Pub Date : 2024-09-18DOI: 10.1149/2162-8777/ad78ff
Hyun Kyong Cho, Ina Ostermay, Tim Kolbe, Jens Rass and Sven Einfeldt
The feasibility of replacing the V/Al/Ni/Au contact on n-Al0.85Ga0.15N:Si commonly used in far-UVC LEDs with a Au-free V/Al/Pt contact has been investigated. It is shown that the V and Pt layer thicknesses play an important role for achieving a low contact resistivity and a smooth contact surface at a low annealing temperature. The specific contact resistivity of V(10 nm)/Al(120 nm)/Pt(40 nm) annealed at 700 °C for 5 min is comparable with that of V(15 nm)/Al(120 nm)/Ni(20 nm)/Au(30 nm) annealed at 850 °C for 30 s. Furthermore, the root mean square roughness of the optimized V/Al/Pt contacts was 8.3 nm as compared to 30 nm for V/Al/Ni/Au.
{"title":"Au-free V/Al/Pt Contacts on n-Al0.85Ga0.15N:Si Surfaces of Far-UVC LEDs","authors":"Hyun Kyong Cho, Ina Ostermay, Tim Kolbe, Jens Rass and Sven Einfeldt","doi":"10.1149/2162-8777/ad78ff","DOIUrl":"https://doi.org/10.1149/2162-8777/ad78ff","url":null,"abstract":"The feasibility of replacing the V/Al/Ni/Au contact on n-Al0.85Ga0.15N:Si commonly used in far-UVC LEDs with a Au-free V/Al/Pt contact has been investigated. It is shown that the V and Pt layer thicknesses play an important role for achieving a low contact resistivity and a smooth contact surface at a low annealing temperature. The specific contact resistivity of V(10 nm)/Al(120 nm)/Pt(40 nm) annealed at 700 °C for 5 min is comparable with that of V(15 nm)/Al(120 nm)/Ni(20 nm)/Au(30 nm) annealed at 850 °C for 30 s. Furthermore, the root mean square roughness of the optimized V/Al/Pt contacts was 8.3 nm as compared to 30 nm for V/Al/Ni/Au.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"4 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-17DOI: 10.1149/2162-8777/ad78fe
A. Atta, Nuha Al-Harbi, E. Abdeltwab, Reem Altuijri, M. M. Abdelhamied and M. A. M. Uosif
Herein, (PPy-Ag)/PET composites, consisting of silver nanoparticles (AgNPs) and polypyrrole (PPy) coated on PET, were fabricated by the polymerization process and then the films were characterized by SEM and XRD techniques. The addition of PPy-Ag on the dielectric properties of PET were determined. The XRD proved the successful synthesis of the (PPy-Ag)/PET samples. The SEM results demonstrate the effect of Ag modified the characteristics of the composite, which confirmed the interaction of (PPy-Ag)/PET. The dielectric properties of the films in frequency of 50 Hz to 5.6 MHz were measured. The density energy was enhanced from 9.1 × 10−5 for PET to 5480 × 10−5 J m−3 for (PPy-Ag)/PET. Moreover, the relaxation time decreased from 1.7 × 10−5 for PET to 2.8 × 109 sec for (PPy-Ag)/PET. The obtained data confirm the incorporation of PPy-Ag by PET. This research has led to the development of novel physico-chemical properties in flexible polymeric nanocomposite films, which could be used in high-performance energy storage devices.
