用于移位寄存器驱动器的柔性 IGZO TFT 技术

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Electronic Materials Pub Date : 2024-07-01 DOI:10.1002/aelm.202400036
Bin Bao, Dmitriy D. Karnaushenko, Jiawang Xu, Shouguo Wang, Vineeth Kumar Bandari, Oliver G. Schmidt, Daniil Karnaushenko
{"title":"用于移位寄存器驱动器的柔性 IGZO TFT 技术","authors":"Bin Bao, Dmitriy D. Karnaushenko, Jiawang Xu, Shouguo Wang, Vineeth Kumar Bandari, Oliver G. Schmidt, Daniil Karnaushenko","doi":"10.1002/aelm.202400036","DOIUrl":null,"url":null,"abstract":"Active sensing matrices play a pivotal role in various electronic devices, including optical and X-ray imaging arrays, electronic skins, and artificial tactile arrays, among others. These matrices function through a thin-film active switching mechanism, allowing for the scanning of rows and columns by external circuitry to read the sensory signals of individual pixels. Recently, indium–gallium-zinc oxide thin-film transistors (IGZO TFTs) have emerged as highly promising technology in the realm of flexible electronics. They enable the large-scale integration of functional circuits on flexible substrates. Shift registers are commonly employed as peripheral scanning circuits to sequentially address active-matrix arrays. To enhance system compactness and minimize external electrical connections, it is imperative to seamlessly integrate shift registers within the active matrices. However, contemporary flexible IGZO-based shift registers suffer from high operating voltages and low frequencies, which constrain their applicability in high-performance flexible sensors and displays. In response to this challenge, a breakthrough is presented in the form of low-voltage, high-frequency bootstrap shift registers implemented with flexible IGZO technology. The approach involves utilizing SU-8 buffered polyimide (PI) polymer foils as substrates. These foils boast an exceptional level of surface smoothness, significantly increasing the yield and performance of electronic components, including vias, IGZO TFTs, and capacitors used in the shift register circuitry. Additionally, HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> sandwich structures are employed as high-k dielectric layers to reduce the operational voltage. Thanks to the innovative circuit design and optimized fabrication methods, the 16-stage shift register can operate at just 1.8 V with a frequency of 15 kHz. This breakthrough promises to have a profound impact on a wide range of applications for driving flexible active-matrix electronic systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":5.3000,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Flexible IGZO TFT Technology for Shift Register Drivers\",\"authors\":\"Bin Bao, Dmitriy D. Karnaushenko, Jiawang Xu, Shouguo Wang, Vineeth Kumar Bandari, Oliver G. Schmidt, Daniil Karnaushenko\",\"doi\":\"10.1002/aelm.202400036\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Active sensing matrices play a pivotal role in various electronic devices, including optical and X-ray imaging arrays, electronic skins, and artificial tactile arrays, among others. These matrices function through a thin-film active switching mechanism, allowing for the scanning of rows and columns by external circuitry to read the sensory signals of individual pixels. Recently, indium–gallium-zinc oxide thin-film transistors (IGZO TFTs) have emerged as highly promising technology in the realm of flexible electronics. They enable the large-scale integration of functional circuits on flexible substrates. Shift registers are commonly employed as peripheral scanning circuits to sequentially address active-matrix arrays. To enhance system compactness and minimize external electrical connections, it is imperative to seamlessly integrate shift registers within the active matrices. However, contemporary flexible IGZO-based shift registers suffer from high operating voltages and low frequencies, which constrain their applicability in high-performance flexible sensors and displays. In response to this challenge, a breakthrough is presented in the form of low-voltage, high-frequency bootstrap shift registers implemented with flexible IGZO technology. The approach involves utilizing SU-8 buffered polyimide (PI) polymer foils as substrates. These foils boast an exceptional level of surface smoothness, significantly increasing the yield and performance of electronic components, including vias, IGZO TFTs, and capacitors used in the shift register circuitry. Additionally, HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> sandwich structures are employed as high-k dielectric layers to reduce the operational voltage. Thanks to the innovative circuit design and optimized fabrication methods, the 16-stage shift register can operate at just 1.8 V with a frequency of 15 kHz. This breakthrough promises to have a profound impact on a wide range of applications for driving flexible active-matrix electronic systems.\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2024-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/aelm.202400036\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400036","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

