通过新标准预测热负荷下模制底部填充倒装芯片封装模具边角处的裂纹萌生--第 I 部分:奇异应力场的精确表述

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Device and Materials Reliability Pub Date : 2024-06-28 DOI:10.1109/tdmr.2024.3420759
G.C. Lyu, X.P. Zhang, M.B. Zhou, C.B. Ke, Y.W. Mai
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Prediction of Crack Initiation at Die Corner of Molded Underfill Flip-Chip Packages Under Thermal Load by New Criteria—Part I: Accurate Formulation of Singular Stress Fields
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来源期刊
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability 工程技术-工程:电子与电气
CiteScore
4.80
自引率
5.00%
发文量
71
审稿时长
6-12 weeks
期刊介绍: The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
期刊最新文献
Suppression of Total Dose Effects on the Performance of InAlGaN/GaN MIS-HEMT via Field Plate Implementation Single-Event Burnout Effects of Complementary LDMOS Devices in High-Voltage Integrated Circuits Prediction of Crack Initiation at Die Corner of Molded Underfill Flip-Chip Packages Under Thermal Load by New Criteria—Part I: Accurate Formulation of Singular Stress Fields Design of Highly Reliable 14T and 16T SRAM Cells Combined With Layout Harden Technique Front Cover
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