本文通过聚合工艺制备了银纳米粒子（AgNPs）和聚吡咯（PPy）涂覆在 PET 上的（PPy-Ag）/PET 复合材料，然后利用 SEM 和 XRD 技术对薄膜进行了表征。测定了 PPy-Ag 的添加对 PET 介电性能的影响。XRD 证明了 (PPy-Ag)/PET 样品的成功合成。扫描电镜结果表明，Ag 改变了复合材料的特性，证实了 (PPy-Ag)/PET 的相互作用。测量了薄膜在 50 Hz 至 5.6 MHz 频率范围内的介电性能。密度能从 PET 的 9.1 × 10-5 提高到 (PPy-Ag)/PET 的 5480 × 10-5 J m-3。此外，弛豫时间从 PET 的 1.7 × 10-5 下降到 (PPy-Ag)/PET 的 2.8 × 109 秒。所获得的数据证实了 PET 与 PPy-Ag 的结合。这项研究开发出了具有新型物理化学特性的柔性聚合物纳米复合薄膜，可用于高性能储能设备。
{"title":"Structural Characteristics and Dielectric Properties of Deposited Silver Nanoparticles with Polypyrrole on PET Films for Dielectric Devices","authors":"A. Atta, Nuha Al-Harbi, E. Abdeltwab, Reem Altuijri, M. M. Abdelhamied and M. A. M. Uosif","doi":"10.1149/2162-8777/ad78fe","DOIUrl":"https://doi.org/10.1149/2162-8777/ad78fe","url":null,"abstract":"Herein, (PPy-Ag)/PET composites, consisting of silver nanoparticles (AgNPs) and polypyrrole (PPy) coated on PET, were fabricated by the polymerization process and then the films were characterized by SEM and XRD techniques. The addition of PPy-Ag on the dielectric properties of PET were determined. The XRD proved the successful synthesis of the (PPy-Ag)/PET samples. The SEM results demonstrate the effect of Ag modified the characteristics of the composite, which confirmed the interaction of (PPy-Ag)/PET. The dielectric properties of the films in frequency of 50 Hz to 5.6 MHz were measured. The density energy was enhanced from 9.1 × 10−5 for PET to 5480 × 10−5 J m−3 for (PPy-Ag)/PET. Moreover, the relaxation time decreased from 1.7 × 10−5 for PET to 2.8 × 109 sec for (PPy-Ag)/PET. The obtained data confirm the incorporation of PPy-Ag by PET. This research has led to the development of novel physico-chemical properties in flexible polymeric nanocomposite films, which could be used in high-performance energy storage devices.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"65 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-17DOI: 10.1149/2162-8777/ad7901
Jie Luo, Gangping Yan, Zhiyu Song, Yanyu Yang, Yunjiao Bao, Shangbo Yang, Chuqiao Niu, Guoliang Tian, Baodong Han, Hongbo Sun, Guilei Wang, Gaobo Xu, Huaxiang Yin, Chao Zhao and Jun Luo
The amorphous oxide semiconductor (AOS) thin film transistor (TFT) shows promise for use in advanced integrated circuits, such as 2T0C dynamic random-access memory, due to its excellent electronic performance and ability to be fabricated at low temperatures. Nevertheless, the high contact resistance between the metal and AOS restricts the applicability of AOS-TFT. This study demonstrates the achievement of a reduced contact resistance in InMoO (IMO) transistors by using a MoOx interlayer during fabrication. Increasing the oxygen concentration alters the band structure of MoOx and creates a graded Mo-MoOx-IMO structure with a pronounced quantum well at the interlayer between the metal and channel. Consequently, the quantum well’s ability to attract electrons and shape the band edge suppresses the Fermi-level pinning effect, ultimately leading to the establishment of an ohmic contact. The optimized MoOx interlayer showed a significant improvement in contact resistance (∼400%) through the adjustment of oxygen content during annealing procedures. This finding suggests that it is an attractive approach to provide excellent source/drain contacts in future ultra-scaled amorphous oxide semiconductor thin-films.
