{"title":"采用 PEDOT/PSS 孔传输层的氮化镓基蓝光 LED","authors":"Yuma Kato, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama","doi":"10.1002/pssa.202400090","DOIUrl":null,"url":null,"abstract":"In this study, a nitride‐based blue PEDOT‐LED is fabricated and a preliminary assessment of the device characteristics is done. To prevent detaching of the PEDOT/PSS layer from the LED substrate when immersing in water or developing solution, Ag was deposited on top of the PEDOT/PSS layer. Additionally, exfoliation is suppressed by reducing the developing time and protecting the wafer edge with a photoresist. Different etching methods for Ag and PEDOT/PSS are investigated. The Ar ion‐beam etching resulted in uniform and flat‐etched surfaces. Regarding the performance of the PEDOT‐LEDs, a high Mg‐doping concentration of 1.0 × 10<jats:sup>20</jats:sup> cm<jats:sup>−2</jats:sup> leads to a relatively low threshold current voltage in the V–I characteristics. However, for the PEDOT‐LED with <jats:italic>p</jats:italic>‐Al0.25Ga0.75 N EBL, a steep light output saturation is observed at high current density when analyzing the L–I characteristics.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaInN‐Based Blue LED with a PEDOT/PSS Hole Transport Layer\",\"authors\":\"Yuma Kato, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama\",\"doi\":\"10.1002/pssa.202400090\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, a nitride‐based blue PEDOT‐LED is fabricated and a preliminary assessment of the device characteristics is done. To prevent detaching of the PEDOT/PSS layer from the LED substrate when immersing in water or developing solution, Ag was deposited on top of the PEDOT/PSS layer. Additionally, exfoliation is suppressed by reducing the developing time and protecting the wafer edge with a photoresist. Different etching methods for Ag and PEDOT/PSS are investigated. The Ar ion‐beam etching resulted in uniform and flat‐etched surfaces. Regarding the performance of the PEDOT‐LEDs, a high Mg‐doping concentration of 1.0 × 10<jats:sup>20</jats:sup> cm<jats:sup>−2</jats:sup> leads to a relatively low threshold current voltage in the V–I characteristics. However, for the PEDOT‐LED with <jats:italic>p</jats:italic>‐Al0.25Ga0.75 N EBL, a steep light output saturation is observed at high current density when analyzing the L–I characteristics.\",\"PeriodicalId\":20074,\"journal\":{\"name\":\"Physica Status Solidi A-applications and Materials Science\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica Status Solidi A-applications and Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/pssa.202400090\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi A-applications and Materials Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/pssa.202400090","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
本研究制作了氮化物基蓝色 PEDOT-LED 并对器件特性进行了初步评估。为防止 PEDOT/PSS 层在浸入水或显影溶液时从 LED 基底上剥离,在 PEDOT/PSS 层顶部沉积了银。此外,还通过缩短显影时间和使用光致抗蚀剂保护晶片边缘来抑制剥离。研究了针对 Ag 和 PEDOT/PSS 的不同蚀刻方法。氩离子束蚀刻可获得均匀平整的蚀刻表面。关于 PEDOT-LED 的性能,1.0 × 1020 cm-2 的高镁掺杂浓度导致 V-I 特性的阈值电流电压相对较低。然而,对于采用 p-Al0.25Ga0.75 N EBL 的 PEDOT-LED 来说,在分析 L-I 特性时,会发现在高电流密度下会出现陡峭的光输出饱和。
GaInN‐Based Blue LED with a PEDOT/PSS Hole Transport Layer
In this study, a nitride‐based blue PEDOT‐LED is fabricated and a preliminary assessment of the device characteristics is done. To prevent detaching of the PEDOT/PSS layer from the LED substrate when immersing in water or developing solution, Ag was deposited on top of the PEDOT/PSS layer. Additionally, exfoliation is suppressed by reducing the developing time and protecting the wafer edge with a photoresist. Different etching methods for Ag and PEDOT/PSS are investigated. The Ar ion‐beam etching resulted in uniform and flat‐etched surfaces. Regarding the performance of the PEDOT‐LEDs, a high Mg‐doping concentration of 1.0 × 1020 cm−2 leads to a relatively low threshold current voltage in the V–I characteristics. However, for the PEDOT‐LED with p‐Al0.25Ga0.75 N EBL, a steep light output saturation is observed at high current density when analyzing the L–I characteristics.
期刊介绍:
The physica status solidi (pss) journal group is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Among the largest and most established international publications, the pss journals publish reviews, letters and original articles, as regular content as well as in special issues and topical sections.