶体管工作。此外,还探测了高栅极电压下局部电气特性的退化,这显然是由于源电极边缘附近的有机半导体材料发生了不良的电化学膨胀,导致局部结晶秩序遭到破坏。所开发的方法为基于 EGOT 技术的系统探测铺平了道路,有助于进行有针对性的优化和基本理解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Automated Scanning Dielectric Microscopy Toolbox for Operando Nanoscale Electrical Characterization of Electrolyte-Gated Organic Transistors
Electrolyte-gated organic transistors (EGOTs) leveraging organic semiconductors' electronic and ionic transport characteristics are the key enablers for many biosensing and bioelectronic applications that can selectively sense, record, and monitor different biological and biochemical processes at the nanoscale and translate them into macroscopic electrical signals. Understanding such transduction mechanisms requires multiscale characterization tools to comprehensively probe local electrical properties and link them with device behavior across various bias points. Here, an automated scanning dielectric microscopy toolbox is demonstrated that performs operando in-liquid scanning dielectric microscopy measurements on functional EGOTs and carries out extensive data analysis to unravel the evolution of local electrical properties in minute detail. This paper emphasizes critical experimental considerations permitting standardized, accurate, and reproducible data acquisition. The developed approach is validated with EGOTs based on blends of organic small molecule semiconductor and insulating polymer that work as accumulation-mode field-effect transistors. Furthermore, the degradation of local electrical characteristics at high gate voltages is probed, which is apparently driven by the destruction of local crystalline order due to undesirable electrochemical swelling of the organic semiconducting material near the source electrode edge. The developed approach paves the way for systematic probing of EGOT-based technologies for targeted optimization and fundamental understanding.
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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