无定形氧化物半导体（AOS）薄膜晶体管（TFT）因其优异的电子性能和低温制造能力，有望应用于先进的集成电路，如 2T0C 动态随机存取存储器。然而，金属与 AOS 之间的高接触电阻限制了 AOS-TFT 的应用。本研究证明，在制造过程中使用氧化钼中间层可以降低 InMoO（IMO）晶体管的接触电阻。增加氧浓度会改变氧化钼的带状结构，并在金属和沟道之间的夹层形成具有明显量子阱的分级氧化钼-氧化钼-IMO 结构。因此，量子阱吸引电子和形成带边的能力抑制了费米级钉扎效应，最终导致欧姆接触的建立。通过在退火过程中调整氧含量，优化的氧化钼中间膜显示出接触电阻的显著改善（∼400%）。这一发现表明，在未来的超标量非晶氧化物半导体薄膜中，这是一种提供出色源极/漏极接触的极具吸引力的方法。
{"title":"Low Contact Resistance via Quantum Well Structure in Amorphous InMoO Thin Film Transistors","authors":"Jie Luo, Gangping Yan, Zhiyu Song, Yanyu Yang, Yunjiao Bao, Shangbo Yang, Chuqiao Niu, Guoliang Tian, Baodong Han, Hongbo Sun, Guilei Wang, Gaobo Xu, Huaxiang Yin, Chao Zhao and Jun Luo","doi":"10.1149/2162-8777/ad7901","DOIUrl":"https://doi.org/10.1149/2162-8777/ad7901","url":null,"abstract":"The amorphous oxide semiconductor (AOS) thin film transistor (TFT) shows promise for use in advanced integrated circuits, such as 2T0C dynamic random-access memory, due to its excellent electronic performance and ability to be fabricated at low temperatures. Nevertheless, the high contact resistance between the metal and AOS restricts the applicability of AOS-TFT. This study demonstrates the achievement of a reduced contact resistance in InMoO (IMO) transistors by using a MoOx interlayer during fabrication. Increasing the oxygen concentration alters the band structure of MoOx and creates a graded Mo-MoOx-IMO structure with a pronounced quantum well at the interlayer between the metal and channel. Consequently, the quantum well’s ability to attract electrons and shape the band edge suppresses the Fermi-level pinning effect, ultimately leading to the establishment of an ohmic contact. The optimized MoOx interlayer showed a significant improvement in contact resistance (∼400%) through the adjustment of oxygen content during annealing procedures. This finding suggests that it is an attractive approach to provide excellent source/drain contacts in future ultra-scaled amorphous oxide semiconductor thin-films.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"10 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-17DOI: 10.1149/2162-8777/ad7902
Asma Alkabsh
The PVA/PVP/TiO2 films were prepared using different TiO2 concentrations by solvent casting technique. An analysis was conducted to investigate the influence of TiO2 on the characteristics of PVA/PVP blends. The FTIR, UV/visible spectroscopy, and electrical bridge circuits were used to characterize the prepared nanocomposite films. The structural changes of the nanocomposite relative to pure PVA/PVP are indicated by FTIR spectra. The optical studies demonstrate that by increasing the TiO2 concentration inside PVA/PVP blends, the band gaps reduce from 5.40 eV for PVA/PVP to 4.20 eV for PVA/PVP/TiO2 (10 wt%), also the refractive indices the nanocomposites increase from 1.2020 for PVA/PVP blend into 2.5380 for PVA/PVP/TiO2 (10 wt%). Also, the transmittance decreased from 97.6% for PVA/PVP blend to approximately 55.4% at the largest concentration of TiO2. Additionally, studies were conducted on the parameters, as well, ac conductivity (σac). The outcomes of dielectric parameters of the prepared films are enhanced by the doping of TiO2 with different concentrations and dielectric relaxation is observed. The hopping mechanism of PVA/PVP/TiO2 films is supported by the ac conductivity. It is found that adding 10 wt% TiO2 inside PVA/PVP matrix at 5 MHz increases the conductivity of the pure PVA/PVP blend by 4.46 times. Highlights The impact of TiO2 nanoparticles on the PVA/PVP blend has been investigated. Optical and electrical properties have been significantly induced by TiO2 embedded on PVA/PVP. The optical parameters affirm that the TiO2 affect the optical response of PVA/PVP blend. The electrical parameters show amendments in AC electrical conductivity. The use of TiO2 in PVA/PVP is improving the optical and electrical properties of nanocomposites.
