为异构高端系统设计提供 130 GHz 及以上超宽带宽的箔片倒装芯片互连器件

IF 6.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE journal of microwaves Pub Date : 2024-06-13 DOI:10.1109/JMW.2024.3406919
TIM PFAHLER;ANDRE SCHEDER;ANNA BRIDIER;MATHIAS NAGEL;MARTIN VOSSIEK
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引用次数: 0

摘要

本文介绍了一种带宽超过 130 GHz 的超宽带、低损耗、柔性液晶聚合物基板对基板互连器件。通过保持从氧化铝基板到倒装芯片箔之间的参考阻抗和电磁场一致性,最大限度地减少了过渡不连续性。因此,可以实现超过 600 美元/平方米长的柔性倒装芯片互连,用于桥接毫米波子模块,实现超宽带异构系统设计,测量回波损耗超过 20 dB。此外,由于采用了柔性箔基板,该互连器件可在单片微波集成电路或不同基板高度的基板之间实现斜坡互连。通过紧密的信号对地连接,实现了过渡处的最小寄生辐射。此外,通过仿真和测量,还展示了所提出的互连器件在装配过程中对横向错位的鲁棒性。在超过 130 GHz 的带宽范围内,每个过渡的插入损耗均小于 0.3 dB。
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A Foil Flip-Chip Interconnect With an Ultra-Broadband Bandwidth of 130 GHz and Beyond for Heterogeneous High-End System Designs
This paper presents an ultra-broadband, low-loss, flexible liquid crystal polymer substrate-to-substrate interconnect with a bandwidth of more than 130 GHz. The transition discontinuity was minimized by maintaining both the reference impedance and the electromagnetic field conformity across the transition from alumina substrate to flip-chip foil. Therefore, more than 600 $\mu$ m long flexible flip-chip interconnects can be realized for bridging millimeter-wave sub-modules and enabling ultra-broadband heterogeneous system design with a measured return loss of above 20 dB. Furthermore, the interconnect can realize ramp interconnections between monolithic microwave integrated circuits or substrates with different substrate heights due to the flexible foil substrate. Minimum parasitic radiation at the transition is realized through a closely spaced signal-to-ground connection. Furthermore, the robustness of the proposed interconnect against lateral misalignment in the assembly is presented through simulation and measurement. An outstanding insertion loss of less than 0.3 dB per transition over a bandwidth of more than 130 GHz is shown.
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CiteScore
10.70
自引率
0.00%
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0
审稿时长
8 weeks
期刊最新文献
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