Analyzing the Performance of a Low Power, High Performance Latch-Based Static Random-Access Memory Sense Amplifier for Epilepsy Detection

Epilepsy is a neurological disorder characterized by unpredictable seizures, making early detection crucial for effective management and treatment. Traditional detection methods often rely on bulky and power-hungry equipment, limiting their practicality for continuous monitoring. As such, there is a growing demand for lowpower, high-performance sensing technologies to enable wearable or implantable epilepsy detection devices. In this context, the development of a latch-based SRAM sense amplifier presents a promising avenue for achieving both sensitivity and power efficiency in seizure detection systems. The proposed latch-based SRAM sense amplifier architecture is meticulously designed to meet the specific requirements of epilepsy detection applications. Leveraging advanced semiconductor technologies and circuit design techniques, we optimize the sense amplifier’s performance parameters, including sensitivity, speed, and power consumption. Through extensive simulations using industry-standard tools, we evaluate the sense amplifier’s performance under varying conditions, such as input signal amplitude, frequency, and power supply voltage. Additionally, we compare the proposed architecture with existing solutions to assess its superiority in terms of both performance and energy efficiency. Our analysis reveals that the developed latch-based SRAM sense amplifier exhibits superior sensitivity to subtle signals associated with epileptic activity while consuming significantly less power compared to conventional designs. The sense amplifier demonstrates rapid response times, enabling real-time detection and timely intervention in seizure events. By combining sensitivity, speed, and energy efficiency, the proposed architecture offers a compelling solution to the challenges associated with continuous monitoring of epileptic seizures.