{"title":"Modification of Structural, Optical, and Electrical Properties of PVA/PVP Blend Filled by Nanostructured Titanium Dioxide for Optoelectronic Applications","authors":"Asma Alkabsh","doi":"10.1149/2162-8777/ad7902","DOIUrl":"https://doi.org/10.1149/2162-8777/ad7902","url":null,"abstract":"The PVA/PVP/TiO2 films were prepared using different TiO2 concentrations by solvent casting technique. An analysis was conducted to investigate the influence of TiO2 on the characteristics of PVA/PVP blends. The FTIR, UV/visible spectroscopy, and electrical bridge circuits were used to characterize the prepared nanocomposite films. The structural changes of the nanocomposite relative to pure PVA/PVP are indicated by FTIR spectra. The optical studies demonstrate that by increasing the TiO2 concentration inside PVA/PVP blends, the band gaps reduce from 5.40 eV for PVA/PVP to 4.20 eV for PVA/PVP/TiO2 (10 wt%), also the refractive indices the nanocomposites increase from 1.2020 for PVA/PVP blend into 2.5380 for PVA/PVP/TiO2 (10 wt%). Also, the transmittance decreased from 97.6% for PVA/PVP blend to approximately 55.4% at the largest concentration of TiO2. Additionally, studies were conducted on the parameters, as well, ac conductivity (σac). The outcomes of dielectric parameters of the prepared films are enhanced by the doping of TiO2 with different concentrations and dielectric relaxation is observed. The hopping mechanism of PVA/PVP/TiO2 films is supported by the ac conductivity. It is found that adding 10 wt% TiO2 inside PVA/PVP matrix at 5 MHz increases the conductivity of the pure PVA/PVP blend by 4.46 times. Highlights The impact of TiO2 nanoparticles on the PVA/PVP blend has been investigated. Optical and electrical properties have been significantly induced by TiO2 embedded on PVA/PVP. The optical parameters affirm that the TiO2 affect the optical response of PVA/PVP blend. The electrical parameters show amendments in AC electrical conductivity. The use of TiO2 in PVA/PVP is improving the optical and electrical properties of nanocomposites.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"15 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1149/2162-8777/ad7759
Vinay Kumar Mariswamy, Krishnaveni Sannathammegowda, Santosh Kumar and Ashish Kumar
This article investigates the impact of 100 MeV O7+ and 50 MeV Li3+ ions on Silicon Photodetectors, focusing on their electrical characteristics with similar Sn/Se ratios. Elevated ion fluences led to a significant rise in the ideality factor “n”, indicating the presence of Generation-Recombination (G-R) current due to introduced defects, especially those with deep energy levels in the forbidden gap acting as G-R centers. While Ideality factor (n) values decreased for oxygen ions at maximum fluence, they increased for lithium ions, reflecting consistent patterns in series resistance (Rs) and reverse leakage current (IR), attributed to ion-induced defects. Oxygen ions showed a monotonic variation in Rs, whereas lithium ions exhibited a slight reduction at maximum fluence, possibly due to defect annihilation. Despite differing Se values, 50 MeV Li3+ ions demonstrated improved device characteristics, suggesting potential defect annihilation. The ratio of Sn to Se indicated comparable damage contributions from nuclear and electronic energy. Additionally, TRIM computations revealed non-uniform damage distributions, with ions penetrating deep into the substrate, away from the n+/p junction.
