Effect of AZO seed layers on the ultraviolet photoresponse of Ag/ZnO NRs Schottky junctions

Al-doped ZnO (AZO) thin films with different layers were prepared by sol-gel method. The SEM, XRD and AFM for three layers thin films demonstrates high crystal quality and low roughness. ZnO nanorods arrays (NRs) with different AZO seed layers were fabricated using hydrothermal process, and the effect of AZO seed layers on the structural, optical, and electrical characteristics was investigated. When there are three AZO seed layers present, ZnO NRs exhibit fewer surface states, smaller interface charge transfer resistance (R_ce = 6.1 × 10³Ωand R_ct = 6.6 × 10⁶Ω), longer carrier lifetimes (${\tau }_e$ = 4.0 ms), higher carrier concentration (N_D = 4.73 × 10¹⁹ cm⁻³), and narrower depletion region width W = 3.1 nm. Under weak UV light 381 nm (5.68 mW/cm²) at a bias −0.5 V, Ag/ZnO NRs Schottky devices with three AZO seed layers display a comparatively strong responsivity 34.64 mA/W. Appropriate AZO seed layers are favorable for highly efficient ZnO NRs-based photoelectric conversion devices.