Yuwei Xiong, Kuibo Yin, Weiwei Sun, Jingcang Li, Shangyang Shang, Lei Xin, Qiyun Wu, Xiaoran Gong, Yidong Xia, Litao Sun
{"title":"观察基于 Ag10Ge15Te75 的忆阻器在离子传输诱导下的失效机制","authors":"Yuwei Xiong, Kuibo Yin, Weiwei Sun, Jingcang Li, Shangyang Shang, Lei Xin, Qiyun Wu, Xiaoran Gong, Yidong Xia, Litao Sun","doi":"10.1007/s12274-024-6791-2","DOIUrl":null,"url":null,"abstract":"<p>The solid-electrolyte-based memristors have attracted tremendous attention for the next-generation nonvolatile memory for both logic and neuromorphic applications. However, they encounter variability performance challenges which originated from the random ionic transport and conductive filaments formation. Evidently, the electrochemical metallized mechanism associated with ion transport has been elucidated. Nonetheless, the failure mechanism caused by ion transport during cycles is rarely reported. Hereafter, the five stages of failure in the Ag/Ag<sub>10</sub>Ge<sub>15</sub>Te<sub>75</sub>/W memristor are elucidated through <i>ex-situ</i> current-voltage measurements combined with <i>in-situ</i> transmission electron microscopy characteristics. Our investigation reveals that the migration and enrichment of Ag ions result in the precipitation of Ag<sub>2</sub>Te. The formation of Ag<sub>2</sub>Te hinders the device’s ability to maintain its bipolar characteristics and also decreases the resistance value of the high resistance state, thereby reducing the device’s switching ratio. The promising results provide important guidance for the future design of structures and the manipulation of ion transport for high-performance memristors.\n</p>","PeriodicalId":713,"journal":{"name":"Nano Research","volume":null,"pages":null},"PeriodicalIF":9.5000,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Observation of the failure mechanism in Ag10Ge15Te75-based memristor induced by ion transport\",\"authors\":\"Yuwei Xiong, Kuibo Yin, Weiwei Sun, Jingcang Li, Shangyang Shang, Lei Xin, Qiyun Wu, Xiaoran Gong, Yidong Xia, Litao Sun\",\"doi\":\"10.1007/s12274-024-6791-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The solid-electrolyte-based memristors have attracted tremendous attention for the next-generation nonvolatile memory for both logic and neuromorphic applications. However, they encounter variability performance challenges which originated from the random ionic transport and conductive filaments formation. Evidently, the electrochemical metallized mechanism associated with ion transport has been elucidated. Nonetheless, the failure mechanism caused by ion transport during cycles is rarely reported. Hereafter, the five stages of failure in the Ag/Ag<sub>10</sub>Ge<sub>15</sub>Te<sub>75</sub>/W memristor are elucidated through <i>ex-situ</i> current-voltage measurements combined with <i>in-situ</i> transmission electron microscopy characteristics. Our investigation reveals that the migration and enrichment of Ag ions result in the precipitation of Ag<sub>2</sub>Te. The formation of Ag<sub>2</sub>Te hinders the device’s ability to maintain its bipolar characteristics and also decreases the resistance value of the high resistance state, thereby reducing the device’s switching ratio. The promising results provide important guidance for the future design of structures and the manipulation of ion transport for high-performance memristors.\\n</p>\",\"PeriodicalId\":713,\"journal\":{\"name\":\"Nano Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":9.5000,\"publicationDate\":\"2024-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano Research\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1007/s12274-024-6791-2\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1007/s12274-024-6791-2","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Observation of the failure mechanism in Ag10Ge15Te75-based memristor induced by ion transport
The solid-electrolyte-based memristors have attracted tremendous attention for the next-generation nonvolatile memory for both logic and neuromorphic applications. However, they encounter variability performance challenges which originated from the random ionic transport and conductive filaments formation. Evidently, the electrochemical metallized mechanism associated with ion transport has been elucidated. Nonetheless, the failure mechanism caused by ion transport during cycles is rarely reported. Hereafter, the five stages of failure in the Ag/Ag10Ge15Te75/W memristor are elucidated through ex-situ current-voltage measurements combined with in-situ transmission electron microscopy characteristics. Our investigation reveals that the migration and enrichment of Ag ions result in the precipitation of Ag2Te. The formation of Ag2Te hinders the device’s ability to maintain its bipolar characteristics and also decreases the resistance value of the high resistance state, thereby reducing the device’s switching ratio. The promising results provide important guidance for the future design of structures and the manipulation of ion transport for high-performance memristors.
期刊介绍:
Nano Research is a peer-reviewed, international and interdisciplinary research journal that focuses on all aspects of nanoscience and nanotechnology. It solicits submissions in various topical areas, from basic aspects of nanoscale materials to practical applications. The journal publishes articles on synthesis, characterization, and manipulation of nanomaterials; nanoscale physics, electrical transport, and quantum physics; scanning probe microscopy and spectroscopy; nanofluidics; nanosensors; nanoelectronics and molecular electronics; nano-optics, nano-optoelectronics, and nano-photonics; nanomagnetics; nanobiotechnology and nanomedicine; and nanoscale modeling and simulations. Nano Research offers readers a combination of authoritative and comprehensive Reviews, original cutting-edge research in Communication and Full Paper formats. The journal also prioritizes rapid review to ensure prompt publication.