具有卤代金属酸阴离子的查尔根蒽的辐射阳离子。第一部分:四甲氧基噻蒽

Karen-Christina Schipmann, Jörg Daniels, Johannes Beck
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[TMO-TA]<jats:sub>2</jats:sub>[Ta<jats:sub>2</jats:sub>OF<jats:sub>10</jats:sub>] (5) was obtained by anodic oxidation of TMO-TA in the presence of (Nbu<jats:sub>4</jats:sub>)<jats:sub>2</jats:sub>[Ta<jats:sub>2</jats:sub>OF<jats:sub>10</jats:sub>] as electrolyte. Using mercury(II) bromide, no redox reaction occurs. Instead, the colorless complex [HgBr<jats:sub>2</jats:sub>(TMO-TA)] (1) is formed. In the crystal structures of the compounds 2–7, the almost planar radical cations show different types of arrangements. Pair formation of the [TMO-TA]<jats:sup>•+</jats:sup> radicals to [TMO-TA]<jats:sub>2</jats:sub> <jats:sup>2+</jats:sup> dimers with the typical intra-pair S⋯S bonds of 3.1–3.2 Å lengths is predominant. Compounds 6 and 7 contain stacks of planar TMO-TA molecules in equidistant arrangement without pair formation and the unique feature of rotation of each adjacent cation by about 30°. 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引用次数: 0

摘要

以乙腈为溶剂,使用各种过渡金属卤化物,富电子分子四甲氧基噻蒽 TMO-TA 很容易被氧化成自由基阳离子。与 CuBr2、FeCl3、AuCl3、NbCl5 和 CuCl2 反应生成深蓝色或黑色晶体 [TMO-TA]2[CuBr4] (2)、[CH3CN (3)、[TMO-TA][AuCl4] (4)、[TMO-TA][NbCl6] - CH3CN (6) 和 [TMO-TA]5[Cu2Cl6]2 - 2 CH3CN (7)。[TMO-TA]2[Ta2OF10](5)是以 (Nbu4)2[Ta2OF10] 为电解质,通过阳极氧化 TMO-TA 而得到的。使用溴化汞(II)时,不会发生氧化还原反应。相反,形成了无色的复合物 [HgBr2(TMO-TA)] (1)。在化合物 2-7 的晶体结构中,几乎是平面的自由基阳离子呈现出不同的排列方式。[TMO-TA]-+自由基成对形成的[TMO-TA]2 2+ 二聚体具有典型的对内 S⋯S 键(长度为 3.1-3.2 Å),这种情况占主导地位。化合物 6 和 7 包含等距排列的平面 TMO-TA 分子堆栈,没有形成配对,而且每个相邻阳离子都旋转了约 30°。化合物 2、5 和 7 是带隙介于 0.62 和 1.4 eV 之间的电半导体,反映了自由基阳离子的排列。5 是二磁性的,而 2 和 7 的磁矩仅与预期的磁性稀释 Cu2+ 离子的顺磁矩一致。在所有化合物中,有机自由基上的电子都是强配对的。
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Radical cations of chalcogenanthrenes with halogenido metalate anions. Part I: tetramethoxythianthrene
The electron-rich molecule tetramethoxythianthrene TMO-TA can readily be oxidized to the radical cation using various transition metal halides in acetonitrile as solvent. Reactions with CuBr2, FeCl3, AuCl3, NbCl5, and CuCl2 yield dark blue or black crystals of [TMO-TA]2[CuBr4] (2), [TMO-TA][FeCl4] · CH3CN (3), [TMO-TA][AuCl4] (4), [TMO-TA][NbCl6] · CH3CN (6), and [TMO-TA]5[Cu2Cl6]2 · 2 CH3CN (7). [TMO-TA]2[Ta2OF10] (5) was obtained by anodic oxidation of TMO-TA in the presence of (Nbu4)2[Ta2OF10] as electrolyte. Using mercury(II) bromide, no redox reaction occurs. Instead, the colorless complex [HgBr2(TMO-TA)] (1) is formed. In the crystal structures of the compounds 2–7, the almost planar radical cations show different types of arrangements. Pair formation of the [TMO-TA]•+ radicals to [TMO-TA]2 2+ dimers with the typical intra-pair S⋯S bonds of 3.1–3.2 Å lengths is predominant. Compounds 6 and 7 contain stacks of planar TMO-TA molecules in equidistant arrangement without pair formation and the unique feature of rotation of each adjacent cation by about 30°. Compounds 2, 5, and 7 are electrical semiconductors with band gaps between 0.62 and 1.4 eV, reflecting the arrangement of the radical cations. While 5 is diamagnetic, the magnetic momenta of 2 and 7 correspond only to the expected paramagnetic momenta of magnetically dilute Cu2+ ions. Electrons on the organic radicals are strongly paired in all compounds.
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