以正光刻胶为掩蔽层的铬薄膜对 Borofloat 玻璃湿式批量微加工的研究

IF 4.7 Q2 NANOSCIENCE & NANOTECHNOLOGY Micro and Nano Systems Letters Pub Date : 2024-07-08 DOI:10.1186/s40486-024-00201-5
Vishal Sahu, Priyanka Dewangan, Robbi Vivek Vardhan, Vanlal Rinfela, P. Krishna Menon, Prem Pal
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引用次数: 0

摘要

体微加工通常用于在玻璃晶片上制造深腔、通孔和微通道等微结构,这些微结构在科学和技术领域有着广泛的应用。玻璃体微细加工的方法包括机械蚀刻、干蚀刻和湿蚀刻,其中湿蚀刻因其多方面的优点而被广泛使用。掩膜层在湿法蚀刻中发挥着重要作用。在本研究中,研究人员将铬薄膜与正性光刻胶(AZ1512HS)结合作为掩膜层,通过湿法刻蚀途径在 Borofloat 玻璃晶片上开发深腔。首先,在室温、200 ℃ 和 400 ℃ 下分别在三种不同的玻璃晶片上沉积直流磁控溅射铬薄膜,然后在其上旋涂光刻胶。光刻工艺用于图案化,然后对铬进行选择性蚀刻。之后,在 10% 的氢氟酸(HF)溶液中对玻璃晶片进行湿法蚀刻。这项工作表明,掩蔽层的持续性与铬薄膜的沉积温度有很大关系,而且持续性随着沉积温度的升高而增加。高温(400 °C)沉积的铬薄膜和光刻胶作为掩蔽层表现出卓越的可持续性,在 10%氢氟酸溶液中蚀刻时,蚀刻时间相对较长(380 分钟),蚀刻深度约为 245 µm,表面缺陷几乎可以忽略不计,玻璃晶片上的结构清晰可见。
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A study on chromium thin film with positive photoresist as a masking layer towards the wet bulk micromachining of Borofloat glass

Bulk micromachining is commonly used to fabricate microstructures such as deep cavities, through-holes, and microchannels in glass wafers, which have diverse applications in the areas of science and technology. The methods for glass bulk micromachining include mechanical, dry, and wet etching; among them, wet etching is widely used due to its multifaceted advantages. Masking layer plays an eminent role in wet etching. In the current study, Cr thin film combined with positive photoresist (AZ1512HS) is investigated as the masking layer to develop deep cavities in Borofloat glass wafers via wet etching route. Initially, DC magnetron sputtered Cr thin film is deposited at room temperature, 200 °C, and 400 °C, respectively, on three different glass wafers, followed by spin coating of photoresist on it. Photolithography process is used for patterning, and then selective etching of Cr is performed. Thereafter, wet etching of glass wafers is executed in 10% hydrofluoric acid (HF) solution. This work shows that the sustainability of the masking layer is highly dependent on the deposition temperature of Cr thin film, and the sustainability increases with the increase in the deposition temperature. The high temperature (400 °C) deposited Cr thin film along with photoresist exhibits superior sustainability as a masking layer, and it relatively provides a longer etch time of 380 min, excellent etch depth of  ~  245 µm with negligible surface defects and well-defined structures on glass wafer when etched in 10% HF solution.

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来源期刊
Micro and Nano Systems Letters
Micro and Nano Systems Letters Engineering-Biomedical Engineering
CiteScore
10.60
自引率
5.60%
发文量
16
审稿时长
13 weeks
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