采用无金 Ti/Al/Ni/Ti 欧姆触点的高线性度 AlGaN/GaN HEMT，适用于 Ka 波段应用

IF 2.3 4区物理与天体物理 Q3 PHYSICS, APPLIED Applied Physics Express Pub Date : 2024-06-30 DOI:10.35848/1882-0786/ad5949

Che-Wei Hsu, Yueh-Chin Lin, Shao-Lun Lee, Kai-Wen Chen, Ying-Ciao Chen and Edward Yi Chang

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引用次数: 0

摘要

本研究制作了具有无金 Ti/Al/Ni/Ti 欧姆触点的 AlGaN/GaN HEMT。该器件的接触电阻 (Rc) 为 0.64 Ω-mm，并具有高线性度特性。28 GHz 的双音频测量显示，2 × 50 μm 器件在 VDS = 28 V 时的三阶截取点 (OIP3) 值为 41.64 dBm，OIP3/PDC 为 24.2。这些结果表明，带有 Ti/Al/Ni/Ti 欧姆触点的 AlGaN/GaN HEMT 在 Ka 波段应用中具有潜力。

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High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications

In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance (Rc) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 × 50 μm device exhibits an excellent third-order intercept point (OIP3) value of 41.64 dBm at VDS = 28 V, and an OIP3/PDC of 24.2. An OIP3 of 46.59 dBm was achieved when the device’s gate width was increased to 8 × 50 μm at VDS = 48 V. These results demonstrate that AlGaN/GaN HEMTs with Ti/Al/Ni/Ti ohmic contacts have potential for Ka-band applications.

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来源期刊

Applied Physics Express 物理-物理：应用

CiteScore

4.80

自引率

8.70%

发文量

310

审稿时长

1.2 months

期刊介绍： Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).