紫外线 LED 光提取增强器的结构设计

Nano Select Pub Date : 2024-07-12 DOI:10.1002/nano.202300179
Qixin Liu, An‐Chi Wei
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摘要

近来,紫外线-LED 因其在杀菌、去污等方面的优势而备受关注。由于紫外发光二极管的内部量子效率和光提取效率(LEE)较低,因此其外部量子效率仍不能令人满意。为了提高萃取效率,本研究提出了一种集成设计,包括基板厚度优化、基板成型、漫反射涂层、指数匹配层和锥底优化。除了通过光线跟踪进行光学建模外,还进行了热建模,以评估每个特征的光学和热性能。仿真结果表明,通过这些特征的组合,芯片的发光效率可从 18.5% 提高到 40% 以上,而通过漫反射涂层的设计,器件的平均温度可降低 2.2°C。
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Structure design for light‐extraction enhancement of UVC‐LED
UVC‐LEDs have drawn attention recently because of their benefits to sterilization, decontamination, etc. Since the internal quantum efficiency and light extraction efficiency (LEE) of UVC‐LEDs are low, their external quantum efficiency remains unsatisfied. To enhance the LEE, this study proposes an integration design with the features of substrate‐thickness optimization, substrate shaping, diffuse‐reflective coating, an index‐matching layer, and taper‐base optimization. In addition to optical modeling via ray tracing, thermal modeling is conducted to evaluate both the optical and thermal performances of each feature. The simulation results show that, by means of the combination of these features, the LEE of the chip can be raised from 18.5% to more than 40%, and the average temperature of the device can be lowered by 2.2°C via the design of the diffuse‐reflective coating.
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