有源传感矩阵在各种电子设备中发挥着举足轻重的作用,其中包括光学和 X 射线成像阵列、电子皮肤和人工触觉阵列等。这些矩阵通过薄膜主动开关机制发挥作用,允许外部电路扫描行和列,读取单个像素的感应信号。最近,铟镓锌氧化物薄膜晶体管(IGZO TFT)已成为柔性电子领域极具前景的技术。它们可以在柔性基板上大规模集成功能电路。移位寄存器通常被用作外围扫描电路,对有源矩阵阵列进行顺序寻址。为了提高系统的紧凑性并尽量减少外部电气连接,必须将移位寄存器无缝集成到有源矩阵中。然而,目前基于 IGZO 的柔性移位寄存器工作电压高、频率低,限制了其在高性能柔性传感器和显示器中的应用。为了应对这一挑战,我们采用柔性 IGZO 技术实现了低电压、高频率自举式移位寄存器,并取得了突破性进展。该方法采用 SU-8 缓冲聚酰亚胺 (PI) 聚合物箔作为基板。这些箔片具有极高的表面平滑度,可显著提高电子元件(包括过孔、IGZO TFT 和移位寄存器电路中使用的电容器)的产量和性能。此外,还采用了 HfO2/Al2O3/HfO2 夹层结构作为高介电层,以降低工作电压。得益于创新的电路设计和优化的制造方法,16 级移位寄存器的工作电压仅为 1.8 V,频率为 15 kHz。这一突破有望对驱动柔性有源矩阵电子系统的广泛应用产生深远影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

摘要图片

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Flexible IGZO TFT Technology for Shift Register Drivers
Active sensing matrices play a pivotal role in various electronic devices, including optical and X-ray imaging arrays, electronic skins, and artificial tactile arrays, among others. These matrices function through a thin-film active switching mechanism, allowing for the scanning of rows and columns by external circuitry to read the sensory signals of individual pixels. Recently, indium–gallium-zinc oxide thin-film transistors (IGZO TFTs) have emerged as highly promising technology in the realm of flexible electronics. They enable the large-scale integration of functional circuits on flexible substrates. Shift registers are commonly employed as peripheral scanning circuits to sequentially address active-matrix arrays. To enhance system compactness and minimize external electrical connections, it is imperative to seamlessly integrate shift registers within the active matrices. However, contemporary flexible IGZO-based shift registers suffer from high operating voltages and low frequencies, which constrain their applicability in high-performance flexible sensors and displays. In response to this challenge, a breakthrough is presented in the form of low-voltage, high-frequency bootstrap shift registers implemented with flexible IGZO technology. The approach involves utilizing SU-8 buffered polyimide (PI) polymer foils as substrates. These foils boast an exceptional level of surface smoothness, significantly increasing the yield and performance of electronic components, including vias, IGZO TFTs, and capacitors used in the shift register circuitry. Additionally, HfO2/Al2O3/HfO2 sandwich structures are employed as high-k dielectric layers to reduce the operational voltage. Thanks to the innovative circuit design and optimized fabrication methods, the 16-stage shift register can operate at just 1.8 V with a frequency of 15 kHz. This breakthrough promises to have a profound impact on a wide range of applications for driving flexible active-matrix electronic systems.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
期刊最新文献
Infrared Photodetector Based on van der Waals MoS2/MoTe2 Hetero-Bilayer Modulated by Photogating Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review (Adv. Electron. Mater. 7/2024) Volatile and Nonvolatile Dual-Mode Switching Operations in an Ag-Ag2S Core-Shell Nanoparticle Atomic Switch Network Liquid-Solid Combination Memristors with Switchable Resistance Stretching, Tapping, or Compressing–What Role Does Triboelectricity Play in the Signal Output from Piezoelectric Nanogenerators?
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1