伽马射线（低能量铯-0.660 MeV）辐照对不同温度下制备的碲化镉薄膜能隙的影响

International Journal of Advanced Multidisciplinary Research and Studies Pub Date : 2024-07-06 DOI:10.62225/2583049x.2024.4.4.3010

L. Al-Taan, Suha Abdullah Najim, Jangeez M Alabbas

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引用次数: 0

摘要

本研究采用喷雾热解法在不同的基底温度下制备了碲化镉薄膜，然后将其置于能量约为 0.66MeV 的伽马射线（铯源）下两小时。在上述温度下，研究了伽马射线对能隙值的影响。能隙值明显增加了约 (0.1 至 0.15) eV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Effect of Gamma-ray (Low Energy Cs-0.660 MeV) Irradiation on the Energy Gap of CdSe Thin Films Prepared at Different Temperatures

In this study, CdSe thin films were prepared by the Spray pyrolysis method at different substrate temperatures and then subjected to gamma rays from a (Cs-source) with an energy of about 0.66MeV for two hours. The impact of gamma rays on the energy gap values was examined at the temperatures mentioned above. There was a significant increase in the energy gap value by about (0.1 to 0.15)eV.

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International Journal of Advanced Multidisciplinary Research and Studies

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