分子量子蜂窝自动机中的单事件颠倒

IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Nanotechnology Pub Date : 2024-06-17 DOI:10.1109/TNANO.2024.3415396
Ehsan Rahimi
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引用次数: 0

摘要

分子量子蜂窝自动机(QCA)为分子电子学提供了一种范例,在这种范例中,分子还原-氧化中心的电荷配置编码二进制信息,而静电力能够在分子尺度上执行逻辑运算。宇宙射线或封装材料中的杂质会导致电荷隧穿进入 QCA 单元,从而引发单事件干扰(SEU)。我们利用哈伯德模型和全量子化学计算分析了 SUE 对由 QCA 单元(其中两个阳离子分子二聚体通过分子间库仑力相互作用)组成的多数栅功能的影响。为此,我们在分子 QCA 多路门的最小框架内引入了一个互补输入模型。利用互补输入模型以及哈伯德模型和量子化学计算,在正常和 SEU 运行模式下评估了单输入 QCA 单元的响应函数和三输入多数门的极化表。ab initio 结果表明了设计 SEU 容错 QCA 器件的可能性。
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Single-Event Upset in Molecular Quantum Cellular Automata
Molecular quantum cellular automata (QCA) provides a paradigm for molecular electronics in which the configuration of charges at reduction-oxidation centers of molecules encodes binary information, and the electrostatic forces enable performing logic operations at the molecular scale. Cosmic rays or impurities in packaging materials can cause electric charges to tunnel into a QCA cell, leading to single-event upset (SEU). The effect of SUE on the functionality of a majority gate comprised of a QCA cell, in which two cationic molecular dimers interact through intermolecular Coulomb forces, is analyzed using the Hubbard model and full quantum chemical calculations. For this purpose, we introduce a complementary input model within a minimal framework for the molecular QCA majority gate. The response function of a single-input QCA cell and the polarization table of a three-input majority gate are evaluated in normal and SEU operation modes using the complementary input model in conjunction with the Hubbard model and quantum chemical calculations. The ab initio results indicate the possibility of designing SEU fault-tolerant QCA devices.
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来源期刊
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.30%
发文量
74
审稿时长
8.3 months
期刊介绍: The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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