{"title":"Comparative Analysis of 50 MeV Li3+ and 100 MeV O7+ Ion Beam Induced Electrical Modifications in Silicon Photodetectors","authors":"Vinay Kumar Mariswamy, Krishnaveni Sannathammegowda, Santosh Kumar and Ashish Kumar","doi":"10.1149/2162-8777/ad7759","DOIUrl":"https://doi.org/10.1149/2162-8777/ad7759","url":null,"abstract":"This article investigates the impact of 100 MeV O7+ and 50 MeV Li3+ ions on Silicon Photodetectors, focusing on their electrical characteristics with similar Sn/Se ratios. Elevated ion fluences led to a significant rise in the ideality factor “n”, indicating the presence of Generation-Recombination (G-R) current due to introduced defects, especially those with deep energy levels in the forbidden gap acting as G-R centers. While Ideality factor (n) values decreased for oxygen ions at maximum fluence, they increased for lithium ions, reflecting consistent patterns in series resistance (Rs) and reverse leakage current (IR), attributed to ion-induced defects. Oxygen ions showed a monotonic variation in Rs, whereas lithium ions exhibited a slight reduction at maximum fluence, possibly due to defect annihilation. Despite differing Se values, 50 MeV Li3+ ions demonstrated improved device characteristics, suggesting potential defect annihilation. The ratio of Sn to Se indicated comparable damage contributions from nuclear and electronic energy. Additionally, TRIM computations revealed non-uniform damage distributions, with ions penetrating deep into the substrate, away from the n+/p junction.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"4 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-15DOI: 10.1149/2162-8777/ad775b
Maryam Al Huwayz, Aljawhara H. Almuqrin, F. F. Alharbi, M. I. Sayyed and B. Albarzan
This work investigates the impact of BaO, PbO2, and Gd2O3 on newly developed borate glasses’ radiation shielding characteristics. The transmission factor (TF) of the glasses is almost zero at the low energy of 0.0395 MeV, which indicates favorable low-energy photon shielding. The maximum TF is reported at 1.46 MeV for the free Gd2O3 glass sample, ranging from 0.89 (0.5 cm thickness) to 0.73 (1.5 cm thickness). Moreover, with more BaO, PbO2, and Gd2O3 content added to the glasses, the TF decreases, indicating an enhancement in the efficiency of the glasses’ radiation protection with the introduction of BaO, PbO2, and Gd2O3. There is a 4.309 to 5.068 g cm−3 increase in the glasses’ density, and, as a result, the mean free path decreases, suggesting improved performance for radiation protection with the adding of more BaO, PbO2, and Gd2O3 contents to the glasses. At 0.122 MeV, the free Gd2O3 glass’s half value layer value is 0.098 cm, while the tenth value layer is 0.325 cm.
{"title":"Radiation Shielding Analysis of Multi-Component Glasses: Effects of Varying BaO, PbO2 and Gd2O3 Concentrations","authors":"Maryam Al Huwayz, Aljawhara H. Almuqrin, F. F. Alharbi, M. I. Sayyed and B. Albarzan","doi":"10.1149/2162-8777/ad775b","DOIUrl":"https://doi.org/10.1149/2162-8777/ad775b","url":null,"abstract":"This work investigates the impact of BaO, PbO2, and Gd2O3 on newly developed borate glasses’ radiation shielding characteristics. The transmission factor (TF) of the glasses is almost zero at the low energy of 0.0395 MeV, which indicates favorable low-energy photon shielding. The maximum TF is reported at 1.46 MeV for the free Gd2O3 glass sample, ranging from 0.89 (0.5 cm thickness) to 0.73 (1.5 cm thickness). Moreover, with more BaO, PbO2, and Gd2O3 content added to the glasses, the TF decreases, indicating an enhancement in the efficiency of the glasses’ radiation protection with the introduction of BaO, PbO2, and Gd2O3. There is a 4.309 to 5.068 g cm−3 increase in the glasses’ density, and, as a result, the mean free path decreases, suggesting improved performance for radiation protection with the adding of more BaO, PbO2, and Gd2O3 contents to the glasses. At 0.122 MeV, the free Gd2O3 glass’s half value layer value is 0.098 cm, while the tenth value layer is 0.325 cm.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"1 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-12DOI: 10.1149/2162-8777/ad775c
Sawsan Dacrory, Samir Kamel, Naglaa Nasralla and Gamal Turky
Hybrid and straightforward inorganic/organic composites that can be used simultaneously for energy storage are reported. Films from chitosan (Cs) with microcrystalline cellulose (MCC) implanted with reduced graphene oxide (rGO) and/or magnetic Fe3O4 nanoparticles were fabricated. The reinforcement of the Cs/MCC films with rGO and /or Fe3O4 was studied through Fourier transform infrared spectroscopy, X-ray diffraction, thermogravimetric analysis, and scanning electron microscopy with energy dispersive electron spectroscopy. In addition, their magnetic, conductivity, dielectric constant, and dielectric loss behaviors were studied. The magnetic investigations of the two films loaded with Fe3O4 have supper paramagnetic behavior. The saturation magnetization was decreased with the presence of rGO. At lower frequencies, the contribution of charge transport and interfacial polarization causes a sudden and nearly linear increase in permittivity with decreasing frequency. Unfortunately, no indication of electrode polarization was found, which reduces the ability of the prepared composition to store electrical energy. The electric modulus representation was employed to determine the relaxation time of the interfacial polarization quantitatively and numerically. No indication of electrode polarization was found.
