José Carlos Pérez-Martínez, Diego Martín-Martín, Belén Arredondo, Beatriz Romero
{"title":"揭开高性能卤化物包光体晶体管导电丝形成的奥秘","authors":"José Carlos Pérez-Martínez, Diego Martín-Martín, Belén Arredondo, Beatriz Romero","doi":"10.1002/aelm.202400067","DOIUrl":null,"url":null,"abstract":"<p>Halide perovskites (HPs) are promising materials for memristor devices because of their unique characteristics. In this study, nonvolatile resistive switching memory devices based on thick MAPbI<sub>3</sub> perovskite (800 nm) films with structure FTO/MAPbI<sub>3</sub>/polymethyl methacrylate (PMMA)/Ag are presented. Reproducible and reliable bipolar switching characteristics are demonstrated with an ultra-low operating voltage (−0.1 V), high ON/OFF ratio (10<sup>6</sup>), endurance (>2 × 10<sup>3</sup> times) and a record retention time (>10<sup>5 </sup>s). The <i>I–V</i> curve of the first cycle exhibits self-formed conductive filaments. These are attributed to the presence of metallic Pb resulting from an excess of PbI<sub>2</sub> in the perovskite film. The subsequent activation process involves the formation of conductive filaments, consisting of either iodide vacancies or migrated charged metals. Numerical simulations are then carried out to understand the nature of these conductive filaments and the role of the internal electric field in the migration of iodide ions, iodide vacancies, and Ag cations. Finally, an exhaustive model is proposed that explains the set and reset processes governing the first voltage cycle and the steady state, at different voltage ranges. In summary, this work offers a novel and thorough perspective of the complete resistive switching (RS) behavior in a MAPbI<sub>3</sub>/buffer/Ag memristor, supported by numerical simulations.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":5.3000,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400067","citationCount":"0","resultStr":"{\"title\":\"Unraveling Conductive Filament Formation in High Performance Halide Perovskite Memristor\",\"authors\":\"José Carlos Pérez-Martínez, Diego Martín-Martín, Belén Arredondo, Beatriz Romero\",\"doi\":\"10.1002/aelm.202400067\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Halide perovskites (HPs) are promising materials for memristor devices because of their unique characteristics. In this study, nonvolatile resistive switching memory devices based on thick MAPbI<sub>3</sub> perovskite (800 nm) films with structure FTO/MAPbI<sub>3</sub>/polymethyl methacrylate (PMMA)/Ag are presented. Reproducible and reliable bipolar switching characteristics are demonstrated with an ultra-low operating voltage (−0.1 V), high ON/OFF ratio (10<sup>6</sup>), endurance (>2 × 10<sup>3</sup> times) and a record retention time (>10<sup>5 </sup>s). The <i>I–V</i> curve of the first cycle exhibits self-formed conductive filaments. These are attributed to the presence of metallic Pb resulting from an excess of PbI<sub>2</sub> in the perovskite film. The subsequent activation process involves the formation of conductive filaments, consisting of either iodide vacancies or migrated charged metals. Numerical simulations are then carried out to understand the nature of these conductive filaments and the role of the internal electric field in the migration of iodide ions, iodide vacancies, and Ag cations. Finally, an exhaustive model is proposed that explains the set and reset processes governing the first voltage cycle and the steady state, at different voltage ranges. In summary, this work offers a novel and thorough perspective of the complete resistive switching (RS) behavior in a MAPbI<sub>3</sub>/buffer/Ag memristor, supported by numerical simulations.</p>\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2024-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400067\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/aelm.202400067\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/aelm.202400067","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Unraveling Conductive Filament Formation in High Performance Halide Perovskite Memristor
Halide perovskites (HPs) are promising materials for memristor devices because of their unique characteristics. In this study, nonvolatile resistive switching memory devices based on thick MAPbI3 perovskite (800 nm) films with structure FTO/MAPbI3/polymethyl methacrylate (PMMA)/Ag are presented. Reproducible and reliable bipolar switching characteristics are demonstrated with an ultra-low operating voltage (−0.1 V), high ON/OFF ratio (106), endurance (>2 × 103 times) and a record retention time (>105 s). The I–V curve of the first cycle exhibits self-formed conductive filaments. These are attributed to the presence of metallic Pb resulting from an excess of PbI2 in the perovskite film. The subsequent activation process involves the formation of conductive filaments, consisting of either iodide vacancies or migrated charged metals. Numerical simulations are then carried out to understand the nature of these conductive filaments and the role of the internal electric field in the migration of iodide ions, iodide vacancies, and Ag cations. Finally, an exhaustive model is proposed that explains the set and reset processes governing the first voltage cycle and the steady state, at different voltage ranges. In summary, this work offers a novel and thorough perspective of the complete resistive switching (RS) behavior in a MAPbI3/buffer/Ag memristor, supported by numerical simulations.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.