D. S. Eliseev, A. V. Parafilo, V. M. Kovalev, O. V. Kibis, I. G. Savenko
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引用次数: 0
摘要
我们提出了库仑相互作用介导的二维非新月对称间隙狄拉克材料中山谷霍尔效应(VHE)的理论。我们假定,由于杂质造成的无序存在,系统中会出现裸谷霍尔电流,并由谷选择性各向异性倾斜散射决定。应用玻尔兹曼输运方程来描述材料中的电子和空穴输运,我们计算了电子-电子和电子-空穴散射过程引起的重归一化 VHE 电导率,并考虑了两种情况:(i) 存在退化电子气体的 n 掺杂单层;(ii) 具有电子和空穴气体玻尔兹曼统计量的本征半导体。在这两种情况下,粒子间散射的主要机制都是由于粒子位于不同的山谷中。此外,在第(ii)种情况下,除了直接散射外,随着温度的升高,电子-空穴湮灭也开始发挥作用。它甚至可能成为库仑相互作用介导的 VHE 的主要机制。
Renormalization of the valley Hall conductivity due to interparticle interaction
We develop a theory of a Coulomb interaction-mediated contribution to the valley Hall effect (VHE) in two-dimensional noncentrosymmetric gapped Dirac materials. We assume that the bare valley Hall current occurs in the system due to the presence of disorder caused by impurities and is determined by the valley-selective anisotropic skew scattering. Applying the Boltzmann transport equation to describe the electron and hole transport in the material, we calculate the renormalized VHE conductivity due to electron-electron and electron-hole scattering processes, considering two regimes: (i) an -doped monolayer hosting a degenerate electron gas, and (ii) an intrinsic semiconductor with the Boltzmann statistics of electron and hole gases. In both regimes, the dominant mechanism of interparticle scattering is due to particles residing in different valleys. Moreover, in case (ii), in addition to direct scattering, electron-hole annihilation starts to play a role with the increase in temperature. It might even become the dominant mechanism of the Coulomb interaction-mediated VHE.
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