{"title":"Chitosan/Microcrystalline Cellulose Overlaid rGO/Fe3O4 Films: Broadband Dielectric Spectroscopy Investigations","authors":"Sawsan Dacrory, Samir Kamel, Naglaa Nasralla and Gamal Turky","doi":"10.1149/2162-8777/ad775c","DOIUrl":"https://doi.org/10.1149/2162-8777/ad775c","url":null,"abstract":"Hybrid and straightforward inorganic/organic composites that can be used simultaneously for energy storage are reported. Films from chitosan (Cs) with microcrystalline cellulose (MCC) implanted with reduced graphene oxide (rGO) and/or magnetic Fe3O4 nanoparticles were fabricated. The reinforcement of the Cs/MCC films with rGO and /or Fe3O4 was studied through Fourier transform infrared spectroscopy, X-ray diffraction, thermogravimetric analysis, and scanning electron microscopy with energy dispersive electron spectroscopy. In addition, their magnetic, conductivity, dielectric constant, and dielectric loss behaviors were studied. The magnetic investigations of the two films loaded with Fe3O4 have supper paramagnetic behavior. The saturation magnetization was decreased with the presence of rGO. At lower frequencies, the contribution of charge transport and interfacial polarization causes a sudden and nearly linear increase in permittivity with decreasing frequency. Unfortunately, no indication of electrode polarization was found, which reduces the ability of the prepared composition to store electrical energy. The electric modulus representation was employed to determine the relaxation time of the interfacial polarization quantitatively and numerically. No indication of electrode polarization was found.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"116 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-12DOI: 10.1149/2162-8777/ad775a
Peter N. G. Ibrahim, Ahmed E. Hannora and Farid F. Hanna
Single phase La0.6Sr0.4MnO3 nanoparticles with perovskite structure ( symmetry) were successfully prepared by ball milling (mechanochemical synthesis) for 1 and 10 h followed by annealing treatment at temperature 900 or 1100 °C. It was found that, the lattice parameters increase with the increase of milling time or annealing temperature. The increase of the annealing temperature results in the increase of crystallite size and the particle size. The obtained samples were found to be ferromagnetic at room temperature. The sample obtained by one hour of milling and 900 °C annealing showed high value of saturation magnetization (about 56 emu g−1) and small value of coercivity (about 31 Oe) at room temperature, while the other samples show reduced value of magnetization and higher value of coercivity. The obtained magnetic results are discussed in light of the core/shell model of nanoparticles. The effect of the presence of oxygen vacancies on the lattice parameters and magnetic properties of the obtained samples is also discussed. Highlights Single phase perovskite La0.6Sr0.4MnO3 was obtained by mechanochemical synthesis. The influence of milling time and annealing temperature on the structural and magnetic properties was studied. The lattice parameters increase with the increase of milling time or annealing temperature The crystallite size and the particle size increase with the increase of annealing temperature. All samples showed ferromagnetic behavior at room temperature. Most of the samples show reduced value of magnetization. The magnetic results were discussed by the core/shell model of nanoparticles. The formation of oxygen vacancies can affect the magnetic results.
