用于 MIS 器件栅极电介质晶圆级测试的高场电子注入技术

Dmitrii V. Andreev, V. Andreev, Marina Konuhova, A. Popov
{"title":"用于 MIS 器件栅极电介质晶圆级测试的高场电子注入技术","authors":"Dmitrii V. Andreev, V. Andreev, Marina Konuhova, A. Popov","doi":"10.3390/technologies12070102","DOIUrl":null,"url":null,"abstract":"We propose a technique for the wafer-level testing of the gate dielectrics of metal–insulator–semiconductor (MIS) devices by the high-field injection of electrons into the dielectric using a mode of increasing injection current density up to a set level. This method provides the capability to control a change in the charge state of the gate dielectric during all the testing. The proposed technique makes it possible to assess the integrity of the thin dielectric and at the same time to control the charge effects of its degradation. The method in particular can be used for manufacturing processes to control integrated circuits (ICs) based on MIS structures. In the paper, we propose an advanced algorithm of the Bounded J-Ramp testing of the gate dielectric and receive its approval when monitoring the quality of the gate dielectrics of production-manufactured MIS devices. We found that the maximum value of positive charge obtained when tested by the proposed method was a value close to that obtained when the charge was injected into the dielectric under a constant current with a Bounded J value despite large differences in the rate of degradation of the dielectric.","PeriodicalId":504839,"journal":{"name":"Technologies","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Technique of High-Field Electron Injection for Wafer-Level Testing of Gate Dielectrics of MIS Devices\",\"authors\":\"Dmitrii V. Andreev, V. Andreev, Marina Konuhova, A. Popov\",\"doi\":\"10.3390/technologies12070102\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a technique for the wafer-level testing of the gate dielectrics of metal–insulator–semiconductor (MIS) devices by the high-field injection of electrons into the dielectric using a mode of increasing injection current density up to a set level. This method provides the capability to control a change in the charge state of the gate dielectric during all the testing. The proposed technique makes it possible to assess the integrity of the thin dielectric and at the same time to control the charge effects of its degradation. The method in particular can be used for manufacturing processes to control integrated circuits (ICs) based on MIS structures. In the paper, we propose an advanced algorithm of the Bounded J-Ramp testing of the gate dielectric and receive its approval when monitoring the quality of the gate dielectrics of production-manufactured MIS devices. We found that the maximum value of positive charge obtained when tested by the proposed method was a value close to that obtained when the charge was injected into the dielectric under a constant current with a Bounded J value despite large differences in the rate of degradation of the dielectric.\",\"PeriodicalId\":504839,\"journal\":{\"name\":\"Technologies\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3390/technologies12070102\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/technologies12070102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

我们提出了一种对金属-绝缘体-半导体(MIS)器件的栅极电介质进行晶圆级测试的技术,方法是通过向电介质中注入高场电子的方式,将注入电流密度提高到设定水平。这种方法能够在所有测试过程中控制栅极电介质电荷状态的变化。所提出的技术可以评估薄介质的完整性,同时控制其降解的电荷效应。该方法尤其可用于制造工艺,以控制基于 MIS 结构的集成电路 (IC)。在本文中,我们提出了一种先进的栅极电介质 Bounded J-Ramp 测试算法,并在监控生产制造的 MIS 器件的栅极电介质质量时得到了认可。我们发现,尽管电介质的劣化率存在很大差异,但采用所提出的方法进行测试时获得的正电荷最大值与在恒定电流下以有界 J 值向电介质注入电荷时获得的正电荷最大值相近。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Technique of High-Field Electron Injection for Wafer-Level Testing of Gate Dielectrics of MIS Devices
We propose a technique for the wafer-level testing of the gate dielectrics of metal–insulator–semiconductor (MIS) devices by the high-field injection of electrons into the dielectric using a mode of increasing injection current density up to a set level. This method provides the capability to control a change in the charge state of the gate dielectric during all the testing. The proposed technique makes it possible to assess the integrity of the thin dielectric and at the same time to control the charge effects of its degradation. The method in particular can be used for manufacturing processes to control integrated circuits (ICs) based on MIS structures. In the paper, we propose an advanced algorithm of the Bounded J-Ramp testing of the gate dielectric and receive its approval when monitoring the quality of the gate dielectrics of production-manufactured MIS devices. We found that the maximum value of positive charge obtained when tested by the proposed method was a value close to that obtained when the charge was injected into the dielectric under a constant current with a Bounded J value despite large differences in the rate of degradation of the dielectric.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Oxygen Measurement in Cuprate Superconductors Using the Dissolved Oxygen/Chlorine Method Development and Evaluation of an mHealth App That Promotes Access to 3D Printable Assistive Devices Probabilistic Confusion Matrix: A Novel Method for Machine Learning Algorithm Generalized Performance Analysis Improvement of the ANN-Based Prediction Technology for Extremely Small Biomedical Data Analysis Optimizing Speech Emotion Recognition with Machine Learning Based Advanced Audio Cue Analysis
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1