具有全介电非晶锗金属表面的 Al0.3InAsSb pi-n 光电二极管的宽带量子效率提升

IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Photonics Research Pub Date : 2024-07-10 DOI:10.1002/adpr.202400090
Dongxia Wei, Bingtian Guo, Adam A. Dadey, J. Andrew McArthur, Junwu Bai, Seth R. Bank, Joe C. Campbell
{"title":"具有全介电非晶锗金属表面的 Al0.3InAsSb pi-n 光电二极管的宽带量子效率提升","authors":"Dongxia Wei,&nbsp;Bingtian Guo,&nbsp;Adam A. Dadey,&nbsp;J. Andrew McArthur,&nbsp;Junwu Bai,&nbsp;Seth R. Bank,&nbsp;Joe C. Campbell","doi":"10.1002/adpr.202400090","DOIUrl":null,"url":null,"abstract":"<p>Transparent amorphous germanium (a-Ge) has emerged as a promising material for engineering nanostructures and metasurfaces, offering significant potential for enhancing the performance of photonic devices in the short-wavelength infrared (SWIR) spectrum. Herein, the successful application of a-Ge metasurfaces with a truncated pyramid profile to enhance the external quantum efficiency (EQE) of a digital alloy Al<sub>0.3</sub>InAsSb p–i–n photodiode across a broad-wavelength range in the SWIR is presented. The experimental findings demonstrate a broadband enhancement in EQE. Two metasurface samples are designed to emphasize different-wavelength ranges. Notably, 51% improvement in EQE at 1550 nm and 125% enhancement at 2000 nm is achieved. Finite-difference time domain simulations show that the observed EQE improvement originates from the reduction of reflection and electromagnetic field enhancement. This study underscores the promising role of a-Ge metasurfaces in advancing the capabilities of SWIR photodetectors. It lays the groundwork for further exploration in optoelectronic device enhancements.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":null,"pages":null},"PeriodicalIF":3.7000,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400090","citationCount":"0","resultStr":"{\"title\":\"Broadband Quantum Efficiency Enhancement of Al0.3InAsSb p–i–n Photodiodes with All-Dielectric Amorphous Germanium Metasurfaces\",\"authors\":\"Dongxia Wei,&nbsp;Bingtian Guo,&nbsp;Adam A. Dadey,&nbsp;J. Andrew McArthur,&nbsp;Junwu Bai,&nbsp;Seth R. Bank,&nbsp;Joe C. Campbell\",\"doi\":\"10.1002/adpr.202400090\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Transparent amorphous germanium (a-Ge) has emerged as a promising material for engineering nanostructures and metasurfaces, offering significant potential for enhancing the performance of photonic devices in the short-wavelength infrared (SWIR) spectrum. Herein, the successful application of a-Ge metasurfaces with a truncated pyramid profile to enhance the external quantum efficiency (EQE) of a digital alloy Al<sub>0.3</sub>InAsSb p–i–n photodiode across a broad-wavelength range in the SWIR is presented. The experimental findings demonstrate a broadband enhancement in EQE. Two metasurface samples are designed to emphasize different-wavelength ranges. Notably, 51% improvement in EQE at 1550 nm and 125% enhancement at 2000 nm is achieved. Finite-difference time domain simulations show that the observed EQE improvement originates from the reduction of reflection and electromagnetic field enhancement. This study underscores the promising role of a-Ge metasurfaces in advancing the capabilities of SWIR photodetectors. It lays the groundwork for further exploration in optoelectronic device enhancements.</p>\",\"PeriodicalId\":7263,\"journal\":{\"name\":\"Advanced Photonics Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.7000,\"publicationDate\":\"2024-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400090\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Photonics Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/adpr.202400090\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Photonics Research","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/adpr.202400090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

透明非晶锗(a-Ge)已成为一种前景广阔的工程纳米结构和元表面材料,为提高短波红外(SWIR)光谱中光子器件的性能提供了巨大潜力。本文介绍了成功应用具有截断金字塔轮廓的 a-Ge 元表面来提高数字合金 Al0.3InAsSb pi-n 光电二极管在 SWIR 宽波长范围内的外部量子效率 (EQE)。实验结果表明 EQE 具有宽带增强效果。设计了两个元表面样品来强调不同的波长范围。值得注意的是,在 1550 nm 波长处,EQE 提高了 51%,在 2000 nm 波长处,EQE 提高了 125%。有限差分时域模拟表明,所观察到的 EQE 改善源于反射的减少和电磁场的增强。这项研究强调了 a-Ge 元表面在提高 SWIR 光电探测器性能方面的重要作用。它为进一步探索光电器件的增强奠定了基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

摘要图片

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Broadband Quantum Efficiency Enhancement of Al0.3InAsSb p–i–n Photodiodes with All-Dielectric Amorphous Germanium Metasurfaces

Transparent amorphous germanium (a-Ge) has emerged as a promising material for engineering nanostructures and metasurfaces, offering significant potential for enhancing the performance of photonic devices in the short-wavelength infrared (SWIR) spectrum. Herein, the successful application of a-Ge metasurfaces with a truncated pyramid profile to enhance the external quantum efficiency (EQE) of a digital alloy Al0.3InAsSb p–i–n photodiode across a broad-wavelength range in the SWIR is presented. The experimental findings demonstrate a broadband enhancement in EQE. Two metasurface samples are designed to emphasize different-wavelength ranges. Notably, 51% improvement in EQE at 1550 nm and 125% enhancement at 2000 nm is achieved. Finite-difference time domain simulations show that the observed EQE improvement originates from the reduction of reflection and electromagnetic field enhancement. This study underscores the promising role of a-Ge metasurfaces in advancing the capabilities of SWIR photodetectors. It lays the groundwork for further exploration in optoelectronic device enhancements.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
2.70%
发文量
0
期刊最新文献
Masthead Structural Colors Derived from the Combination of Core–Shell Particles with Cellulose Ultrafast Terahertz Superconductor Van der Waals Metamaterial Photonic Switch Masthead Progress on Coherent Perovskites Emitters: From Light-Emitting Diodes under High Current Density Operation to Laser Diodes
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1