{"title":"Structural and Magnetic Properties of Nano Manganite La0.6Sr0.4MnO3 Obtained by Mechanochemical Synthesis Influenced by Preparation Conditions","authors":"Peter N. G. Ibrahim, Ahmed E. Hannora and Farid F. Hanna","doi":"10.1149/2162-8777/ad775a","DOIUrl":"https://doi.org/10.1149/2162-8777/ad775a","url":null,"abstract":"Single phase La0.6Sr0.4MnO3 nanoparticles with perovskite structure ( symmetry) were successfully prepared by ball milling (mechanochemical synthesis) for 1 and 10 h followed by annealing treatment at temperature 900 or 1100 °C. It was found that, the lattice parameters increase with the increase of milling time or annealing temperature. The increase of the annealing temperature results in the increase of crystallite size and the particle size. The obtained samples were found to be ferromagnetic at room temperature. The sample obtained by one hour of milling and 900 °C annealing showed high value of saturation magnetization (about 56 emu g−1) and small value of coercivity (about 31 Oe) at room temperature, while the other samples show reduced value of magnetization and higher value of coercivity. The obtained magnetic results are discussed in light of the core/shell model of nanoparticles. The effect of the presence of oxygen vacancies on the lattice parameters and magnetic properties of the obtained samples is also discussed. Highlights Single phase perovskite La0.6Sr0.4MnO3 was obtained by mechanochemical synthesis. The influence of milling time and annealing temperature on the structural and magnetic properties was studied. The lattice parameters increase with the increase of milling time or annealing temperature The crystallite size and the particle size increase with the increase of annealing temperature. All samples showed ferromagnetic behavior at room temperature. Most of the samples show reduced value of magnetization. The magnetic results were discussed by the core/shell model of nanoparticles. The formation of oxygen vacancies can affect the magnetic results.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"73 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-09DOI: 10.1149/2162-8777/ad71ef
Chunlong Sun, Wen Du, Wang Li, Bin Dong, Baogui Wang, Yanjun Lin, Wenwen Huang, Fangliang Xia and Jun Pan
Xanthene dyes are a type of fluorescent dye with a π conjugated system and a unique ring-opening mechanism. Fluorescent probes with xanthene dyes as fluorescent groups have the advantages of high molar extinction coefficient, high fluorescence quantum yield, good stability, and good water solubility, making them suitable for medical imaging and biological imaging diagnosis. Therefore, this article reviews the research progress of xanthene fluorescent probes in recent years in terms of pH value, reactive oxygen species, metal ions, anions, enzymes, thiol derivatives, etc, summarizes their design ideas, detection performance, and applications, and points out the development trend of xanthene fluorescent probes, providing a reference for the subsequent development and utilization of xanthene fluorescent probes.
{"title":"Review—Research Progress of Novel Fluorescent Probes with the Structure of Xanthene as Parent Nucleus","authors":"Chunlong Sun, Wen Du, Wang Li, Bin Dong, Baogui Wang, Yanjun Lin, Wenwen Huang, Fangliang Xia and Jun Pan","doi":"10.1149/2162-8777/ad71ef","DOIUrl":"https://doi.org/10.1149/2162-8777/ad71ef","url":null,"abstract":"Xanthene dyes are a type of fluorescent dye with a π conjugated system and a unique ring-opening mechanism. Fluorescent probes with xanthene dyes as fluorescent groups have the advantages of high molar extinction coefficient, high fluorescence quantum yield, good stability, and good water solubility, making them suitable for medical imaging and biological imaging diagnosis. Therefore, this article reviews the research progress of xanthene fluorescent probes in recent years in terms of pH value, reactive oxygen species, metal ions, anions, enzymes, thiol derivatives, etc, summarizes their design ideas, detection performance, and applications, and points out the development trend of xanthene fluorescent probes, providing a reference for the subsequent development and utilization of xanthene fluorescent probes.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"11 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-05DOI: 10.1149/2162-8777/ad7403
