{"title":"独立稀土正交包晶中的偶数层依赖性多铁性","authors":"Shaowen Xu, Fanhao Jia, Ning Dai","doi":"10.1007/s11433-024-2372-8","DOIUrl":null,"url":null,"abstract":"<p>Freestanding oxide perovskites possess strong interlayer coupling between adjacent atomic layers, thus exerting a determinative effect on the magnetism and ferroelectricity of these atomic-scale materials. Here, we propose an effective strategy to manipulate magnetism and ferroelectricity in freestanding rare-earth orthorhombic perovskite via modulation of layer thickness. By performing first-principles calculations, an even-odd oscillation is demonstrated in few-layer GdAlO<sub>3</sub> perovskite (GAP). Specifically, odd-layer systems with charged atomic layers are ferromagnetic polar metals, while even-layer systems are antiferromagnetic ferroelectric semiconductors. This thickness-dependent magnetic phase transition originates from carrier doping, as rationalized by the Stoner criterion. Furthermore, we demonstrate the promotion of in-plane ferroelectricity via the concurrent application of two distinct antiferrodistortive displacements, each driven by formation and breaking of bonds. Analogous multiferroic phases may emerge in other transition metal oxide perovskites supporting multiple valence states, e.g., few-layer GdMO<sub>3</sub> (M = V, Cr, Mn, and Ni). This work puts forward a strategy for layer thickness engineering of magnetism and ferroelectricity in 2D oxide perovskite multiferroic materials.</p>","PeriodicalId":774,"journal":{"name":"Science China Physics, Mechanics & Astronomy","volume":null,"pages":null},"PeriodicalIF":6.4000,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Even-odd layer-dependent multiferroic in freestanding rare-earth orthorhombic perovskite\",\"authors\":\"Shaowen Xu, Fanhao Jia, Ning Dai\",\"doi\":\"10.1007/s11433-024-2372-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Freestanding oxide perovskites possess strong interlayer coupling between adjacent atomic layers, thus exerting a determinative effect on the magnetism and ferroelectricity of these atomic-scale materials. Here, we propose an effective strategy to manipulate magnetism and ferroelectricity in freestanding rare-earth orthorhombic perovskite via modulation of layer thickness. By performing first-principles calculations, an even-odd oscillation is demonstrated in few-layer GdAlO<sub>3</sub> perovskite (GAP). Specifically, odd-layer systems with charged atomic layers are ferromagnetic polar metals, while even-layer systems are antiferromagnetic ferroelectric semiconductors. This thickness-dependent magnetic phase transition originates from carrier doping, as rationalized by the Stoner criterion. Furthermore, we demonstrate the promotion of in-plane ferroelectricity via the concurrent application of two distinct antiferrodistortive displacements, each driven by formation and breaking of bonds. Analogous multiferroic phases may emerge in other transition metal oxide perovskites supporting multiple valence states, e.g., few-layer GdMO<sub>3</sub> (M = V, Cr, Mn, and Ni). This work puts forward a strategy for layer thickness engineering of magnetism and ferroelectricity in 2D oxide perovskite multiferroic materials.</p>\",\"PeriodicalId\":774,\"journal\":{\"name\":\"Science China Physics, Mechanics & Astronomy\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":6.4000,\"publicationDate\":\"2024-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Science China Physics, Mechanics & Astronomy\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1007/s11433-024-2372-8\",\"RegionNum\":1,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science China Physics, Mechanics & Astronomy","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1007/s11433-024-2372-8","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Even-odd layer-dependent multiferroic in freestanding rare-earth orthorhombic perovskite
Freestanding oxide perovskites possess strong interlayer coupling between adjacent atomic layers, thus exerting a determinative effect on the magnetism and ferroelectricity of these atomic-scale materials. Here, we propose an effective strategy to manipulate magnetism and ferroelectricity in freestanding rare-earth orthorhombic perovskite via modulation of layer thickness. By performing first-principles calculations, an even-odd oscillation is demonstrated in few-layer GdAlO3 perovskite (GAP). Specifically, odd-layer systems with charged atomic layers are ferromagnetic polar metals, while even-layer systems are antiferromagnetic ferroelectric semiconductors. This thickness-dependent magnetic phase transition originates from carrier doping, as rationalized by the Stoner criterion. Furthermore, we demonstrate the promotion of in-plane ferroelectricity via the concurrent application of two distinct antiferrodistortive displacements, each driven by formation and breaking of bonds. Analogous multiferroic phases may emerge in other transition metal oxide perovskites supporting multiple valence states, e.g., few-layer GdMO3 (M = V, Cr, Mn, and Ni). This work puts forward a strategy for layer thickness engineering of magnetism and ferroelectricity in 2D oxide perovskite multiferroic materials.
期刊介绍:
Science China Physics, Mechanics & Astronomy, an academic journal cosponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China, and published by Science China Press, is committed to publishing high-quality, original results in both basic and applied research.
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