C 波段碳化硅铌酸锂声表面波谐振器,6.5 千兆赫时的功率因数为 124

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Microelectromechanical Systems Pub Date : 2024-07-15 DOI:10.1109/JMEMS.2024.3423768
Tzu-Hsuan Hsu;Joshua Campbell;Jack Kramer;Sinwoo Cho;Ming-Huang Li;Ruochen Lu
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引用次数: 0

摘要

在这项工作中,我们基于碳化硅(SiC)平台上的薄膜铌酸锂(LN),展示了一种具有 22% 的高机电耦合(${k}_{mathbf {t}}^{\mathbf {2}}$ )和 565 的品质因数(Q)的 C 波段剪切-水平表面声波(SH-SAW)谐振器、在 6.5 GHz 频率下,其优越性能系数(FoM $= {k}_{\mathbf {t}}^{\mathbf {2}}\cdot Q_{max}$ )为 124。5 GHz,是该频率范围内报告的最高 FoM。谐振器频率的提升是通过减少波长($\lambda $)和使用薄铝(Al)电极实现的。LN/SiC波导和同步谐振器的设计共同实现了有效的声能约束,即使当LN的归一化厚度接近0.5到1美元时,也能达到很高的FoM。 为了进行全面的研究,我们还设计并制造了五个额外的谐振器,在相同的500纳米厚的SiC上转移Y形切割薄膜LN中,将研究范围从480纳米扩大到800纳米。制造的 SH-SAW 谐振器工作频率为 5 至 8 GHz,实验证明其 ${k}_{\mathbf {t}}^{\mathbf {2}}$ 从 20.3% 到 22.9%,Q 值从 350 到 575,从而以出色的性能覆盖了整个 C 波段。[2024-0070]
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C-Band Lithium Niobate on Silicon Carbide SAW Resonator With Figure-of-Merit of 124 at 6.5 GHz
In this work, we demonstrate a C-band shear-horizontal surface acoustic wave (SH-SAW) resonator with high electromechanical coupling ( ${k}_{\mathbf {t}}^{\mathbf {2}}$ ) of 22% and a quality factor (Q) of 565 based on a thin-film lithium niobate (LN) on silicon carbide (SiC) platform, featuring an excellent figure-of-merit (FoM $= {k}_{\mathbf {t}}^{\mathbf {2}}\cdot Q_{max}$ ) of 124 at 6.5 GHz, the highest FoM reported in this frequency range. The resonator frequency upscaling is achieved through wavelength ( $\lambda $ ) reduction and the use of thin aluminum (Al) electrodes. The LN/SiC waveguide and synchronous resonator design collectively enable effective acoustic energy confinement for a high FoM, even when the normalized thickness of LN approaches a scale of $0.5\lambda $ to $1\lambda $ . To perform a comprehensive study, we also designed and fabricated five additional resonators, expanding the $\lambda $ studied ranging from 480 to 800 nm, in the same 500 nm-thick transferred Y-cut thin-film LN on SiC. The fabricated SH-SAW resonators, operating from 5 to 8 GHz, experimentally demonstrate a ${k}_{\mathbf {t}}^{\mathbf {2}}$ from 20.3% to 22.9% and a Q from 350 to 575, thereby covering the entire C-band with excellent performance. [2024-0070]
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来源期刊
Journal of Microelectromechanical Systems
Journal of Microelectromechanical Systems 工程技术-工程:电子与电气
CiteScore
6.20
自引率
7.40%
发文量
115
审稿时长
7.5 months
期刊介绍: The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.
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