Victor-Tapio Rangel-Kuoppa, Dante Rodrigo Alfaro-Flores, Angel Guillen-Cervantes, Francisco de Moure-Flores, Miguel Ángel Meléndez-Lira
Si nanoparticles embedded in a ZnO matrix were produced by a sequential deposition of ZnO/Si/ZnO layers, by radio frequency sputtering. Sample growth temperatures of 25 °C, 300 °C, and 500 °C were used to deposit ZnO/Si/ZnO layers on soda lime glass and p-type silicon substrates; ZnO layers were deposited by reactive radio-frequency sputtering employing a mixture of Ar/O2, with a ratio of 66/33, as working atmosphere. The type of substrate and the growth temperature affect the first ZnO layer roughness, promoting the formation of silicon nanoparticles, matrix characteristics, and as consequence, spectral response. The roughness of the initial ZnO layer is transferred to the top layer of ZnO, and it can be tailored between 65 and 370 Å, depending on the sample growth temperature. Transmission electron microscopy show that substrate temperature mainly affects the density of silicon nanoparticles rather than their size. ZnO/Si/ZnO films deposited on p-type silicon substrate were processed and photosensors were obtained, showing a selective response in the 950 to 1150 nm wavelength range, making them suitable candidates for near infrared detectors.
通过射频溅射连续沉积氧化锌/二氧化硅/氧化锌层，产生了嵌入氧化锌基体的硅纳米粒子。样品生长温度分别为 25 ℃、300 ℃ 和 500 ℃，用于在钠钙玻璃和 p 型硅衬底上沉积 ZnO/Si/ZnO 层；采用反应射频溅射法沉积 ZnO 层，工作气氛为氩气/氧气混合物（比例为 66/33）。衬底类型和生长温度会影响第一层氧化锌层的粗糙度，促进硅纳米颗粒的形成，影响基质特性，进而影响光谱响应。初始氧化锌层的粗糙度会转移到氧化锌顶层，根据样品生长温度的不同，粗糙度可在 65 至 370 Å 之间定制。透射电子显微镜显示，衬底温度主要影响硅纳米颗粒的密度，而不是它们的尺寸。对沉积在 p 型硅衬底上的 ZnO/Si/ZnO 薄膜进行了处理，并获得了光传感器，在 950 至 1150 纳米波长范围内显示出选择性响应，使其成为近红外探测器的合适候选材料。
{"title":"Towards ZnO-Based Near-Infra-Red Radiation Detectors: Performance Improvement via Si Nanoclusters Embedment","authors":"Victor-Tapio Rangel-Kuoppa, Dante Rodrigo Alfaro-Flores, Angel Guillen-Cervantes, Francisco de Moure-Flores, Miguel Ángel Meléndez-Lira","doi":"10.1149/2162-8777/ad7403","DOIUrl":"https://doi.org/10.1149/2162-8777/ad7403","url":null,"abstract":"Si nanoparticles embedded in a ZnO matrix were produced by a sequential deposition of ZnO/Si/ZnO layers, by radio frequency sputtering. Sample growth temperatures of 25 °C, 300 °C, and 500 °C were used to deposit ZnO/Si/ZnO layers on soda lime glass and p-type silicon substrates; ZnO layers were deposited by reactive radio-frequency sputtering employing a mixture of Ar/O<sub>2,</sub> with a ratio of 66/33, as working atmosphere. The type of substrate and the growth temperature affect the first ZnO layer roughness, promoting the formation of silicon nanoparticles, matrix characteristics, and as consequence, spectral response. The roughness of the initial ZnO layer is transferred to the top layer of ZnO, and it can be tailored between 65 and 370 Å, depending on the sample growth temperature. Transmission electron microscopy show that substrate temperature mainly affects the density of silicon nanoparticles rather than their size. ZnO/Si/ZnO films deposited on p-type silicon substrate were processed and photosensors were obtained, showing a selective response in the 950 to 1150 nm wavelength range, making them suitable candidates for near infrared detectors.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"1 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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