Trap engineering in bismuth activated NaLu(Gd)GeO4 persistent phosphors by doping Ln3+

Persistent phosphors, as a promising material for information storage and encryption, have garnered considerable attention owing to their rapid access and low-energy consumption. However, the lack of effective trap control in storage phosphors has resulted in limited storage capacity. In this study, we have prepared a series of NaLu(Gd)GeO:Bi,Ln (Ln = Eu, Tb, Dy, Pr, Sm, Er, Nd, Ho, Tm, and Yb) materials exhibiting tunable multimode and multicolor stimuli-responsive luminescence. The enhanced thermo-stimulated luminescence of five times is obtained in NaLuGeO:Bi,Eu relative to NaLuGeO:Bi, where Bi not only serves as the luminescent center but also as the hole trap center, and trace amounts of Eu act as electron traps to form stable electron-hole pair traps together with Bi hole traps. We propose a new method to improve trap density by constructing electron-hole pair traps via utilizing Bi and Ln as both trap makers and luminescence centers. Density functional theory calculations provide detailed information on the band structures of the matrix and electronic properties, which has confirmed the types of traps and then supports persistent luminescence mechanisms. Particularly, our phosphors are used as optical storage medium for multilevel optical data recording in a single physical layer through managing traps via setting the temperature. This study provides valuable insights for the design and fabrication of next-generation optical information storage and encryption materials.