Syeda Wageeha Shakir, Muhammad Usman, Usman Habib, Shazma Ali and Laraib Mustafa
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High-Power and High-Efficiency 221 nm AlGaN Far Ultraviolet Laser Diodes
The optical features of far ultraviolet laser diodes (UV LDs) with peak wavelength emission of 221 nm have been numerically analyzed. Global research teams are developing aluminum gallium nitride (AlGaN)-based farUV LDs on Sapphire and AlN substrates as an alternative to Mercury lamps for air-water purification, polymer curing, and bio-medical devices. In this study, the light output power, internal quantum efficiency, stimulated recombination rate curve, and optical gain curve of the compositionally graded p-cladding layer (p-CL) were studied and show significant improvements. Therefore, the optimized structure can reduce the overflow of electrons and increase the injection of holes. This approach proves to be an efficient method for enhancing farUV LDs’ overall performance when compared to the reference structure.
期刊介绍：
The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices.
JSS has five topical interest areas:
carbon nanostructures and devices
dielectric science and materials
electronic materials and processing
electronic and photonic devices and systems
luminescence and display materials, devices and processing.
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