I V Yanilkin, A I Gumarov, I A Rudnev, L R Fatikhova, A G Kiiamov, A E Denisov, S A Khokhorin, D A Tayurskii and R G Batulin
{"title":"采用磁控溅射共蒸发模式在带有 Al2O3/Y2O3/MgO/LaMnO3 缓冲层的 Hastelloy-C276 磁带上合成 MgB2 薄膜","authors":"I V Yanilkin, A I Gumarov, I A Rudnev, L R Fatikhova, A G Kiiamov, A E Denisov, S A Khokhorin, D A Tayurskii and R G Batulin","doi":"10.1088/1361-6668/ad5c09","DOIUrl":null,"url":null,"abstract":"This study presents the initial results of developing a technology for synthesizing a flexible superconducting magnesium diboride composite on a Hastelloy®-C276TM substrate coated with Al2O3/Y2O3/MgO/LaMnO3 buffer layers. The superconducting composite was deposited by magnetron sputtering from two Mg and B targets, followed by vacuum annealing at various substrate temperatures ranging from 400 °C to 700 °C. The superconducting transition temperature Tc ≈ 22 K, with a transition width ΔT ≈ 1 K, and critical current Jc ≈ 500 kA cm−2 (T= 5 K, H = 2 T) and Jc ≈ 11 kA cm−2 (T = 15 K, H = 2 T) at the optimal annealing temperature of 400 °C.","PeriodicalId":21985,"journal":{"name":"Superconductor Science and Technology","volume":"71 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis of MgB2 films on Hastelloy-C276 tape with Al2O3/Y2O3/MgO/LaMnO3 buffer layers by magnetron sputtering in co-evaporation mode\",\"authors\":\"I V Yanilkin, A I Gumarov, I A Rudnev, L R Fatikhova, A G Kiiamov, A E Denisov, S A Khokhorin, D A Tayurskii and R G Batulin\",\"doi\":\"10.1088/1361-6668/ad5c09\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study presents the initial results of developing a technology for synthesizing a flexible superconducting magnesium diboride composite on a Hastelloy®-C276TM substrate coated with Al2O3/Y2O3/MgO/LaMnO3 buffer layers. The superconducting composite was deposited by magnetron sputtering from two Mg and B targets, followed by vacuum annealing at various substrate temperatures ranging from 400 °C to 700 °C. The superconducting transition temperature Tc ≈ 22 K, with a transition width ΔT ≈ 1 K, and critical current Jc ≈ 500 kA cm−2 (T= 5 K, H = 2 T) and Jc ≈ 11 kA cm−2 (T = 15 K, H = 2 T) at the optimal annealing temperature of 400 °C.\",\"PeriodicalId\":21985,\"journal\":{\"name\":\"Superconductor Science and Technology\",\"volume\":\"71 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Superconductor Science and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6668/ad5c09\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Superconductor Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1361-6668/ad5c09","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Synthesis of MgB2 films on Hastelloy-C276 tape with Al2O3/Y2O3/MgO/LaMnO3 buffer layers by magnetron sputtering in co-evaporation mode
This study presents the initial results of developing a technology for synthesizing a flexible superconducting magnesium diboride composite on a Hastelloy®-C276TM substrate coated with Al2O3/Y2O3/MgO/LaMnO3 buffer layers. The superconducting composite was deposited by magnetron sputtering from two Mg and B targets, followed by vacuum annealing at various substrate temperatures ranging from 400 °C to 700 °C. The superconducting transition temperature Tc ≈ 22 K, with a transition width ΔT ≈ 1 K, and critical current Jc ≈ 500 kA cm−2 (T= 5 K, H = 2 T) and Jc ≈ 11 kA cm−2 (T = 15 K, H = 2 T) at the optimal annealing temperature of 400 °C.