Aleksei G. Kozlov, Aleksandr V. Davydenko, Leonid L. Afremov, Ilia G. Iliushin, Vladimir N. Kharitonov, Pavel S. Mushtuk, Egor V. Tarasov, Aleksandr A. Turpak, Aleksandr F. Shishelov, Nikolay N. Chernousov, Mikhail E. Letushev, Alexandr V. Sadovnikov, Anna B. Khutieva, Alexey V. Ognev, Alexander S. Samardak
{"title":"通过外延钯/钴超薄薄膜的人工氧化实现界面纳米工程对垂直磁各向异性和 Dzyaloshinskii-Moriya 相互作用的影响","authors":"Aleksei G. Kozlov, Aleksandr V. Davydenko, Leonid L. Afremov, Ilia G. Iliushin, Vladimir N. Kharitonov, Pavel S. Mushtuk, Egor V. Tarasov, Aleksandr A. Turpak, Aleksandr F. Shishelov, Nikolay N. Chernousov, Mikhail E. Letushev, Alexandr V. Sadovnikov, Anna B. Khutieva, Alexey V. Ognev, Alexander S. Samardak","doi":"10.1021/acsaelm.4c00466","DOIUrl":null,"url":null,"abstract":"Transition metal oxides are promising for future electronics because of their unique magnetoionic properties and spin–charge interconversion. Here, epitaxial Pd/Co films with an artificially oxidized magnetic layer are studied. The effect of the oxidation dose of the Co layer on the structural and magnetic properties is investigated. The opportunity of epitaxial growth of Pd layers on top of the partially disordered oxide layer with preservation of the epitaxial ratio is shown. The calculations show that the process of oxide formation occurs according to the layer-by-island growth mechanism. An increase in the anisotropy field from the residual thickness of cobalt with an increase in the oxidation dose is observed. The enhancement of the Dzyaloshinskii–Moriya interaction at the interface between the ferromagnet and the oxide layer is experimentally confirmed by analyzing the velocity curves of the asymmetric displacement of domain walls in crossed magnetic fields in the creep mode and is supported by Brillouin light scattering spectroscopy. We demonstrate that the most significant contribution to the interfacial Dzyaloshinskii–Moriya interaction in Pd/Co/CoO films is made by the Co oxide layer. Our findings can be used to develop memory and logic devices of oxide spintronics having advantages of effective control of magnetization state, nonvolatility, low power consumption, and fast data processing.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of Interfacial Nanoengineering through an Artificial Oxidation of Epitaxial Pd/Co Ultrathin Films on Perpendicular Magnetic Anisotropy and the Dzyaloshinskii–Moriya Interaction\",\"authors\":\"Aleksei G. Kozlov, Aleksandr V. Davydenko, Leonid L. Afremov, Ilia G. Iliushin, Vladimir N. Kharitonov, Pavel S. Mushtuk, Egor V. Tarasov, Aleksandr A. Turpak, Aleksandr F. Shishelov, Nikolay N. Chernousov, Mikhail E. Letushev, Alexandr V. Sadovnikov, Anna B. Khutieva, Alexey V. 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The enhancement of the Dzyaloshinskii–Moriya interaction at the interface between the ferromagnet and the oxide layer is experimentally confirmed by analyzing the velocity curves of the asymmetric displacement of domain walls in crossed magnetic fields in the creep mode and is supported by Brillouin light scattering spectroscopy. We demonstrate that the most significant contribution to the interfacial Dzyaloshinskii–Moriya interaction in Pd/Co/CoO films is made by the Co oxide layer. 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引用次数: 0
摘要
过渡金属氧化物具有独特的磁性和自旋电荷相互转换特性,因此在未来的电子学领域大有可为。本文研究了具有人工氧化磁性层的钯/钴外延薄膜。研究了 Co 层的氧化剂量对结构和磁性能的影响。结果表明,在部分无序氧化层顶部外延生长钯层时,外延比率得以保持。计算结果表明,氧化物的形成过程是按照逐层岛屿生长机制进行的。随着氧化剂量的增加,钴的残余厚度所产生的各向异性场也随之增加。通过分析蠕变模式下交叉磁场中畴壁不对称位移的速度曲线,实验证实了铁磁体与氧化层之间界面上 Dzyaloshinskii-Moriya 相互作用的增强,布里渊光散射光谱也证实了这一点。我们证明,在 Pd/Co/CoO 薄膜中,对界面 Dzyaloshinskii-Moriya 相互作用贡献最大的是 Co 氧化层。我们的发现可用于开发氧化物自旋电子学的存储器和逻辑器件,这些器件具有有效控制磁化状态、不挥发性、低功耗和快速数据处理等优点。
Effects of Interfacial Nanoengineering through an Artificial Oxidation of Epitaxial Pd/Co Ultrathin Films on Perpendicular Magnetic Anisotropy and the Dzyaloshinskii–Moriya Interaction
Transition metal oxides are promising for future electronics because of their unique magnetoionic properties and spin–charge interconversion. Here, epitaxial Pd/Co films with an artificially oxidized magnetic layer are studied. The effect of the oxidation dose of the Co layer on the structural and magnetic properties is investigated. The opportunity of epitaxial growth of Pd layers on top of the partially disordered oxide layer with preservation of the epitaxial ratio is shown. The calculations show that the process of oxide formation occurs according to the layer-by-island growth mechanism. An increase in the anisotropy field from the residual thickness of cobalt with an increase in the oxidation dose is observed. The enhancement of the Dzyaloshinskii–Moriya interaction at the interface between the ferromagnet and the oxide layer is experimentally confirmed by analyzing the velocity curves of the asymmetric displacement of domain walls in crossed magnetic fields in the creep mode and is supported by Brillouin light scattering spectroscopy. We demonstrate that the most significant contribution to the interfacial Dzyaloshinskii–Moriya interaction in Pd/Co/CoO films is made by the Co oxide layer. Our findings can be used to develop memory and logic devices of oxide spintronics having advantages of effective control of magnetization state, nonvolatility, low power consumption, and fast data processing.